Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Closed | Responses: 0
Does the nanoMOS tool work only on browsers? I was under the windows simulation now, I found that the simulation time is very long, I installed Linux systems, but found that the tool can not...
current.m generate a variable 'ans'
Whenever I am running current.m or current_dd.m I am getting a variable of 100x1 dimension 'ans' as the output.
What is the significance of this?
Plotting drain current vs drain voltage
% ID-VD CHARACTERISTICS (A/m), SAVED TO "output_dir/IV.dat"
if (Nd_step>=1 & Ng_step==0)http://nanohub.org/answers/question/1905
different materials giving the same current in nanoMOS
I have assigned a class project for my class where the students have to study different materials (Si, GaAs, etc) in a dual-gate structure using the nanoMOS toolkit. However, both Si and GaAs...
problem in nanomos
I am facing problem while simulating in new version of nanomos. If I select the device SOI MOSFET or spinFET it shows only input and output deck after simualtion. No results are available.
nanoMos 3,5 compare models
how can we compare the 3 models (Green’s funktion,semiclassical and Drift..) in nanoMos 3,5 and the graphs for first subband,electron density and velocity.What are diffrent between the 3...
Scattering in NEGF: Made simple
09 Nov 2009 | Papers | Contributor(s): Dmitri Nikonov, Himadri Pal, George Bourianoff
Formalism for describing electron-phonon scattering, surface scattering, and spin relaxation is dervied for the Keldysh non-equilibrium Green's functions (NEGF) method. Approximation useful for...
NanoMOS 3.5 (online Verison)
Open | Responses: 1
When I used NanoMOS 3.5 on nanoHub, I got the same answers when I set Ambient Temperature at 200 & 300 K...
Open | Responses: 2
hi, according to chapter 2 of ren’s thesis (fig.2.8), with decrease of silicon thickness, increase of on-current is observed but simulation results of nanomos shows opposite...
poisson equation in si/oxid interface
i have a question about discontinuty of epsilon in sioxid interface.
it seems in this position, epsilon is (epsilon_oxid+epsilon_si)/2 according to thesis of ren but he uses another mesh in...
What is the double mosfte width(W) in nanoMos simulation?
How much is the width(W) of double gate mosfet in nanoMos simulatin and how can I change it?
double gate mosfet width (W) in nanoMos