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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
ECE 695A Lecture 30R: Review Questions
08 Apr 2013 | Online Presentations | Contributor(s): Muhammad Alam
What is the difference between extrinsic vs. intrinsic breakdown?
Does gas dielectric have extrinsic breakdown? Why or why not?
What does ESD damage and the plasma damage to thin...
ECE 695A Lecture 30: Breakdown in Dielectrics with Defects
Theory of pre-existing defects: Thin oxides
Theory of pre-existing defects: thick oxides
ECE 695A Lecture 29R: Review Questions
Mention a few differences between thick and thin oxide breakdown.
Is breakdown in thick oxides contact dominated? Can I use AHI theory here?
How does the Paschen’s...
ECE 695A Lecture 29A: Appendix - Dimension of a Surface
ECE 695A Lecture 28: Circuit Implications of Dielectric Breakdown
Part 1 - Understanding Post-BD FET behavior
BD position determination
Hard and Soft BD in FETs
Distinguishing leakage and intrinsic FET parameters shifts
Part 2 - Impact of...
ECE 695A Lecture 29: Breakdown of Thick Dielectrics
Spatial and temporal dynamics during breakdown
Breakdown in bulk oxides: puzzle
ECE 695A Lecture 27R: Review Questions
29 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
ECE 695A Lecture 26-1: Statistics of Soft Breakdown via Methods of Markov Chains
28 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Spatial vs. Temporal correlation
Theory of correlated Dielectric Breakdown
Excess leakage as a signature of correlated BD
ECE 695A Lecture 26-2: Statistics of Soft Breakdown (Breakdown Position correlation)
Position and time correlation of BD spot
How to determine the position of the BD Spot
Position correlation in BD spots
Why is localization so weak?
ECE 695A Lecture 26R: Review Questions
Carbon-Based Nanoswitch Logic
28 Mar 2013 | Online Presentations | Contributor(s): Stephen A. Campbell
This talk discusses a rather surprising possibility: the use of carbon-based materials such as carbon nanotubes and grapheneto make nanomechanical switches with at least an order of magnitude...
ECE 595E Lecture 23: Electronic Bandstructures
27 Mar 2013 | Online Presentations | Contributor(s): Peter Bermel
3D Lattice Types
Full 3D Photonic Bandgap Structures
Rod-Hole 3D PhCs
ECE 695A Lecture 25R: Review Questions
27 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Explain why percolation resistance is area independent?
Why is the physical origin of the distribution of percolation resistance?
How would the ratio of hard and soft...
Empirical Tight-binding Parameterization of SmSe in the sp3d5f7s* model
26 Mar 2013 | Downloads | Contributor(s): Zhengping Jiang, Marcelo Kuroda, Yaohua Tan, Dennis M. Newns, Michael Povolotskyi, Timothy Boykin, Tillmann Christoph Kubis, Gerhard Klimeck, Glenn J. Martyna
The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and the ETB...
Showkat Hassan Mir
ECE 695A Lecture 24: Statistics of Oxide Breakdown - Cell percolation model
21 Mar 2013 | Online Presentations | Contributor(s): Muhammad Alam
Observations: Failure times are statistically distributed
Models of Failure Distribution: Extrinsic vs. percolation
Percolation theory of multiple Breakdown
ECE 695A Lecture 24R: Review Questions
ECE 695A Lecture 25: Theory of Soft and Hard Breakdown
Oxide breakdowns need not be catastrophic
Observations about soft vs. hard breakdown
A simple model for soft/hard breakdown
Interpretation of experiments
ECE 595E Lecture 21: 3D Bandstructures
19 Mar 2013 | Online Presentations | Contributor(s): Peter Bermel
Recap from Monday
2D Photonic Bandstructures
Periodic Dielectric Waveguides
Photonic Crystal Slabs
ECE 595E Lecture 24: Electronic Bandstructure Simulation Tools
Electronic bandstructure lab
Density functional theory (DFT)
DFT in Quantum ESPRESSO