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Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

Resources (201-220 of 412)

  1. ECE 612 Lecture 4: Polysilicon Gates/QM Effects

    12 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review, 2) Workfunctionof poly gates, 3) CV with poly depletion, 4) Quantum mechanics and VT, 5) Quantum mechanics and C, 6) Summary.

    http://nanohub.org/resources/5364

  2. ECE 612 Introductory Lecture

    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/5340

  3. Lecture 3A: The Ballistic MOSFET

    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new...

    http://nanohub.org/resources/5309

  4. Lecture 3B: The Ballistic MOSFET

    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

    http://nanohub.org/resources/5310

  5. Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up

    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our...

    http://nanohub.org/resources/5207

  6. ECE 612 Lecture 3: MOS Capacitors

    09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Short review, 2) Gate voltage / surface potential relation, 3) The flatbandvoltage, 4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

    http://nanohub.org/resources/5363

  7. ECE 612 Lecture 2: 1D MOS Electrostatics II

    09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review, 2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.

    http://nanohub.org/resources/5362

  8. ECE 612 Lecture 1: 1D MOS Electrostatics I

    09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review of some fundamentals, 2) Identify next steps.

    http://nanohub.org/resources/5341

  9. Lecture 2: Elementary Theory of the Nanoscale MOSFET

    08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent...

    http://nanohub.org/resources/5308

  10. Lecture 4: Scattering in Nanoscale MOSFETs

    08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective...

    http://nanohub.org/resources/5311

  11. Lecture 5: Application to State-of-the-Art FETs

    08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the...

    http://nanohub.org/resources/5312

  12. Introduction: Physics of Nanoscale MOSFETs

    26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    NCN@Purdue Summer School 2008 National Science Fondation Intel Corporation NCN@Purdue Summer School 2008 National Science Fondation Intel Corporation

    http://nanohub.org/resources/5317

  13. Lecture 1: Review of MOSFET Fundamentals

    26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and...

    http://nanohub.org/resources/5307

  14. Lecture 1A: What and where is the resistance?

    20 Aug 2008 | Online Presentations | Contributor(s): Supriyo Datta

    Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at...

    http://nanohub.org/resources/5211

  15. Lecture 1B: What and where is the resistance?

    20 Aug 2008 | Online Presentations | Contributor(s): Supriyo Datta

    Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at...

    http://nanohub.org/resources/5248

  16. Nano Carbon: From ballistic transistors to atomic drumheads

    14 May 2008 | Online Presentations | Contributor(s): Paul L. McEuen

    Carbon takes many forms, from precious diamonds to lowly graphite. Surprisingly, it is the latter that is the most prized by nano physicists. Graphene, a single layer of graphite, can serve as an...

    http://nanohub.org/resources/4398

  17. Examples for QuaMC 2D particle-based device Simulator Tool

    10 May 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck

    We provide three examples that demonstrate the full capabilities of QuaMC 2D for alternative device technologies.

    http://nanohub.org/resources/4543

  18. What Promises do Nanotubes and Nanowires Hold for Future Nanoelectronics Applications?

    18 Feb 2008 | Online Presentations | Contributor(s): Joerg Appenzeller

    Various low-dimensional materials are currently explored for future electronics applications. The common ground for all these structures is that the surface related impact can no longer be...

    http://nanohub.org/resources/4059

  19. Finite Size Scaling and Quantum Criticality

    02 Jan 2008 | Online Presentations | Contributor(s): Sabre Kais

    In statistical mechanics, the finite size scaling method provides a systematic way to extrapolate information about criticality obtained from a finite system to the thermodynamic limit. For...

    http://nanohub.org/resources/3526

  20. Can numerical “experiments” INSPIRE physical experiments?

    20 Dec 2007 | Online Presentations | Contributor(s): Supriyo Datta

    This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of...

    http://nanohub.org/resources/3716

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.