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Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.
This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.'
More information on Nanoelectronics can be found here.
Effect of the High-k Dielectric/Semiconductor Interface on Electronic Properties in Ultra-thin Channels
15 Oct 2015 | | Contributor(s):: Daniel A. Valencia-Hoyos, Evan Michael Wilson, mark rodwell, Gerhard Klimeck, Michael Povolotskyi
IWCE 2015 presentation. Abstract and more information to be added at a later date. As logic devices continue to downscale, an increasing fraction of the channel atoms are in close contact with oxide atoms of the gate. These surface atoms experience a chemical environment that is distinct...
Self-Consistent Physical Modeling of SiOx-Based Memristor Structures
15 Oct 2015 | | Contributor(s):: Vihar Georgiev, Toufik Sadi, Asen Asenov
IWCE 2015 presentation We employ a newly-developed three- dimensional (3D) physical simulator to study Si resistive switching nonvolatile memory (RRAM) structures. We couple a stochastic simulation of ion transport to the ‘atomistic’ simulator GARAND and a self-heating model to...
Design and simulation of GaSb/InAs 2D Transmission enhanced TFET
10 Oct 2015 | | Contributor(s):: Pengyu Long, Evan Michael Wilson, Jun Huang, mark rodwell, Gerhard Klimeck, Michael Povolotskyi
IWCE 2015 presentation. Abstract and more information to be added at a later date.
Density Functional Tight Binding (DFTB) Modeling in the Context of Ultra-Thin Silicon-on-Insulator MOSFETs
10 Oct 2015 | | Contributor(s):: Stanislav Markov
IWCE 2015 presentation. We investigate the applicability of density functional tight binding (DFTB) theory , coupled to non-equilibrium Green functions (NEGF), for atomistic simulations of ultra-scaled electron devices, using the DFTB+ code . In the context of ultra-thin...
Device Options and Trade-offs for 5 nm CMOS Technology Seminar Series
05 Oct 2015 | | Contributor(s):: Mark Lundstrom
Today's CMOS technology is so-called 14-nm technology. 10 nm technology development is well underway, and 7 nm has begun. It will soon be time to select a technology for the 5 nm node. To help understand the device options, what each on promises, what the challenges and trade-offs are,...
Nanometer-Scale III-V Electronics: from Quantum-Well Planar MOSFETs to Vertical Nanowire MOSFETs
05 Oct 2015 | | Contributor(s):: Juses A. del Alamo
This talk will review recent progress as well as challenges confronting III-V electronics for future logic applications with emphasis on the presenter’s research activities at MIT.
The Deployment and Evolution of the First NEEDS- Certified Model — MIT Virtual Source Compact Model for Silicon Nanotransistors
04 Oct 2015 | | Contributor(s):: Shaloo Rakheja
In my talk, I will walk you through the fundamental steps involved in developing compact models, using the MVS model as an example. From the “lessons learned” in the process of MVS release in 2013 and its subsequent updates, I will provide a checklist of good practices to adopt while...
Non-Equilibrium Green's Function (NEGF): A Different Perspective
18 Sep 2015 | | Contributor(s):: Supriyo Datta
The NEGF method was established in the 1960’s through the classic work of Keldysh and others  using the methods of many- body perturbation theory (MBPT) and this approach is widely used in the literature . By contrast I have introduced a different approach starting with the...
Short-Wavelength Spin-Wave Generation by a Microstrip Line
17 Sep 2015 | | Contributor(s):: Adam Papp, Wolfgang Porod
IWCE 2015 presentation. We investigate the use of microstrip lines for short-wavelength spin-wave generation in magnetic thin films. We use micromagnetic and electromagnetic simulations to estimate the generated wave amplitudes for different geometries and at different frequencies. Our...
Self-Consistent Field and Master Equation Approach to Calculating the Dielectric Function of Graphene
17 Sep 2015 | | Contributor(s):: Farhad Karimi, Irena Knezevic
VALint: the NEEDS Verilog-A Checker (BETA)
21 Jan 2015 | | Contributor(s):: Xufeng Wang, Geoffrey Coram, Colin McAndrew
Verilog-A lint and pretty printer created by NEEDS
A Comparative Study of nanoHUB Tools for the Simulation of Carbon-based FETs
31 Aug 2015 | | Contributor(s):: Jose M. de la Rosa
This work compares the different tools available in nanoHUB for the electrical simulation of carbon- based field-effect transistors made up of either carbon nanotubes (CNTs) or graphene. ...
ab initio simulations with ORCA
28 Jul 2015 | | Contributor(s):: nicolas onofrio, Alejandro Strachan
ab initio and density functional theory calculations dedicated to molecular systems
DFT Material Properties Simulator
21 Jul 2015 | | Contributor(s):: Gustavo Javier, Usama Kamran, David M Guzman, Alejandro Strachan, Peilin Liao
Compute electronic and mechanical properties of materials from DFT calculations with 1-Click
Variation-Aware Nanosystem Design Kit (NDK)
30 Jul 2015 | | Contributor(s):: Gage Hills
Carbon nanotube field-effect transistors (CNFETs) are promising candidates for building energy-efficient digital systems at highly scaled technology nodes. However, carbon nanotubes (CNTs) are inherently subject to variations that reduce circuit yield, increase susceptibility to noise, and...