Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

All Categories (1-20 of 433)

  1. SIDDHARTH KRISHNAN

    http://nanohub.org/members/190793

  2. Adrian Suteu

    Source Graphene is the first based Romanian company focused on producing and supplying graphene oxide in water dispersion. Source Graphene has the capacity to obtain high, cost effective amounts...

    http://nanohub.org/members/175145

  3. Ahmed M Abdelgawad

    http://nanohub.org/members/169075

  4. Amogh Vithalkar

    http://nanohub.org/members/168737

  5. Al-Amin Sheikh

    http://nanohub.org/members/160887

  6. Akhil Devdas Prabhu

    http://nanohub.org/members/160853

  7. Chowdhury, Prodipto

    http://nanohub.org/members/152180

  8. A Short Overview of the NEEDS Initiative

    06 Jun 2016 | | Contributor(s):: Mark Lundstrom

    The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.

  9. George James.T (Dr.)

    http://nanohub.org/members/138016

  10. Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence

    25 Nov 2015 | | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada

    IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...

  11. Inter-band Tunnel Transistors: Opportunities and Challenges

    30 Oct 2015 | | Contributor(s):: Suman Datta

    In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.

  12. Negative Capacitance Ferroelectric Transistors: A Promising Steep Slope Device Candidate?

    30 Oct 2015 | | Contributor(s):: Suman Datta

    In this talk, we will review progress in non-perovskite ALD based ferroelectric dielectrics which have strong implication for VLSI compatible negative capacitance Ferroelectric FETs.

  13. Sunjeet Jena

    http://nanohub.org/members/130889

  14. The Deployment and Evolution of the First NEEDS- Certified Model — MIT Virtual Source Compact Model for Silicon Nanotransistors

    04 Oct 2015 | | Contributor(s):: Shaloo Rakheja

    In my talk, I will walk you through the fundamental steps involved in developing compact models, using the MVS model as an example. From the “lessons learned” in the process of MVS release in 2013 and its subsequent updates, I will provide a checklist of good practices to adopt while...

  15. The Ultimate Scaling Limit - A Deterministic Single Atom Transistor

    10 Mar 2015 | | Contributor(s):: Gerhard Klimeck

    A talk by Dr. Gerhard Klimeck, Director of nanoHUB.org, Purdue University, Founder of NEMOco, LLC @ the University of Michigan.

  16. Sheikh Aamir Ahsan

    http://nanohub.org/members/102143

  17. RF Solid-State Vibrating Transistors

    15 Feb 2014 | | Contributor(s):: Dana Weinstein

    In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of IBM’s SOI CMOS process, without any post-processing or packaging will be described. ...

  18. ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances

    25 Jan 2014 | | Contributor(s):: Mark Lundstrom

    Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.

  19. ECE 612 Lecture 9: Subthreshold Conduction

    25 Jan 2014 | | Contributor(s):: Mark Lundstrom

    Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006 teaching.

  20. Tunnel FETs - Device Physics and Realizations

    10 Jul 2013 | | Contributor(s):: Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.