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Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

Resources (181-200 of 412)

  1. ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport

    21 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta

    http://nanohub.org/resources/6148

  2. ECE 659 Lecture 3: Mobility

    21 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta

    http://nanohub.org/resources/6151

  3. ECE 612 Lecture 27: Heterojunction Bipolar Transistors

    15 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/6047

  4. ECE 612 Lecture 25: SOI Electrostatics

    08 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1. Introduction, 2. General solution, 3. VTF vs. VGB, 4. Subthreshold slope, 5. Double gate (DG) SOI, 6. Recap, 7. Discussion, 8. Summary.

    http://nanohub.org/resources/6014

  5. ECE 612 Lecture 22: CMOS Circuit Essentials

    24 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) The CMOS inverter, 2) Speed, 3) Power, 4) Circuit performance, 5) Metrics, 6) Limits. This lecture is an overview of CMOS circuits. For a more detailed presentation, the...

    http://nanohub.org/resources/5927

  6. ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET

    14 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    Guest lecturer: Muhammad A. Alam.

    http://nanohub.org/resources/5861

  7. ECE 612 Lecture 19: Device Variability

    14 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Sources of variability, 2) Random dopantfluctuations (RDF), 3) Line edge roughness (LER), 4) Impact on design.

    http://nanohub.org/resources/5856

  8. Lecture 2: Thresholds, Islands, and Fractals

    04 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via...

    http://nanohub.org/resources/5698

  9. Lecture 1: Percolation in Electronic Devices

    04 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the...

    http://nanohub.org/resources/5697

  10. ECE 612 Lecture 17: Gate Resistance and Interconnects

    03 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Gate Resistance, 2) Interconnects, 3) ITRS, 4) Summary.

    http://nanohub.org/resources/5700

  11. ECE 612 Lecture 16: MOSFET Leakage

    31 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) MOSFET leakage components, 2) Band to band tunneling, 3) Gate-induced drain leakage, 4) Gate leakage, 5) Scaling and ITRS, 6) Summary.

    http://nanohub.org/resources/5688

  12. ECE 612 Lecture 15: Series Resistance (and effective channel length)

    29 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Effect on I-V, 2) Series resistance components, 3) Metal-semiconductor resistance, 4) Other series resistance components, 5) Discussion, 6) Effective Channel Length, 7) Summary.

    http://nanohub.org/resources/5675

  13. ECE 612 Lecture 14: VT Engineering

    28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) VT Specification, 2) Uniform Doping, 3) Delta-function doping, xC = 0, 4) Delta-function doping, xC > 0, 5) Stepwise uniform, 6) Integral solution. The doping profiles in...

    http://nanohub.org/resources/5670

  14. ECE 612 Lecture 12: 2D Electrostatics

    28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Consequences of 2D electrostatics, 2) 2D Poisson equation, 3) Charge sharing model, 4) Barrier lowering, 5) 2D capacitor model, 6) Geometric screening length, 7) Discussion, 8)...

    http://nanohub.org/resources/5624

  15. ECE 612 Lecture 11: Effective Mobility

    20 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review of mobility, 2) “Effective”mobility, 3) Physics of the effective mobility, 4) Measuring effective mobility, 5) Discussion, 6) Summary.

    http://nanohub.org/resources/5619

  16. ECE 612 Lecture 6: MOSFET IV: Velocity saturation

    07 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review, 2) Bulk charge theory (approximate), 3) Velocity saturation theory, 4) Summary.

    http://nanohub.org/resources/5366

  17. ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge

    07 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Introduction, 2) Square law theory, 3) PN junction effects on MOSFETs, 4) Bulk charge theory (exact), 5) Summary.

    http://nanohub.org/resources/5365

  18. Introductory Comments

    29 Sep 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5502

  19. Lecture 7: Connection to the Bottom Up Approach

    23 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally...

    http://nanohub.org/resources/5314

  20. Lecture 6: Quantum Transport in Nanoscale FETs

    12 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture...

    http://nanohub.org/resources/5313

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