problem in nanomos

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I am facing problem while simulating in new version of nanomos. If I select the device SOI MOSFET or spinFET it shows only input and output deck after simualtion. No results are available.

https://nanohub.org/answers/question/835

nanoMos 3,5 compare models

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how can we compare the 3 models (Green's funktion,semiclassical and Drift..) in nanoMos 3,5 and the graphs for first subband,electron density and velocity.What are diffrent between the 3 models.Why …

https://nanohub.org/answers/question/674

Scattering in NEGF: Made simple

09 Nov 2009 | Publications | Contributor(s): Dmitri Nikonov, Himadri Pal, George Bourianoff

Formalism for describing electron-phonon scattering, surface scattering, and spin relaxation is dervied for the Keldysh non-equilibrium Green's functions (NEGF) method. Approximation useful for …

https://nanohub.org/resources/7772

NanoMOS 3.5 (online Verison)

Open | Responses: 1

When I used NanoMOS 3.5 on nanoHub, I got the same answers when I set Ambient Temperature at 200 & 300 K (the other parameters are as default). Similar situation happened when setting Caughey and …

https://nanohub.org/answers/question/326

silicon thickness

Open | Responses: 2

hi, according to chapter 2 of ren's thesis (fig.2.8), with decrease of silicon thickness, increase of on-current is observed but simulation results of nanomos shows opposite behaviors.why?

https://nanohub.org/answers/question/283

mosfet thickness

Closed | Responses: 0

hi, according to chapter 2 of ren's thesis (fig.2.8), with decrease of mosfet thickness, increase of on-current is observed but simulation results of nanomos of nanomos shows opposite behaviors.why?

https://nanohub.org/answers/question/282

poisson equation in si/oxid interface

Open | Responses: 1

hi! i have a question about discontinuty of epsilon in sioxid interface. it seems in this position, epsilon is (epsilon_oxid+epsilon_si)/2 according to thesis of ren but he uses another mesh in …

https://nanohub.org/answers/question/211

poisson equation in sioxid interface

Closed | Responses: 0

hi! i have a question about discontinuty of epsilon in sioxid interface. it seems in this position, epsilon is epsilon_oxid+epsilon_si according to thesis of ren but he uses another mesh in this …

https://nanohub.org/answers/question/210

What is the double mosfte width(W) in nanoMos simulation?

Open | Responses: 2

How much is the width(W) of double gate mosfet in nanoMos simulatin and how can I change it? Best regards

https://nanohub.org/answers/question/207

double gate mosfet width (W) in nanoMos

Open | Responses: 2

https://nanohub.org/answers/question/206