Tags: nanoelectronics

Description

This list is a starting point for nanoHUB users interested in the broad area of nanoelectronics. It is a comprehensive list of available resources. More information on Nanoelectronics can be found here.

All Categories (41-60 of 2301)

  1. Fundamentals of Current Flow

    30 Jan 2022 | | Contributor(s):: Supriyo Datta

    Everyone is familiar with the amazing performance of a modern smartphone, powered by a billion-plus nanotransistors, each having an active region that is barely a few hundred atoms long. The same amazing technology has also led to a deeper understanding of the nature of current flow and heat...

  2. Introduction to Quantum Transport

    30 Jan 2022 | | Contributor(s):: Supriyo Datta

    Everyone is familiar with the amazing performance of a modern smartphone, powered by a billion-plus nanotransistors, each having an active region that is barely a few hundred atoms long. The same amazing technology has also led to a deeper understanding of the nature of current flow and heat...

  3. ABACUS Bipolar Junction Transistors (Winter 2021)

    25 Jan 2022 | | Contributor(s):: Gerhard Klimeck

    In the fifth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Bipolar-Junction-Transistor-Lab. Students can experiment with npn and pnp BJTs in ideal textbook 1D geometries as well as realistic 2D geometries. Different experiments with variations in doping profiles,...

  4. ABACUS Drift-Diffusion-Lab with Bias and Light (Winter 2021)

    19 Jan 2022 | | Contributor(s):: Gerhard Klimeck

    In the fourth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the Drift-Diffusion-Lab. Students can experiment with a semiconductor slab under bias and/or light illumination...

  5. Monte Carlo Electron Dynamics

    21 Aug 2008 | | Contributor(s):: Shaikh S. Ahmed, Zichang Zhang, Khadija Abul Khair, Sharnali Islam, Mohammad Zunaidur Rashid

    Simulates non-stationary electron transport in emerging semiconductors using Monte Carlo approach. Models how particle distribution function evolves in time and allows the user to extract velocity-field and mobility characteristics.

  6. ABACUS Bandstructure Models (Winter 2021)

    08 Dec 2021 | | Contributor(s):: Gerhard Klimeck

    In the third session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate several bandstructure tools. With these, students can explore the Standard Periodic Potential aka Kronig-Penney model as well as bandstructure formation by transmission through finite barriers...

  7. ABACUS PN Junctions (Winter 2021)

    08 Dec 2021 | | Contributor(s):: Gerhard Klimeck

    In this session, Dr. Gerhard Klimeck will give a brief overview of ABACUS and demonstrate the PN Junction Lab. With the PN Junction Lab, students can explore band edge diagrams and charge distributions as a function of bias...

  8. ABACUS Overview and Crystal Structures (Winter 2021)

    08 Dec 2021 | | Contributor(s):: Gerhard Klimeck

    In the first session, Dr. Klimeck will briefly overview ABACUS and demonstrate the crystal viewer tool. With crystal viewer, students can start with the visualization of a standard Silicon textbook unit cell, then expand the view to a larger crystal and immerse themselves into the various...

  9. Recitation Series for Semiconductor Education

    08 Dec 2021 | | Contributor(s):: Gerhard Klimeck

    The objective of this recitation series is to enable faculty to enhance existing or new semiconductor classes with interactive simulations. Simulations and animations can immerse students into “what if” scenarios and engage them in more active forms of learning, including...

  10. KUSHIK KUMAR SAHA

    https://nanohub.org/members/344453

  11. Purdue Microelectronics and Nanotechnology Overview

    07 Sep 2021 | | Contributor(s):: Samantha Nelson, Muhammad A. Alam, Joerg Appenzeller, Zhihong Chen, Supriyo Datta, David Janes, Gerhard Klimeck, Dana Weinstein, Pramey Upadhyaya, Peide "Peter" Ye

    In today’s modern world, microelectronics has touched every aspect of our lives. None of us can imagine or live in a world without personal computers, smart phones, and probably very soon autonomous cars. To continue its expansion and go beyond the traditional semiconductor technologies,...

