Tags: nanoelectronics


Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

All Categories (81-100 of 2031)

  1. Self-energies: Opening Doors for Nanotechnology

    07 Apr 2016 | | Contributor(s):: Tillmann Christoph Kubis

    In this talk, it will be shown how the concept of self-energies can be used to interface all these fields into the same nanotechnology modeling framework. Self-energies are most commonly used in the quantum transport method of nonequilibrium Green’s functions (NEGF). The NEGF method is...

  2. Optoelectronic Spintronics and Quantum Photonics in 2D Materials

    07 Apr 2016 | | Contributor(s):: John Schaibley

    First, I will discuss the physics and applications of 2D heterostructures composed of stacked monolayers of MoSe_2 and WSe_2 . These heterostructures host interlayer valley excitons where the electrons and holes are located in different layers. These spatially indirect excitons exhibit long...

  3. Björn Christensen


  4. Piezotronics in 2D Piezoelectric Semiconductors

    01 Apr 2016 | | Contributor(s):: Wenzhuo Wu

    Monolayer MoS2 and other TMDCs have been theoretically predicted to exhibit piezoelectricity due to the strain induced lattice distortion and associated ion charge polarization, suggesting possible applications of these 2D nanomaterials in nano-scale electromechanical devices that take advantage...

  5. Modeling Quantum Acceleration (Multi-Band Drift) of Bloch Waves in Nanowires

    24 Mar 2016 | | Contributor(s):: Raghuraj Hathwar, marco saraniti, Stephen M. Goodnick

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

  6. Molecular Transistors

    16 Mar 2016 | | Contributor(s):: Mark A. Reed

    Here we report the observation of such a solid-state molecular device, in which transport current is directly modulated by an external gate voltage. We have realized a molecular transistor made from the prototype molecular junction, benzene dithiol, and have used a combination of spectroscopies...

  7. On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects

    09 Mar 2016 | | Contributor(s):: Yannick Wimmer, Wolfgang Goes

    IWCE Presentation. Hole trapping in oxide defects in the gate insulator of MOSFET transistors has been linked to a wide range of phenomena like random telegraph noise, 1/f noise, bias temperature instability (BTI), stress-induced leakage current and hot carrier degradation [1–5]....



  9. Adventures with Oxide Interfaces: Electronics, Magnetism, Memory, Energy and Biology

    25 Feb 2016 | | Contributor(s):: T. Venky Venkatesan

    In this talk I share a personal close up view of the evolution of this field and where I see it going. I will cover polar/non-polar oxide interface conductivity, defect induced magnetism, FE tunnel junctions and some recent work on bio-oxide interfaces.

  10. nanoHUB Used in Research: A One Developer/User View

    18 Feb 2016 | | Contributor(s):: Dragica Vasileska

    In this presentation I will give overview of selected nanoHUB tools and their potential for performing state- of-the-art research. The tools selected for this purpose include SCHRED, QuaMC2D, and OMEN nanowire/ NEMO5. ...

  11. Progress Toward Wafer-Scale Thermionic Energy Conversion

    11 Feb 2016 | | Contributor(s):: Roger T. Howe

    I will provide an update on recent progress at Stanford on achieving higher efficiency, wafer-scale thermionic converters – particularly, in achieving very high thermal isolation between the cathode and the anode and in new anodes with work functions less than 1 eV.

  12. Memory-Efficient Particle Annihilation Algorithm for Wigner Monte Carlo Simulations

    10 Feb 2016 | | Contributor(s):: Paul Ellinghaus

    IWCE 2015 presentation. The Wigner Monte Carlo solver, using the signed-particle method, is based on the generation and annihilation of numerical particles. The memory demands of the annihilation algorithm can become exorbitant, if a high spatial resolution is used, because the entire...

  13. Ultra-Thin Silicon Membranes and Nanowires as Nanophononic and Thermoelectric Devices

    10 Feb 2016 | | Contributor(s):: Davide Donadio

    IWCE 2015 presentation. Engineering silicon at the nanoscale paves the way to new applications of this cheap, abundant, and technologically and environmentally friendly material. Transistors in nanoelectronics have reached the 10 nm size limit, implying very high density but also critical issues...

  14. Progress on Quantum Transport Simulation Using Empirical Pseudopotentials

    10 Feb 2016 | | Contributor(s):: Jingtian Fang, William Gerard Hubert Vandenberghe, Massimo V Fischetti

    IWCE 2015 presentation. After performing one-dimensional simulation of electron transport in narrow quantum wires without gate control in (Fang et al., 2014) and (Fu and Fischetti, 2013) using the open boundary-conditions full-band plane-wave transport formalism derived in (Fu, 2013), we now...

  15. Wigner Function Approach to Quantum Transport in QCLs

    10 Feb 2016 | | Contributor(s):: Olafur Jonasson, Irena Knezevic

    IWCE 2015 presentation.  Abstract and more information to be added at a later date.

  16. IWCE 2015: Openning Remarks

    10 Feb 2016 | | Contributor(s):: Gerhard Klimeck

    IWCE 2015 presentation.  Welcome and opening remarks for the 18th International Workshop on Computational Electronics.

  17. Indiana: A State that Works - An Overview of Public-Private Partnerships related to Nanoelectronics, Materials, Energy Storage, and Manufacturing

    10 Feb 2016 | | Contributor(s):: Ian Steff

  18. Multiscale Modeling of Graphene-Metal Contacts

    01 Feb 2016 | | Contributor(s):: T. Cusati, Gianluca Fiori, A. Fortunelli, Giuseppe Iannaccone

    IWCE 2015 presentation. The quality of contacts between metals and two- dimensional materials is a critical aspect for the performance of transistors based on two-dimensional materials. In this talk we focus on an approach to multiscale modeling of graphene- metal contacts, considering both...

  19. Thermal Conductivity of III-V Semiconductor Superlattices

    25 Jan 2016 | | Contributor(s):: Song Mei, Zlatan Aksamija, Irena Knezevic

    IWCE 2015 presentation.  An InGaAs/InAlAs superlattice (SL) on an InP substrate is the mainstream material system for mid- IR quantum cascade lasers (QCL). The thermal conductivity tensor of SLs is critical for energy-efficient performance of QCLs; understanding the relative importance of...

  20. Study of the Interface Roughness Models using 3D Finite Element Schrödinger Equation Corrected Monte Carlo Simulator on Nanoscaled FinFET

    25 Jan 2016 | | Contributor(s):: Daniel Nagy, Muhammad Ali A. Elmessary, Manuel Aldegunde, Karol Kalna

    IWCE 2015 presentation.  Interface roughness scattering (IRS) is one of the key limiting scattering mechanism for both planar and non-planar CMOS devices. To predict the performance of future scaled devices and new structures the quantum mechanical confinement based IRS models are...