Tags: nanoelectronics

Description

Progress in technology has brought microelectronics to the nanoscale, but nanoelectronics is not yet a well-defined engineering discipline with a coherent, experimentally verified, theoretical framework. The NCN has a vision for a new, 'bottom-up' approach to electronics, which involves: understanding electronic conduction at the atomistic level; formulating new simulation techniques; developing a new generation of software tools; and bringing this new understanding and perspective into the classroom. We address problems in atomistic phenomena, quantum transport, percolative transport in inhomogeneous media, reliability, and the connection of nanoelectronics to new problems such as biology, medicine, and energy. We work closely with experimentalists to understand nanoscale phenomena and to explore new device concepts. In the course of this work, we produce open source software tools and educational resources that we share with the community through the nanoHUB.

This page is a starting point for nanoHUB users interested in nanoelectronics. It lists key resources developed by the NCN Nanoelectronics team. The nanoHUB contains many more resources for nanoelectronics, and they can be located with the nanoHUB search function. To find all nanoelectronics resources, search for 'nanoelectronics.' To find those contributed by the NCN nanoelectronics team, search for 'NCNnanoelectronics.' More information on Nanoelectronics can be found here.

All Categories (281-300 of 2039)

  1. ECE 695A Lecture 26R: Review Questions

    28 Mar 2013 | | Contributor(s):: Muhammad Alam

  2. Carbon-Based Nanoswitch Logic

    28 Mar 2013 | | Contributor(s):: Stephen A. Campbell

    This talk discusses a rather surprising possibility: the use of carbon-based materials such as carbon nanotubes and grapheneto make nanomechanical switches with at least an order of magnitude lower power dissipation than the low power CMOS options and performance between the various CMOS...

  3. ECE 595E Lecture 23: Electronic Bandstructures

    27 Mar 2013 | | Contributor(s):: Peter Bermel

    Outline:3D Lattice TypesFull 3D Photonic Bandgap StructuresYablonoviteWoodpileInverse OpalsRod-Hole 3D PhCs

  4. ECE 695A Lecture 25R: Review Questions

    27 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Explain why percolation resistance is area independent?Why is the physical origin of the distribution of percolation resistance?How would the ratio of hard and soft breakdown change with an auxiliary parallel capacitor in constant voltage stress? Explain. What is the evidence...

  5. Empirical Tight-binding Parameterization of SmSe in the sp3d5f7s* model

    26 Mar 2013 | | Contributor(s):: Zhengping Jiang, Marcelo Kuroda, Yaohua Tan, Dennis M. Newns, Michael Povolotskyi, Timothy Boykin, Tillmann Christoph Kubis, Gerhard Klimeck, Glenn J. Martyna

    The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and the ETB parameters.The Piezoelectronic Transistor (PET) has been proposed as a post-CMOS device for fast, low-power...

  6. Showkat Hassan Mir

    http://nanohub.org/members/79530

  7. ECE 695A Lecture 24: Statistics of Oxide Breakdown - Cell percolation model

    21 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Observations: Failure times are statistically distributedModels of Failure Distribution: Extrinsic vs. percolationPercolation theory of multiple BreakdownTDDB lifetime projectionConclusions

  8. ECE 695A Lecture 24R: Review Questions

    21 Mar 2013 | | Contributor(s):: Muhammad Alam

  9. ECE 695A Lecture 25: Theory of Soft and Hard Breakdown

    21 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Oxide breakdowns need not be catastrophicObservations about soft vs. hard breakdownA simple model for soft/hard breakdownInterpretation of experimentsConclusions

  10. ECE 595E Lecture 21: 3D Bandstructures

    19 Mar 2013 | | Contributor(s):: Peter Bermel

    Outline:Recap from MondayBandstructure Symmetries2D Photonic BandstructuresPeriodic Dielectric WaveguidesPhotonic Crystal Slabs

  11. ECE 595E Lecture 24: Electronic Bandstructure Simulation Tools

    19 Mar 2013 | | Contributor(s):: Peter Bermel

    Outline:Electronic bandstructure labBasic PrinciplesInput InterfaceExemplary OutputsDensity functional theory (DFT)DFT in Quantum ESPRESSO

  12. ECE 695A Lecture 23R: Review Questions

    19 Mar 2013 | | Contributor(s):: Muhammad Alam

  13. ECE 695A Lecture 22R: Review Questions

    19 Mar 2013 | | Contributor(s):: Muhammad Alam

  14. ECE 695A Lecture 23: Characterization of Defects Responsible for TDDB

    19 Mar 2013 | | Contributor(s):: Muhammad Alam

  15. NEMO5 Latest Version Source

    19 Mar 2013 | | Contributor(s):: James Fonseca, Michael Povolotskyi, Tillmann Christoph Kubis, Jean Michel D Sellier

    Revision 24185 uploaded on December 16th, 2016.Revision 23455 updated on August 8th, 2016 Revision 21229 updated on Sept 2, 2015. Use this if you want to build NEMO5 from source. 

  16. ECE 695A Lecture 21R: Review Questions

    12 Mar 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:What is the name of the failure distribution that we expect for thin oxides?For thin oxides, is PMOS or NMOS more of a concern in modern transistors?What is DBIE? When does it occur? Can the transistor be still functional ?In what ways is TDDB compare with NBTI and HCI...

  17. ECE 595E Lecture 22: Full 3D Bandgaps

    06 Mar 2013 | | Contributor(s):: Peter Bermel

    Outline:Recap from Wednesday3D Lattice TypesFull 3D Photonic Bandgap StructuresYablonoviteWoodpileInverse OpalsRod-Hole 3D PhCs

  18. ECE 595E Lecture 20: Bandstructure Concepts

    06 Mar 2013 | | Contributor(s):: Peter Bermel

    Outline:Recap from FridayBandstructure Problem FormulationBloch’s TheoremReciprocal Lattice SpaceNumerical Solutions1D crystal2D triangular lattice3D diamond lattice

  19. ECE 695A Lecture 21: Introduction to Dielectric Breakdown

    05 Mar 2013 | | Contributor(s):: Muhammad Alam

    Outline:Basic features of gate dielectric breakdownPhysical characterization of breakdown spotTime-dependent defect generationConclusions

  20. ECE 695A Lecture 22: Voltage Dependence of Thin Dielectric Breakdown

    05 Mar 2013 | | Contributor(s):: Muhammad Alam