Tags: nanoelectronics

Description

Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

All Categories (121-140 of 2028)

  1. Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs

    13 Nov 2015 | | Contributor(s):: Aryan Afzalian, Jun Huang, Hesameddin Ilatikhameneh, Santiago Alonso Perez Rubiano, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck

    IWCE 2015 presentation.  we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials, the number of unphysical modes to eliminate is very high compared to the si case previously reported...

  2. Simulation of Organic Solar Cell with Graphene Transparent Electrode

    13 Nov 2015 | | Contributor(s):: Paolo Paletti, giacomo ulisse, Giuseppe Iannaccone, Gianluca Fiori

    IWCE 2015 presentation. We present a simulation study of the performance of organic solar cell (OSC) exploiting graphene as transparent electrode. The approach is based on a multi-scale/multi-physics simulation framework, which is able to provide relevant information regarding the design...

  3. Unified View of Electron and Phonon Transport

    10 Nov 2015 | | Contributor(s):: Mark Lundstrom, Jesse Maassen

    A simple, unified view of electron and phonon transport is presented. Similarities and differences are identified, and new insights that come from addressing phonon transport from an electron transport perspective will be discussed.

  4. Analyzing Variability in Short-Channel Quantum Transport from Atomistic First Principles

    05 Nov 2015 | | Contributor(s):: Qing Shi

    IWCE 2015 invited presentation.  Due to random impurity fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this talk I shall present a theoretical formalism and its numerical realization to predict quantum-transport variability from...

  5. Computational Methods for the Design of Bioinspired Systems that Employ Nanodevices

    05 Nov 2015 | | Contributor(s):: Damien Querlioz, Adrien F. Vincent

    IWCE 2015 session keynote presentation. Biological systems compute by exploiting the rich physics of their natural “nanodevices”. In electronics, it is therefore attractive to design bioinspired computing paradigms, which exploit device physics more deeply than digital logic, in...

  6. A Multi-Scale Modeling Approach to Study Transport in Silicon Heterojunction Solar Cells

    03 Nov 2015 | | Contributor(s):: Pradyumna Muralidharan, Dragica Vasileska, Stephen M. Goodnick, Stuart Bowden

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

  7. Multi-Scale Modeling of Metal-CNT Interfaces

    03 Nov 2015 | | Contributor(s):: Martin Claus

    IWCE 2015 presentation.  the authors studied the impact of contact materials on cntfet behavior using multiscale modeling and simulation framework. a strong correlation between metal-cnt coupling strength, contact length and contact resistance was found. the atomistic simulation was used to...

  8. From Single-Stage to Device-Level Simulation of Coupled Electron and Phonon Transport in Quantum Cascade Lasers

    02 Nov 2015 | | Contributor(s):: Irena Knezevic

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

  9. Multi-Scale Quantum Simulations of Conductive Bridging RAM

    02 Nov 2015 | | Contributor(s):: Michael Povolotskyi, nicolas onofrio, David M Guzman, Alejandro Strachan, Gerhard Klimeck

    IWCE 2015 presentation.

  10. Green Light on Germanium

    02 Nov 2015 | | Contributor(s):: peide ye

    This talk will review recent progress as well as challenges on Ge research for future logic applications with emphasis on the breakthrough work at Purdue University on Ge nFET which leads to the demonstration of the world first Ge CMOS circuits on Si substrates. Ge device technology includes...

  11. Inter-band Tunnel Transistors: Opportunities and Challenges

    30 Oct 2015 | | Contributor(s):: Suman Datta

    In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.

  12. Negative Capacitance Ferroelectric Transistors: A Promising Steep Slope Device Candidate?

    30 Oct 2015 | | Contributor(s):: Suman Datta

    In this talk, we will review progress in non-perovskite ALD based ferroelectric dielectrics which have strong implication for VLSI compatible negative capacitance Ferroelectric FETs.

  13. Lorentzian fitting tool for phonon spectral energy density and general use

    20 Oct 2015 | | Contributor(s):: Tianli Feng, Xiulin Ruan

    Fit a general data set (or specially the phonon spectral energy density) as a Lorentzian function to obtain the peak position (or phonon frequency) and full width at half maximum (or relaxation time).

  14. Dissipative Quantum Transport Using One-Particle Time-Dependent (Conditional) Wave Functions

    16 Oct 2015 | | Contributor(s):: Xavier Oriols

    IWCE 2015 presentation. an effective single-particle schrodinger equation to include dissipation into quantum devices is presented. this effective equation is fully understood in the context of bohmian mechanics, a theory of particles and waves, where it is possible to define unambiguously...

  15. Nisha Mariam Johnson

    http://nanohub.org/members/131528

  16. Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films

    30 Sep 2015 | | Contributor(s):: Joydeep Ghosh, Dmitri Osintsev, Viktor Sverdlov, S. Selberherr

    IWCE 2015 presentation.  the electron spin properties are promising for future spin-driven devices. in contrast to charge, spin is not a conserved quantity, and having sufficiently long spin lifetime is critical for applications. silicon, the major material of microelectronics, also appears...

  17. NEMO5: Why must we treat topological insulator nanowires atomically?

    13 Oct 2015 | | Contributor(s):: Fan Chen, Michael J. Manfra, Gerhard Klimeck, Tillmann Christoph Kubis

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

  18. Effect of the High-k Dielectric/Semiconductor Interface on Electronic Properties in Ultra-thin Channels

    30 Sep 2015 | | Contributor(s):: Daniel A. Valencia-Hoyos, Evan Michael Wilson, mark rodwell, Gerhard Klimeck, Michael Povolotskyi

    IWCE 2015 presentation.  Abstract and more information to be added at a later date. As logic devices continue to downscale, an increasing fraction of the channel atoms are in close contact with oxide atoms of the gate. These surface atoms experience a chemical environment that is distinct...

  19. Self-Consistent Physical Modeling of SiOx-Based Memristor Structures

    30 Sep 2015 | | Contributor(s):: Vihar Georgiev, Toufik Sadi, Asen Asenov

    IWCE 2015 presentation We employ a newly-developed three- dimensional (3D) physical simulator to study Si resistive switching nonvolatile memory (RRAM) structures. We couple a stochastic simulation of ion transport to the ‘atomistic’ simulator GARAND and a self-heating model to...

  20. Design and simulation of GaSb/InAs 2D Transmission enhanced TFET

    30 Sep 2015 | | Contributor(s):: Pengyu Long, Evan Michael Wilson, Jun Huang, mark rodwell, Gerhard Klimeck, Michael Povolotskyi

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.