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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
ECE 695A Lecture 15: Off-state HCI Degradation
19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
ON vs. OFF State HCI Degradation
Origin of hot carriers at off-state
SiH vs. SiO – who is getting broken? Voltage acceleration factors by scaling
ECE 695A Lecture 16: Temperature Dependence of HCI
Empirical observations regarding HCI
Theory of bond dissociation: MVE vs. RRK
Hot carrier dissociation of SiH bonds
Hot carrier dissociation of SiO bonds
ECE 695A Lecture 13: Introductory Lecture on HCI Degradation
Background and features of HCI Degradation
Origin of Hot carriers
Theory of Si-H Bond Dissociation
Theory of Si-O Bond...
ECE 695A Lecture 13R: Review Questions
Both SiH and SiO are involved in HCI degradation. Give two evidences.
Why doesn’t HCI occur during NBTI stress condition?
I suggested that HCI curve can shifted...
ECE 695A Lecture 5R: Review Questions
12 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
What is the difference between coordination and composition?
Is periodicity essential for a defect-free structure?
Why can’t the amorphous material have arbitrary ring...
ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation
08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
ECE 695A Lecture 11R: Review Questions
Does Einstein relationship hold for activated diffusion?
People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you...
ECE 695A Lecture 12: Field Dependence of NBTI
Background: Field dependent degradation
Components of field-dependent dissociation:
Voltage acceleration factors
ECE 695A Lecture 12R: Review Questions
Explain the difference between local field and global field within an oxide.
Explain physically why electric field decreases bond strength.
How does the dissociation...
ECE 695A Lecture 9R: Review Questions
Does NBTI power-exponent depend on voltage or temperature?
Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?
How does one know that...
ECE 695A Lecture 11: Temperature Dependence of NBTI
07 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review: Temperature activation & NBTI
Temperature dependent forward/reverse rates
Temperature dependence of diffusion coefficient
Material dependence of activation...
ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies
06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
NBTI stress and relaxation by R-D model
Frequency independence and lifetime projection
Duty cycle dependence
The magic of measurement
ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase
Background: Time-dependent degradation
The Reaction-Diffusion model
Approximate solution to R-D model in stress phase
Degradation free transistors
Chirag Jayant Patil
ECE 695A Lecture 6: Defects in the Bulk and at Interfaces
01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Strain in materials/origin of defects
Examples: bulk defects
Examples: interface defects
ECE 695A Lecture 8: Phenomenological Observations for NBTI
Time, voltage, temperature dependencies
ECE 695A Lecture 8R: Review Questions
What is the distinction between BTI and NBTI phenomena?
What does it mean that a process is thermally activated?
What is the difference between parametric failure and catastrophic failure?...
ECE 695A Lecture 5: Amorphous Material/Interfaces
29 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Amorphous vs. crystalline materials
Defect-free amorphous material
Origin of defects (Maxwell’s relation)
ECE 695A Lecture 7: Trapping in Pre-existing Traps
Pre-existing vs. stress-induced traps
Voltage-shift in pre-existing bulk/interface traps
Random Telegraph Noise, 1/f noise
ECE 695A Lecture 7A: Appendix - Theory of Stochastic Distribution
Supplemental information for Lecture 7: Trapping in Pre-existing Traps