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Lecture 1B: What and where is the resistance?
out of 5 stars
20 Aug 2008 | | Contributor(s):: Supriyo Datta
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which electrons hop in and out of the two contacts, labeled source and drain. This model is used to explain...
Nano Carbon: From ballistic transistors to atomic drumheads
14 May 2008 | | Contributor(s):: Paul L. McEuen
Carbon takes many forms, from precious diamonds to lowly graphite. Surprisingly, it is the latter that is the most prized by nano physicists. Graphene, a single layer of graphite, can serve as an impenetrable membrane a single atom thick. Rolled up into a nanometer-diameter cylinder--a carbon...
Examples for QuaMC 2D particle-based device Simulator Tool
10 May 2008 | | Contributor(s):: Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
We provide three examples that demonstrate the full capabilities of QuaMC 2D for alternative device technologies.
What Promises do Nanotubes and Nanowires Hold for Future Nanoelectronics Applications?
18 Feb 2008 | | Contributor(s):: Joerg Appenzeller
Various low-dimensional materials are currently explored for future electronics applications. The common ground for all these structures is that the surface related impact can no longer be ignored – the common approach applied to predict properties of bulk-type three-dimensional (3D) materials....
Can numerical “experiments” INSPIRE physical experiments?
20 Dec 2007 | | Contributor(s):: Supriyo Datta
This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.
Computational Modeling: Experience from my Bell Lab Days
19 Dec 2007 | | Contributor(s):: Muhammad A. Alam
MCW07 Modeling Molecule-Assisted Transport in Nanotransistors
06 Nov 2007 | | Contributor(s):: Kamil Walczak
Molecular electronics faces many problems in practical device implementation, due to difficulties with fabrication and gate-ability. In these devices, molecules act as the main conducting channel. One could imagine alternate device structures where molecules act as quantum dots rather than...
Electronics from the Bottom Up: an educational initiative on 21st century electronics
17 Aug 2007 | | Contributor(s):: Mark Lundstrom, Supriyo Datta, Muhammad A. Alam
In the 1960’s, a group of leaders from industry and academia, recognized that the age of vacuum tubes was ending and that engineers would have to be educated differently if they were to realize the opportunities that the new field of microelectronics presented. The Semiconductor Electronics...
The Nano-MOSFET: A brief introduction
17 Aug 2007 | | Contributor(s):: Mark Lundstrom
MOSFET channel lengths are now well below 100nm, and getting smaller, but MOSFETs are still modeled and understood much as they were 30 years ago. Seminal work in the 1960’s laid the foundation for our understanding of the MOSFET, but traditional approaches are based on concepts that lose...
A Tutorial for Nanoelectronics Simulation Tools
03 Jul 2007 | | Contributor(s):: James K Fodor, Jing Guo
This learning module introduces nanoHUB users to some of the available simulators. The simulators discussed are FETToy, nanoMOS, Schred, CNTbands, and QDot Lab. For each simulator, a brief introduction to the simulator is presented, followed by voiced presentations featuring the simulator in...
BNC Annual Research Symposium: Nanoelectronics and Semiconductor Devices
23 Apr 2007 | | Contributor(s):: David Janes
This presentation is part of a collection of presentations describing the projects, people, and capabilities enhanced by research performed in the Birck Center, and a look at plans for the upcoming year.
ECE 612 Lecture 27: RF CMOS
23 Jan 2007 | | Contributor(s):: Mark Lundstrom
ECE 612 Lecture 30: UTB SOI Electrostatics
08 Jan 2007 | | Contributor(s):: Mark Lundstrom
ECE 612 Lecture 26: CMOS Limits
ECE 612 Lecture 22: CMOS Process Steps
04 Jan 2007 | | Contributor(s):: Mark Lundstrom
ECE 612 Lecture 34: Heterostructure FETs
ECE 612 Lecture 33: Heterojunction Bipolar Transistors
11 Dec 2006 | | Contributor(s):: Mark Lundstrom
ECE 612 Lecture 32: Heterojunction Diodes
08 Dec 2006 | | Contributor(s):: Mark Lundstrom
ECE 612 Lecture 31: Heterostructure Fundamentals
ECE 612 Lecture 29: SOI Electrostatics
04 Dec 2006 | | Contributor(s):: Mark Lundstrom