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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Calculation of phonon transmission in Si/PtSi heterostructures
25 Jan 2016 | | Contributor(s):: Jung Hyun Oh, Mincheol Shin
In this work we examine the suppression of phonon transport in another example, Si and SiPt heterostructures (3D). This heterostrucure is believed to have the benefit that the electrical conductance can be kept high while the phonon propagation is suppressed due to the large acoustic impedance...
Variational Formulation of Stable Discrete k · p Models
25 Jan 2016 | | Contributor(s):: William R Frensley
IWCE 2015 presentation. the longstanding problem of spurious states in k·: ; p models of semiconductor nanostructures has been shown to be an artifact of the use of the centereddifference approximation to the gradient, and it has been shown that stable models may be constructed on the...
OOMMF: Object Oriented MicroMagnetic Framework
21 Jan 2016 | | Contributor(s):: Michael Joseph Donahue, Donald Gene Porter
A portable, extensible public domain program and associated tools for micromagnetic simulation
Spectral phonon relaxation time calculation tool by using normal mode analysis based on molecular dynamics
19 Jan 2016 | | Contributor(s):: Tianli Feng, Divya Chalise, Xiulin Ruan
Calculate the spectral phonon relaxation time in solids based on molecular dynamics.
nanoHUB - Educational Tour de Force
14 Jan 2016 | | Contributor(s):: David K. Ferry
nanoHUB was originally created to bring together the computational electronics world as a place where programs and results could be efficiently shared. For that purpose, it has matured and grown to where it is a major force in the area. But, it can also be a great tool for education, an...
nanoHUB Citations: Co-author Network Generator
06 Mar 2013 | | Contributor(s):: Hanjun Xian
Generate the co-author network based on all scholarly citations of nanoHUB
Advanced Thermoelectric Power Generation Simulator for Waste Heat Recovery and Energy Harvesting
30 Jun 2015 | | Contributor(s):: Je-Hyeong Bahk, Kevin Margatan, Kaz Yazawa, Ali Shakouri
Tool to simulate thermoelectric power generation device/system with temperature-dependent material properties for waste heat recovery and wearable energy harvesting
Screening Effect on Electric Field Produced by Spontaneous Polarization in ZnO Quantum Dot in Electrolyte
16 Dec 2015 | | Contributor(s):: Xinia Meshik, Min S. Choi, Mitra Dutta, Michael Stroscio
IWCE 2015 presentation. in this paper, the calculation of the strength of the electrostatic field produced by zno quantum dots due to the spontaneous polarization in a physiological electrolyte and its application on retinal horizontal cells are presented.
Anisotropic Schrödinger Equation Quantum Corrections for 3D Monte Carlo Simulations of Nanoscale Multigate Transistors
16 Dec 2015 | | Contributor(s):: Karol Kalna, Muhammad Ali A. Elmessary, Daniel Nagy, Manuel Aldegunde
IWCE 2015 presentation. We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox. The MC toolbox was tested against experimental ID-VG characteristics of the 22 nm gate...
Quick Review of Semiconductor Fundamentals
18 Dec 2015 | | Contributor(s):: Mark Lundstrom
This lecture quickly summarizes some important semiconductor fundamentals. For those acquainted with semiconductors, it may be useful as a brief refresher. For those just getting started with semiconductors, my hope is that this lecture provides just enough understanding to allow you to begin...
MIF generator for OOMMF
17 Jun 2015 | | Contributor(s):: Zachary Yu, Jung Jin Park, Tanya Faltens, Rafatul Faria, Supriyo Datta
Provide highly-customized input model file for OOMMF
Thermionic Escape in Quantum Well Solar Cell
16 Dec 2015 | | Contributor(s):: Nicolas Cavassilas, Fabienne Michelini, Marc Bescond
This theoretical work analyzes the photogeneration and the escape of carrier in InGaN/GaN core-shell nanowires. Our electronic transport model considers quantum behaviors such as confinement, tunneling, electron-phonon scattering and electron-photon interactions. The large lattice mismatch...
nanoHUB-U Fundamentals of Nanoelectronics B: Quantum Transport: Scientific Overview
11 Dec 2015 | | Contributor(s):: Supriyo Datta
This video is the Scientific Overview for the nanoHUB-U course "Fundamentals of Nanoelectronics Part B: Quantum Transport" by Supriyo Datta.
Molecular Exploration Tool
01 Aug 2014 | | Contributor(s):: Xueying Wang, nicolas onofrio, Alejandro Strachan, David M Guzman
The tool can display the molecule structures and run Lammps simulations.
Lessons From Nanoelectronics
09 Dec 2015 | | Contributor(s):: Supriyo Datta
This talk is about a less-appreciated by-product of the microelectronics revolution, namely the deeper understanding of current flow, energy exchange and device operation that it has enabled, which forms the basis for what we call the bottom-up approach.
A Tutorial Introduction to Negative-Capacitor Landau Transistors: Perspectives on the Road Ahead
03 Dec 2015 | | Contributor(s):: Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NC-FET is just a special case of a much broader class of phase-change devices and systems (e.g., transistors, memories, MEMS, logic-in-memory...
GaN/InGaN/GaN Disk-in-Wire Light Emitters: Polar vs. Nonpolar Orientations
24 Nov 2015 | | Contributor(s):: Rezaul Karim Nishat, S. Alqahtani, Ye Wu, Vinay Uday Chimalgi, Shaikh S. Ahmed
IWCE 2015 presentation. in this paper, we computationally evaluate and compare the performance of recently reported in0.75n/gan disk-in-wire light emitting diodes (led) grown in the polar (c-plane) and nonpolar (m-plane) crystallographic orientations in terms of built-in fields, electronic...
Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence
12 Nov 2015 | | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada
IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...