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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Molecular Exploration Tool
01 Aug 2014 | | Contributor(s):: Xueying Wang, nicolas onofrio, Alejandro Strachan, David M Guzman
The tool can display the molecule structures and run Lammps simulations.
Lessons From Nanoelectronics
09 Dec 2015 | | Contributor(s):: Supriyo Datta
This talk is about a less-appreciated by-product of the microelectronics revolution, namely the deeper understanding of current flow, energy exchange and device operation that it has enabled, which forms the basis for what we call the bottom-up approach.
A Tutorial Introduction to Negative-Capacitor Landau Transistors: Perspectives on the Road Ahead
03 Dec 2015 | | Contributor(s):: Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader class of phase-change devices and systems (e.g., transistors, memories, MEMS, logic-in-memory...
GaN/InGaN/GaN Disk-in-Wire Light Emitters: Polar vs. Nonpolar Orientations
24 Nov 2015 | | Contributor(s):: Rezaul Karim Nishat, S. Alqahtani, Ye Wu, Vinay Uday Chimalgi, Shaikh S. Ahmed
IWCE 2015 presentation. in this paper, we computationally evaluate and compare the performance of recently reported in0.75n/gan disk-in-wire light emitting diodes (led) grown in the polar (c-plane) and nonpolar (m-plane) crystallographic orientations in terms of built-in fields, electronic...
Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence
12 Nov 2015 | | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada
IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...
Amorphous Semiconductor Transport Simulator
08 Nov 2015 | | Contributor(s):: Kevin Stewart
Estimate the carrier mobility in an amorphous semiconductor for thin-film transistor applications.
Time-Resolved Computational Method for Atomistic Open System Simulations
12 Nov 2015 | | Contributor(s):: Bozidar Novakovic, Gerhard Klimeck
IWCE 2015 presentation. Abstract and more information to be added at a later date.
Mode Space Tight Binding Model for Ultra-Fast Simulations of III-V Nanowire MOSFETs and Heterojunction TFETs
12 Nov 2015 | | Contributor(s):: Aryan Afzalian, Jun Huang, Hesameddin Ilatikhameneh, Santiago Alonso Perez Rubiano, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck
IWCE 2015 presentation. we explore here the suitability of a mode space tight binding algorithm to various iii-v homo- and heterojunction nanowire devices. we show that in iii-v materials, the number of unphysical modes to eliminate is very high compared to the si case previously reported...
Simulation of Organic Solar Cell with Graphene Transparent Electrode
12 Nov 2015 | | Contributor(s):: Paolo Paletti, giacomo ulisse, Giuseppe Iannaccone, Gianluca Fiori
IWCE 2015 presentation. We present a simulation study of the performance of organic solar cell (OSC) exploiting graphene as transparent electrode. The approach is based on a multi-scale/multi-physics simulation framework, which is able to provide relevant information regarding the design...
Unified View of Electron and Phonon Transport
06 Nov 2015 | | Contributor(s):: Mark Lundstrom, Jesse Maassen
A simple, unified view of electron and phonon transport is presented. Similarities and differences are identified, and new insights that come from addressing phonon transport from an electron transport perspective will be discussed.
Analyzing Variability in Short-Channel Quantum Transport from Atomistic First Principles
26 Oct 2015 | | Contributor(s):: Qing Shi
IWCE 2015 invited presentation. Due to random impurity fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this talk I shall present a theoretical formalism and its numerical realization to predict quantum-transport variability from...
Computational Methods for the Design of Bioinspired Systems that Employ Nanodevices
26 Oct 2015 | | Contributor(s):: Damien Querlioz, Adrien F. Vincent
IWCE 2015 session keynote presentation. Biological systems compute by exploiting the rich physics of their natural “nanodevices”. In electronics, it is therefore attractive to design bioinspired computing paradigms, which exploit device physics more deeply than digital logic, in...
A Multi-Scale Modeling Approach to Study Transport in Silicon Heterojunction Solar Cells
26 Oct 2015 | | Contributor(s):: Pradyumna Muralidharan, Dragica Vasileska, Stephen M. Goodnick, Stuart Bowden
Multi-Scale Modeling of Metal-CNT Interfaces
26 Oct 2015 | | Contributor(s):: Martin Claus
IWCE 2015 presentation. the authors studied the impact of contact materials on cntfet behavior using multiscale modeling and simulation framework. a strong correlation between metal-cnt coupling strength, contact length and contact resistance was found. the atomistic simulation was used to...
From Single-Stage to Device-Level Simulation of Coupled Electron and Phonon Transport in Quantum Cascade Lasers
26 Oct 2015 | | Contributor(s):: Irena Knezevic
Multi-Scale Quantum Simulations of Conductive Bridging RAM
30 Oct 2015 | | Contributor(s):: Michael Povolotskyi, nicolas onofrio, David M Guzman, Alejandro Strachan, Gerhard Klimeck
IWCE 2015 presentation.
Green Light on Germanium
02 Nov 2015 | | Contributor(s):: peide ye
This talk will review recent progress as well as challenges on Ge research for future logic applications with emphasis on the breakthrough work at Purdue University on Ge nFET which leads to the demonstration of the world first Ge CMOS circuits on Si substrates. Ge device technology includes...
Inter-band Tunnel Transistors: Opportunities and Challenges
27 Oct 2015 | | Contributor(s):: Suman Datta
In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.
Negative Capacitance Ferroelectric Transistors: A Promising Steep Slope Device Candidate?
30 Oct 2015 | | Contributor(s):: Suman Datta
In this talk, we will review progress in non-perovskite ALD based ferroelectric dielectrics which have strong implication for VLSI compatible negative capacitance Ferroelectric FETs.
Lorentzian fitting tool for phonon spectral energy density and general use
20 Oct 2015 | | Contributor(s):: Tianli Feng, Xiulin Ruan
Fit a general data set (or specially the phonon spectral energy density) as a Lorentzian function to obtain the peak position (or phonon frequency) and full width at half maximum (or relaxation time).