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The Long and Short of Pick-up Stick Transistors: A Promising Technology for Nano- and Macro-Electronics
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11 Apr 2006 | | Contributor(s):: Muhammad A. Alam
In recent years, there has been enormous interest in the emerging field of large-area macro-electronics, and fabricating thin-film transistors on flexible substrates. This talk will cover recent work in developing a comprehensive theoretical framework to describe the performance of these...
Thermal Microsystems for On-Chip Thermal Engineering
04 Apr 2006 | | Contributor(s):: Suresh V. Garimella
Electro-thermal co-design at the micro- and nano-scales is critical for achieving desired performance and reliability in microelectronic circuits. Emerging thermal microsystems technologies for this application area are discussed, with specific examples including a novel micromechanical...
Mark Ratner Interview on Nanotechnology
23 Mar 2006 | | Contributor(s):: Mark Ratner, Krishna Madhavan
Nanotechnology interview with Krishna Madhavan.
Molecular Transport Structures: Elastic Scattering, Vibronic Effects and Beyond
13 Feb 2006 | | Contributor(s):: Mark Ratner, Abraham Nitzan,
Current experimental efforts are clarifying quite beautifully the nature of charge transport in so-called molecular junctions, in which a single molecule provides the channel for current flow between two electrodes. The theoretical modeling of such structures is challenging, because of the...
Making the Tiniest and Fastest Transistor using Atomic Layer Deposition (ALD)
13 Feb 2006 | | Contributor(s):: peide ye
Atomic layer deposition (ALD) is an emerging nanotechnology enables the deposit of ultrathin films, one atomic layer by one atomic layer. ALD provides a powerful, new capability to grow or regrow nanoscale ultrathin films of metals, semiconductors and insulators. This presentation introduces ALD...
A Gentle Introduction to Nanotechnology and Nanoscience
13 Feb 2006 | | Contributor(s):: Mark Ratner
While the Greek root nano just means dwarf, the nanoscale has become a giant focus of contemporary science and technology. We will examine the fundamental issues underlying the excitement involved in nanoscale research - what, why and how. Specific topics include assembly, properties,...
A Primer on Semiconductor Device Simulation
23 Jan 2006 | | Contributor(s):: Mark Lundstrom
Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation tool intelligently, one must know what's "under the hood." This talk is a tutorial introduction designed for someone using semiconductor device simulation...
Nano-Scale Device Simulations Using PROPHET-Part II: PDE Systems
20 Jan 2006 | | Contributor(s):: yang liu,
Part II uses examples toillustrate how to build user-defined PDE systems in PROPHET.
Nano-Scale Device Simulations Using PROPHET-Part I: Basics
Part I covers the basics of PROPHET,including the set-up of simulation structures and parameters based onpre-defined PDE systems.
Nano-Scale Device Simulations Using PROPHET
These two lectures are aimed to give a practical guide to the use of ageneral device simulator (PROPHET) available on nanoHUB. PROPHETis a partial differential equation (PDE) solver that offers usersthe flexibility of integrating new models and equations for theirnano-device simulations. The...
Optimization of Transistor Design for Carbon Nanotubes
20 Jan 2006 | | Contributor(s):: Jing Guo
We have developed a self-consistent atomistic simulator for CNTFETs.Using the simulator, we show that a recently reported high-performanceCNTFET delivers a near ballistic on-current. The off-state, however, issignificantly degraded because the CNTFET operates like anon-conventional Schottky...
Quantum Corrections for Monte Carlo Simulation
05 Jan 2006 | | Contributor(s):: Umberto Ravaioli
Size quantization is an important effect in modern scaled devices. Due to the cost and limitations of available full quantum approaches, it is appealing to extend semi-classical simulators by adding corrections for size quantization. Monte Carlo particle simulators are good candidates, because a...
Bandstructure in Nanoelectronics
01 Nov 2005 | | Contributor(s):: Gerhard Klimeck
This presentation will highlight, for nanoelectronic device examples, how the effective mass approximation breaks down and why the quantum mechanical nature of the atomically resolved material needs to be included in the device modeling. Atomistic bandstructure effects in resonant tunneling...
An Electrical Engineering Perspective on Molecular Electronics
26 Oct 2005 | | Contributor(s):: Mark Lundstrom
After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths that are less than 50 nm long, and billion transistor logic chips have arrived. Moore's Law continues, but the end of...
Simple Theory of the Ballistic MOSFET
11 Oct 2005 | | Contributor(s):: Mark Lundstrom
Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I will describe a simple analysis of the ballistic MOSFET. No MOSFET is truly ballistic, but approaching this...
Semiconductor Interfaces at the Nanoscale
17 Oct 2005 | | Contributor(s):: David Janes
The trend in downscaling of electronic devices and the need to add functionalities such as sensing and nonvolatile memory to existing circuitry dictate that new approaches be developed for device structures and fabrication technologies. Various device technologies are being investigated,...
Plasmonic Nanophotonics: Coupling Light to Nanostructure via Plasmons
03 Oct 2005 | | Contributor(s):: Vladimir M. Shalaev
The photon is the ultimate unit of information because it packages data in a signal of zero mass and has unmatched speed. The power of light is driving the photonicrevolution, and information technologies, which were formerly entirely electronic, are increasingly enlisting light to communicate...
On the Reliability of Micro-Electronic Devices: An Introductory Lecture on Negative Bias Temperature Instability
28 Sep 2005 | | Contributor(s):: Muhammad A. Alam
In 1930s Bell Labs scientists chose to focus on Siand Ge, rather than better known semiconductors like Ag2S and Cu2S, mostly because of their reliable performance. Their choice was rewarded with the invention of bipolar transistors several years later. In 1960s, scientists at Fairchild worked...
Modeling and Simulation of Sub-Micron Thermal Transport
26 Sep 2005 | | Contributor(s):: Jayathi Murthy
In recent years, there has been increasing interest in understanding thermal phenomena at the sub-micron scale. Applications include the thermal performance of microelectronic devices, thermo-electric energy conversion, ultra-fast laser machining and many others. It is now accepted that...
Moore's Law Forever?
13 Jul 2005 | | Contributor(s):: Mark Lundstrom
This talk covers the big technological changes in the 20th and 21st century that were correctly predicted by Gordon Moore in 1965. Moore's Law states that the number of transistors on a silicon chip doubles every technology generation. In 1960s terms that meant every 12 months and currently this...