Tags: nanoelectronics


Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

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  1. ECE 695A Lecture 31: Collecting and Plotting Data

    15 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:Origin of data, Field Acceleration vs. Statistical InferenceNonparametric informationPreparing data for projection: Hazen formula Preparing data for projection: Kaplan formulaConclusion

  2. ECE 695A Lecture 31A: Appendix - Bootstrap Method Introduction

    15 Apr 2013 | | Contributor(s):: Muhammad Alam

  3. Exciton Dynamics Simulator

    31 Dec 2012 | | Contributor(s):: Michael Heiber

    Simulates the exciton dynamics in organic photovolatic devices

  4. ECE 695A Lecture 30R: Review Questions

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:What is the difference between extrinsic vs. intrinsic breakdown?Does gas dielectric have extrinsic breakdown? Why or why not?What does ESD damage and the plasma damage to thin oxides?Can you explain the physical meaning of infant mortality ? How does it relate to yield of semiconductor...

  5. ECE 695A Lecture 30: Breakdown in Dielectrics with Defects

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:IntroductionTheory of pre-existing defects: Thin oxidesTheory of pre-existing defects: thick oxidesConclusions

  6. ECE 695A Lecture 29R: Review Questions

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Mention a few differences between thick and thin oxide breakdown.Is breakdown in thick oxides contact dominated? Can I use AHI theory here?How does the Paschen’s cascade initiate?What does it mean to have a fractal dimension of 1.7 for 2D breakdown? Why does the number suggest...

  7. ECE 695A Lecture 29A: Appendix - Dimension of a Surface

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

  8. ECE 695A Lecture 28: Circuit Implications of Dielectric Breakdown

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:Part 1 - Understanding Post-BD FET behaviorBD position determinationHard and Soft BD in FETsDistinguishing leakage and intrinsic FET parameters shiftsPart 2 - Impact of breakdown on digital circuit operationBD in ring oscillatorBDinSR AMcellTiming, BD into soft node

  9. ECE 695A Lecture 29: Breakdown of Thick Dielectrics

    08 Apr 2013 | | Contributor(s):: Muhammad Alam

    Outline:IntroductionSpatial and temporal dynamics during breakdownBreakdown in bulk oxides: puzzleConclusions 

  10. ECE 695A Lecture 27R: Review Questions

    29 Mar 2013 | | Contributor(s):: Muhammad Alam

  11. ECE 695A Lecture 26-1: Statistics of Soft Breakdown via Methods of Markov Chains

    28 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Spatial vs. Temporal correlationTheory of correlated Dielectric BreakdownExcess leakage as a signature of correlated BDConclusions

  12. ECE 695A Lecture 26-2: Statistics of Soft Breakdown (Breakdown Position correlation)

    28 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Position and time correlation of BD spotHow to determine the position of the BD SpotPosition correlation in BD spotsWhy is localization so weak?Conclusions

  13. ECE 695A Lecture 26R: Review Questions

    28 Mar 2013 | | Contributor(s):: Muhammad Alam

  14. Carbon-Based Nanoswitch Logic

    21 Mar 2013 | | Contributor(s):: Stephen A. Campbell

    This talk discusses a rather surprising possibility: the use of carbon-based materials such as carbon nanotubes and grapheneto make nanomechanical switches with at least an order of magnitude lower power dissipation than the low power CMOS options and performance between the various CMOS...

  15. ECE 595E Lecture 23: Electronic Bandstructures

    04 Mar 2013 | | Contributor(s):: Peter Bermel

    Outline:3D Lattice TypesFull 3D Photonic Bandgap StructuresYablonoviteWoodpileInverse OpalsRod-Hole 3D PhCs

  16. ECE 695A Lecture 25R: Review Questions

    19 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Explain why percolation resistance is area independent?Why is the physical origin of the distribution of percolation resistance?How would the ratio of hard and soft breakdown change with an auxiliary parallel capacitor in constant voltage stress? Explain. What is the evidence...

  17. Empirical Tight-binding Parameterization of SmSe in the sp3d5f7s* model

    26 Mar 2013 | | Contributor(s):: Zhengping Jiang, Marcelo Kuroda, Yaohua Tan, Dennis M. Newns, Michael Povolotskyi, Timothy Boykin, Tillmann Christoph Kubis, Gerhard Klimeck, Glenn J. Martyna

    The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and the ETB parameters.The Piezoelectronic Transistor (PET) has been proposed as a post-CMOS device for fast, low-power...

  18. Showkat Hassan Mir


  19. ECE 695A Lecture 24: Statistics of Oxide Breakdown - Cell percolation model

    19 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Observations: Failure times are statistically distributedModels of Failure Distribution: Extrinsic vs. percolationPercolation theory of multiple BreakdownTDDB lifetime projectionConclusions

  20. ECE 695A Lecture 24R: Review Questions

    19 Mar 2013 | | Contributor(s):: Muhammad Alam