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ECE 659 Lecture 8: Scattering Theory of Transport
03 Feb 2009 | | Contributor(s):: Supriyo Datta
ECE 659 Lecture 7: Hall Effect II
ECE 659 Lecture 6: Hall Effect I
ECE 659 Lecture 5: Where is the Resistance?
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27 Jan 2009 | | Contributor(s):: Supriyo Datta
ECE 659 Lecture 4: Landauer Model
ECE 659 Lecture 1: Introduction
21 Jan 2009 | | Contributor(s):: Supriyo Datta
ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport
ECE 659 Lecture 3: Mobility
ECE 612 Lecture 27: Heterojunction Bipolar Transistors
15 Dec 2008 | | Contributor(s):: Mark Lundstrom
ECE 612 Lecture 25: SOI Electrostatics
08 Dec 2008 | | Contributor(s):: Mark Lundstrom
Outline:1. Introduction,2. General solution, 3. VTF vs. VGB,4. Subthreshold slope,5. Double gate (DG) SOI,6. Recap,7. Discussion,8. Summary.
ECE 612 Lecture 22: CMOS Circuit Essentials
24 Nov 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) The CMOS inverter,2) Speed,3) Power,4) Circuit performance,5) Metrics,6) Limits.This lecture is an overview of CMOS circuits. For a more detailed presentation, the following lectures from the Fall 2006 teaching of this course should be viewed:Lecture 24: CMOS Circuits, Part I (Fall...
ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
14 Nov 2008 | | Contributor(s):: Muhammad A. Alam
Guest lecturer: Muhammad A. Alam.
ECE 612 Lecture 19: Device Variability
14 Nov 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Sources of variability,2) Random dopantfluctuations (RDF),3) Line edge roughness (LER),4) Impact on design.
Lecture 2: Thresholds, Islands, and Fractals
04 Nov 2008 | | Contributor(s):: Muhammad A. Alam
Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via elementary examples. These three concepts will form the theoretical foundation for discussion in...
Lecture 1: Percolation in Electronic Devices
Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity of these phenomena however, the concepts percolation theory provides a broad theoretical framework...
ECE 612 Lecture 17: Gate Resistance and Interconnects
03 Nov 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Gate Resistance,2) Interconnects,3) ITRS,4) Summary.
ECE 612 Lecture 16: MOSFET Leakage
31 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) MOSFET leakage components,2) Band to band tunneling,3) Gate-induced drain leakage,4) Gate leakage,5) Scaling and ITRS,6) Summary.
ECE 612 Lecture 15: Series Resistance (and effective channel length)
29 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Effect on I-V,2) Series resistance components,3) Metal-semiconductor resistance,4) Other series resistance components,5) Discussion,6) Effective Channel Length,7) Summary.
ECE 612 Lecture 14: VT Engineering
28 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) VT Specification,2) Uniform Doping,3) Delta-function doping, xC = 0,4) Delta-function doping, xC > 0,5) Stepwise uniform,6) Integral solution.The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of how non-uniform doping profiles affect...
ECE 612 Lecture 12: 2D Electrostatics
Outline:1) Consequences of 2D electrostatics,2) 2D Poisson equation,3) Charge sharing model,4) Barrier lowering,5) 2D capacitor model,6) Geometric screening length,7) Discussion,8) Summary.