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Tags: nanoelectronics

Description

Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

All Categories (41-60 of 3586)

  1. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | Publications | Contributor(s): Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...

    http://nanohub.org/resources/18694

  2. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    28 Jun 2013 | Publications | Contributor(s): Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices...

    http://nanohub.org/resources/18707

  3. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    28 Jun 2013 | Publications | Contributor(s): raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving...

    http://nanohub.org/resources/18690

  4. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    28 Jun 2013 | Publications | Contributor(s): Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...

    http://nanohub.org/resources/18705

  5. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    28 Jun 2013 | Publications | Contributor(s): Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport...

    http://nanohub.org/resources/18742

  6. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | Publications | Contributor(s): Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...

    http://nanohub.org/resources/18769

  7. Device Physics and Simulation of Silicon Nanowire Transistors

    28 Jun 2013 | Publications | Contributor(s): Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...

    http://nanohub.org/resources/18740

  8. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

    28 Jun 2013 | Publications | Contributor(s): Kausar Banoo

    Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators...

    http://nanohub.org/resources/18767

  9. Electron Phonon Interaction in Carbon Nanotube Devices

    28 Jun 2013 | Publications | Contributor(s): Sayed Hasan

    With the end of silicon technology scaling in sight, there has been a lot of interest in alternate novel channel materials and device geometry. Carbon nanotubes, the ultimate one-dimensional (1D)...

    http://nanohub.org/resources/18733

  10. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | Publications | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...

    http://nanohub.org/resources/18738

  11. Modeling Quantum Transport i Nanoscale Transistors

    28 Jun 2013 | Publications | Contributor(s): Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore,...

    http://nanohub.org/resources/18744

  12. Nanoscale MOSFETS: Physics, Simulation and Design

    28 Jun 2013 | Publications | Contributor(s): Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...

    http://nanohub.org/resources/18763

  13. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | Publications | Contributor(s): Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed the channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...

    http://nanohub.org/resources/18747

  14. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    28 Jun 2013 | Publications | Contributor(s): Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive...

    http://nanohub.org/resources/18765

  15. Landauer Approach to Thermoelectrics

    23 Jun 2013 | Publications | Contributor(s): Changwook Jeong

    Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent...

    http://nanohub.org/resources/18681

  16. naveen kaushik

    http://nanohub.org/members/83665

  17. Introduction to Compact Models and Circuit Simulation

    21 Jun 2013 | Online Presentations | Contributor(s): Jaijeet Roychowdhury

    With NEEDS introduction by Mark Lundstrom. This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models.

    http://nanohub.org/resources/18678

  18. Guidelines for Writing NEEDS-certified Verilog-A Compact Models

    19 Jun 2013 | Online Presentations | Contributor(s): Tianshi Wang, Jaijeet Roychowdhury

    This talk contains a brief introduction to Verilog-A and suggests some initial guidelines for writing Verilog-A versions of NEEDS models. For more about the history of Verilog-A and additional...

    http://nanohub.org/resources/18621

  19. Introduction to Compact Models and Circuit Simulation

    19 Jun 2013 | Online Presentations | Contributor(s): Tianshi Wang, Jaijeet Roychowdhury

    The presentation is a gentle introduction to compact models, basic circuit simulation concepts, and flows for developing compact models. The roadmap for the NEEDS-SPICE platform, being developed...

    http://nanohub.org/resources/18616

  20. NEEDS Introduction

    19 Jun 2013 | Online Presentations | Contributor(s): Mark Lundstrom

    NEEDS is an initiative supported by the National Science Foundation and the Semiconductor Research Corporation with a mission to develop the critical missing link needed to transform...

    http://nanohub.org/resources/18626

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.