
Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally...
http://nanohub.org/resources/5314

Lecture 6: Quantum Transport in Nanoscale FETs
12 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture...
http://nanohub.org/resources/5313

ECE 612 Lecture 4: Polysilicon Gates/QM Effects
12 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review, 2) Workfunctionof poly gates,
3) CV with poly depletion,
4) Quantum mechanics and VT,
5) Quantum mechanics and C,
6) Summary.
http://nanohub.org/resources/5364

ECE 612 Introductory Lecture
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/5340

Lecture 3A: The Ballistic MOSFET
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new...
http://nanohub.org/resources/5309

Lecture 3B: The Ballistic MOSFET
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
http://nanohub.org/resources/5310

Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our...
http://nanohub.org/resources/5207

ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Short review,
2) Gate voltage / surface potential relation,
3) The flatbandvoltage,
4) MOS capacitance vs. voltage,
5) Gate voltage and inversion layer charge.
http://nanohub.org/resources/5363

ECE 612 Lecture 2: 1D MOS Electrostatics II
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review,
2) ‘Exact’ solution (bulk),
3) Approximate solution (bulk),
4) Approximate solution (ultrathin body),
5) Summary.
http://nanohub.org/resources/5362

ECE 612 Lecture 1: 1D MOS Electrostatics I
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review of some fundamentals,
2) Identify next steps.
http://nanohub.org/resources/5341

Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent...
http://nanohub.org/resources/5308

Lecture 4: Scattering in Nanoscale MOSFETs
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
No MOSFET is ever fully ballistic  there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective...
http://nanohub.org/resources/5311

Lecture 5: Application to StateoftheArt FETs
08 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the...
http://nanohub.org/resources/5312

Introduction: Physics of Nanoscale MOSFETs
26 Aug 2008  Online Presentations  Contributor(s): Mark Lundstrom
NCN@Purdue Summer School 2008
National Science Fondation
Intel Corporation
NCN@Purdue Summer School 2008
National Science Fondation
Intel Corporation
http://nanohub.org/resources/5317

Lecture 1: Review of MOSFET Fundamentals
26 Aug 2008  Online Presentations  Contributor(s): Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (driftdiffusion) approach and...
http://nanohub.org/resources/5307

Lecture 1A: What and where is the resistance?
20 Aug 2008  Online Presentations  Contributor(s): Supriyo Datta
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at...
http://nanohub.org/resources/5211

Lecture 1B: What and where is the resistance?
20 Aug 2008  Online Presentations  Contributor(s): Supriyo Datta
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at...
http://nanohub.org/resources/5248

Nano Carbon: From ballistic transistors to atomic drumheads
14 May 2008  Online Presentations  Contributor(s): Paul L. McEuen
Carbon takes many forms, from precious diamonds to lowly graphite. Surprisingly, it is the latter that is the most prized by nano physicists. Graphene, a single layer of graphite, can serve as an...
http://nanohub.org/resources/4398

Examples for QuaMC 2D particlebased device Simulator Tool
12 May 2008  Online Presentations  Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
We provide three examples that demonstrate the full capabilities of QuaMC 2D for alternative device technologies.
http://nanohub.org/resources/4543

What Promises do Nanotubes and Nanowires Hold for Future Nanoelectronics Applications?
18 Feb 2008  Online Presentations  Contributor(s): Joerg Appenzeller
Various lowdimensional materials are currently explored for future electronics applications. The common ground
for all these structures is that the surface related impact can no longer be...
http://nanohub.org/resources/4059