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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Magnetic Tunnel Junction Lab
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23 Sep 2013 | Tools | Contributor(s): Samiran Ganguly, Deepanjan Datta, Chen Shang, Sankarsh Ramadas, Sayeef Salahuddin, Supriyo Datta
Calculate Resistance, Tunneling Magneto Resistance, Spin Torques, and Switching characteristics of a Magnetic Tunnel Junction
02 Aug 2013 | Tools | Contributor(s): Martin Hunt, Lei Cao, Alejandro Strachan, Marisol Koslowski
A phase field approach to plastic deformation in nano crystalline materials
Efficiency Enhancement for Nanoelectronic Transport Simulations
02 Feb 2014 | Papers | Contributor(s): Jun Huang
PhD thesis of Jun Huang
Continual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically...
ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances
25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom
Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.
ECE 612 Lecture 9: Subthreshold Conduction
Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006 teaching.
Aaron Jay Hoover
Uniaxial and Biaxial Stress Strain Calculator for Semiconductors
16 Jan 2014 | Tools | Contributor(s): Jamie Teherani
Simulate stress or strain along user-defined Miller directions for arbitrary stress/strain configurations.
Linearized Boltzmann transport calculator for thermoelectric materials
11 Jul 2013 | Tools | Contributor(s): Je-Hyeong Bahk, Robert Benjamin Post, Kevin Margatan, Zhixi Bian, Ali Shakouri
Simulation tool to calculate thermoelectric transport properties of bulk materials based on their multiple nonparabolic band structure information using the linearized Boltzmann transport equation
Model and Algorithm Prototyping Platform
29 Sep 2013 | Tools | Contributor(s): Jaijeet Roychowdhury, Tianshi Wang
Thermoelectric Power Generator System Optimization and Cost Analysis
26 Sep 2013 | Tools | Contributor(s): Kaz Yazawa, Kevin Margatan, Je-Hyeong Bahk, Ali Shakouri
Simulate cost and efficiency trade-off of a thermoelectric device as a function of material properties and heat transfer coefficients
Tapas Kumar Maiti
Dr. T K Maiti obtained his Master of Science degree with a Gold Medal in Physics from Vidyasagar University, India, 2005. In Nov. 2005, he joined Microelectronics Centre, Department of...
Simon Peter Tsaoussis
Akshay Kumar Mahadev Arabhavi
17 Sep 2013 | Tools | Contributor(s): Kyle Conrad, Jesse Maassen, Mark Lundstrom
This tool calculates the distribution of modes, the electronic thermoelectric transport coefficients, and the lattice thermal transport properties from band structure information.