Tags: nanoMos

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  1. nanoMOS program

    Closed | Responses: 0

    Does the nanoMOS tool work only on browsers? I was under the windows simulation now, I found that the simulation time is very long, I installed Linux systems, but found that the tool can not...


  2. current.m generate a variable 'ans'

    Closed | Responses: 0

    Whenever I am running current.m or current_dd.m I am getting a variable of 100x1 dimension 'ans' as the output.

    What is the significance of this?



  3. Plotting drain current vs drain voltage

    Closed | Responses: 0

    % ID-VD CHARACTERISTICS (A/m), SAVED TO "output_dir/IV.dat"
    % -------------------------------------------------
    if (Nd_step>=1 & Ng_step==0)http://nanohub.org/answers/question/1905

  4. different materials giving the same current in nanoMOS

    Closed | Responses: 0

    I have assigned a class project for my class where the students have to study different materials (Si, GaAs, etc) in a dual-gate structure using the nanoMOS toolkit. However, both Si and GaAs as...


  5. problem in nanomos

    Closed | Responses: 0

    I am facing problem while simulating in new version of nanomos. If I select the device SOI MOSFET or spinFET it shows only input and output deck after simualtion. No results are available.


  6. nanoMos 3,5 compare models

    Closed | Responses: 0

    how can we compare the 3 models (Green’s funktion,semiclassical and Drift..) in nanoMos 3,5 and the graphs for first subband,electron density and velocity.What are diffrent between the 3...


  7. Scattering in NEGF: Made simple

    09 Nov 2009 | | Contributor(s):: Dmitri Nikonov, Himadri Pal, George Bourianoff

    Formalism for describing electron-phonon scattering, surface scattering, and spin relaxation is dervied for the Keldysh non-equilibrium Green's functions (NEGF) method. Approximation useful for efficient numerical solution are described. The specific case of the nanoMOS simulator is...

  8. NanoMOS 3.5 (online Verison)

    Open | Responses: 1

    When I used NanoMOS 3.5 on nanoHub, I got the same answers when I set Ambient Temperature at 200 & 300 K...


  9. silicon thickness

    Open | Responses: 2

    hi, according to chapter 2 of ren’s thesis (fig.2.8), with decrease of silicon thickness, increase of on-current is observed but simulation results of nanomos shows opposite...


  10. poisson equation in si/oxid interface

    Open | Responses: 1

    hi! i have a question about discontinuty of epsilon in sioxid interface. it seems in this position, epsilon is (epsilon_oxid+epsilon_si)/2 according to thesis of ren but he uses another mesh in...


  11. What is the double mosfte width(W) in nanoMos simulation?

    Open | Responses: 2

    How much is the width(W) of double gate mosfet in nanoMos simulatin and how can I change it? Best regards


  12. double gate mosfet width (W) in nanoMos

    Open | Responses: 2