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ECE 612 Lecture 18A: CMOS Process Steps
out of 5 stars
12 Nov 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Unit Process Operations,2) Process Variations.
ECE 612 Lecture 18B: CMOS Process Flow
18 Nov 2008 | | Contributor(s):: Mark Lundstrom
For a basic, CMOS process flow for an STI (shallow trench isolation process), see: http://www.rit.edu/~lffeee/AdvCmos2003.pdf.This lecture is a condensed version of the more complete presentation (listed above) by Dr. Fuller.
ECE 612 Lecture 26: Heterostructure FETs
10 Dec 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Introduction,2) Heterojunction review,3) Modulation doping,4) I-V characteristics,5) Device Structure / Materials,6) Summary.
ECE 612 Lecture 7: Scattering Theory of the MOSFET I
08 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.
ECE 612 Lecture 8: Scattering Theory of the MOSFET II
Multiple Transfers of Single-Walled Carbon Nanotubes on Silicon Wafers
20 Mar 2009 | | Contributor(s):: Alan Salvador Teran
Single-walled carbon nanotubes (SWCNTs) have many applications, including high speed transistor devices (see Figure 1). SWCNTs are grown on single-crystal quartz wafers and then transferred onto silicon wafers by a process that involves gold evaporation and thermal release tape. When they are...