Tags: nanoelectronics

Description

Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

All Categories (101-120 of 2007)

  1. Unified View of Electron and Phonon Transport

    10 Nov 2015 | Online Presentations | Contributor(s): Mark Lundstrom, Jesse Maassen

    A simple, unified view of electron and phonon transport is presented. Similarities and differences are identified, and new insights that come from addressing phonon transport from an electron...

    http://nanohub.org/resources/23072

  2. Analyzing Variability in Short-Channel Quantum Transport from Atomistic First Principles

    05 Nov 2015 | Online Presentations | Contributor(s): Qing Shi

    IWCE 2015 invited presentation.  Due to random impurity fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this talk I shall present a...

    http://nanohub.org/resources/22990

  3. Computational Methods for the Design of Bioinspired Systems that Employ Nanodevices

    05 Nov 2015 | Online Presentations | Contributor(s): Damien Querlioz, Adrien F. Vincent

    IWCE 2015 session keynote presentation. Biological systems compute by exploiting the rich physics of their natural “nanodevices”. In electronics, it is therefore attractive to design...

    http://nanohub.org/resources/22988

  4. A Multi-Scale Modeling Approach to Study Transport in Silicon Heterojunction Solar Cells

    03 Nov 2015 | Online Presentations | Contributor(s): Pradyumna Muralidharan, Dragica Vasileska, Stephen M. Goodnick, Stuart Bowden

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

    http://nanohub.org/resources/22993

  5. Multi-Scale Modeling of Metal-CNT Interfaces

    03 Nov 2015 | Online Presentations | Contributor(s): Martin Claus

    IWCE 2015 presentation.  the authors studied the impact of contact materials on cntfet behavior using multiscale modeling and simulation framework. a strong correlation between metal-cnt...

    http://nanohub.org/resources/22992

  6. From Single-Stage to Device-Level Simulation of Coupled Electron and Phonon Transport in Quantum Cascade Lasers

    02 Nov 2015 | Online Presentations | Contributor(s): Irena Knezevic

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

    http://nanohub.org/resources/22991

  7. Multi-Scale Quantum Simulations of Conductive Bridging RAM

    02 Nov 2015 | Online Presentations | Contributor(s): Michael Povolotskyi, nicolas onofrio, David M Guzman, Alejandro Strachan, Gerhard Klimeck

    IWCE 2015 presentation.

    http://nanohub.org/resources/23027

  8. Green Light on Germanium

    02 Nov 2015 | Online Presentations | Contributor(s): peide ye

    This talk will review recent progress as well as challenges on Ge research for future logic applications with emphasis on the breakthrough work at Purdue University on Ge nFET which leads to the...

    http://nanohub.org/resources/23033

  9. Inter-band Tunnel Transistors: Opportunities and Challenges

    30 Oct 2015 | Online Presentations | Contributor(s): Suman Datta

    In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.

    http://nanohub.org/resources/23000

  10. Negative Capacitance Ferroelectric Transistors: A Promising Steep Slope Device Candidate?

    30 Oct 2015 | Online Presentations | Contributor(s): Suman Datta

    In this talk, we will review progress in non-perovskite ALD based ferroelectric dielectrics which have strong implication for VLSI compatible negative capacitance Ferroelectric FETs.

    http://nanohub.org/resources/23011

  11. Lorentzian fitting tool for phonon spectral energy density and general use

    26 Oct 2015 | Tools | Contributor(s): Tianli Feng, Xiulin Ruan

    Fit a general data set (or specially the phonon spectral energy density) as a Lorentzian function to obtain the peak position (or phonon frequency) and full width at half maximum (or relaxation time).

    http://nanohub.org/resources/lorentzfit

  12. Dissipative Quantum Transport Using One-Particle Time-Dependent (Conditional) Wave Functions

    19 Oct 2015 | Online Presentations | Contributor(s): Xavier Oriols

    IWCE 2015 presentation. an effective single-particle schrodinger equation to include dissipation into quantum devices is presented. this effective equation is fully understood in the context...

    http://nanohub.org/resources/22958

  13. Nisha Mariam Johnson

    http://nanohub.org/members/131528

  14. Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films

    15 Oct 2015 | Online Presentations | Contributor(s): Joydeep Ghosh, Dmitri Osintsev, Viktor Sverdlov, S. Selberherr

    IWCE 2015 presentation.  the electron spin properties are promising for future spin-driven devices. in contrast to charge, spin is not a conserved quantity, and having sufficiently long spin...

    http://nanohub.org/resources/22878

  15. NEMO5: Why must we treat topological insulator nanowires atomically?

    15 Oct 2015 | Online Presentations | Contributor(s): Fan Chen, Michael J. Manfra, Gerhard Klimeck, Tillmann Christoph Kubis

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

    http://nanohub.org/resources/22923

  16. Effect of the High-k Dielectric/Semiconductor Interface on Electronic Properties in Ultra-thin Channels

    15 Oct 2015 | Online Presentations | Contributor(s): Daniel A. Valencia-Hoyos, Evan Michael Wilson, mark rodwell, Gerhard Klimeck, Michael Povolotskyi

    IWCE 2015 presentation.  Abstract and more information to be added at a later date. As logic devices continue to downscale, an increasing fraction of the channel atoms are in close contact...

    http://nanohub.org/resources/22875

  17. Self-Consistent Physical Modeling of SiOx-Based Memristor Structures

    15 Oct 2015 | Online Presentations | Contributor(s): Vihar Georgiev, Toufik Sadi, Asen Asenov

    IWCE 2015 presentation We employ a newly-developed three- dimensional (3D) physical simulator to study Si resistive switching nonvolatile memory (RRAM) structures. We couple a stochastic...

    http://nanohub.org/resources/22877

  18. Design and simulation of GaSb/InAs 2D Transmission enhanced TFET

    10 Oct 2015 | Online Presentations | Contributor(s): Pengyu Long, Evan Michael Wilson, Jun Huang, mark rodwell, Gerhard Klimeck, Michael Povolotskyi

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

    http://nanohub.org/resources/22876

  19. Density Functional Tight Binding (DFTB) Modeling in the Context of Ultra-Thin Silicon-on-Insulator MOSFETs

    10 Oct 2015 | Online Presentations | Contributor(s): Stanislav Markov

    IWCE 2015 presentation. We investigate the applicability of density functional tight binding (DFTB) theory [1][2], coupled to non-equilibrium Green functions (NEGF), for atomistic simulations of...

    http://nanohub.org/resources/22908

  20. Device Options and Trade-offs for 5 nm CMOS Technology Seminar Series

    05 Oct 2015 | Series | Contributor(s): Mark Lundstrom

    Today's CMOS technology is so-called 14-nm technology.  10 nm technology development is well underway, and 7 nm has begun. It will soon be time to select a technology for the 5 nm node....

    http://nanohub.org/resources/22879