  12. What's the mobility?

    08 Sep 2021 | | Contributor(s):: Eric Pop

    This is a very simple Excel spreadsheet which can be used for quick-and-dirty effective mobility estimates from published current vs. voltage (I-V) transistor data in the linear regime. The user simply needs to read the drain current, threshold voltage, gate-to-source and drain-to-source...

  13. Vema Reddy Bheeram

    Dr. Vema Reddy Bheeram earned his BS degree from Osmania University in 2011 and MS degree in Analytical Chemistry from GITAM University in 2015. He completed his PhD study on Influence of gamma...

    https://nanohub.org/members/337514

  14. GaN transistors - TTF

    Q&A|Closed | Responses: 2

    Hello ,

     

     First of all , i would like to thank you for this valuable presantaion .

     

    i am doing a phd thisis that focus on GaN transistors...

    https://nanohub.org/answers/question/2497

  15. IWCN 2021: Effective Monte Carlo Simulator of Hole Transport in SiGe alloys

    25 Jul 2021 | | Contributor(s):: Caroline dos Santos Soares, Alan Rossetto, Dragica Vasileska, Gilson Wirth

    In this work, an Ensemble Monte Carlo (EMC) transport simulator is presented for simulation of hole transport in SiGe alloys.

  16. IWCN 2021: How to Preserve the Kramers-Kronig Relation in Inelastic Atomistic Quantum Transport Calculations

    15 Jul 2021 | | Contributor(s):: Daniel Alberto Lemus, James Charles, Tillmann Christoph Kubis

    The nonequilibrium Green’s function method (NEGF) is often used to predict quantum transport in atomically resolved nanodevices. This yields a high numerical load when inelastic scattering is included. Atomistic NEGF had been regularly applied on nanodevices, such as nanotransistors....

  17. IWCN 2021: Interfacial Trap Effects in InAs Gate-all-around Nanowire Tunnel Field- Effect Transistors: First-Principles-Based Approach

    15 Jul 2021 | | Contributor(s):: Hyeongu Lee, SeongHyeok Jeon, Cho Yucheol, Mincheol Shin

    In this work, we investigated the effects of the traps, Arsenic dangling bond (AsDB) and Arsenic anti-site (AsIn) traps, in InAs gate-all-around nanowire TFETs, using the trap Hamiltonian obtained from the first-principles calculations. The transport properties were treated by nonequilibrium...

  18. IWCN 2021: Quantum Transport Simulation on 2D Ferroelectric Tunnel Junctions

    15 Jul 2021 | | Contributor(s):: Eunyeong Yang, Jiwon Chang

    In this work, we consider a simple asymmetric structure of metal-ferroelectric-metal (MFM) FTJs with two different ferroelectric materials, Hf0.5Zr0.5O2(HZO) and CuInP2S6(CIPS), respectively. To investigate the performance of FTJs theoretically, we first explore complex band structures of HZO...

  19. IWCN 2021: Simulation of Ballistic Spin-MOSFET Devices with Ferromagnetic Channels

    15 Jul 2021 | | Contributor(s):: Patrizio Graziosi, Neophytos Neophytou

    In this work, using the semiclassical top-of-the-barrier FET model, and a spin dependent contact resistance model derived from, we explore the operation of a spin-MOSFET that utilizes such ferromagnetic semiconductors as channel materials, in addition to ferromagnetic source/drain contacts.

  20. IWCN 2021: Electronic States in 4H-SiC MOS Inversion Layers Considering Crystal Structure Using Empirical Pseudopotential Method

    15 Jul 2021 | | Contributor(s):: Sachika Nagamizo, Hajime Tanaka, Nobuya Mori

    In this study, to analyze the electronic states in 4H-SiC MOS inversion layers taking account of this feature, we described the crystal structure of 4H-SiC including the internal channel space using the empirical pseudopotential method, and we calculated the electronic states in the triangular...