ECE 612 Lecture 27: Heterojunction Bipolar Transistors

15 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

https://nanohub.org/resources/6047

ECE 612 Lecture 25: SOI Electrostatics

08 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1. Introduction, 2. General solution, 3. VTF vs. VGB, 4. Subthreshold slope, 5. Double gate (DG) SOI, 6. Recap, 7. Discussion, 8. Summary.

https://nanohub.org/resources/6014

ECE 612 Lecture 22: CMOS Circuit Essentials

24 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) The CMOS inverter, 2) Speed, 3) Power, 4) Circuit performance, 5) Metrics, 6) Limits. This lecture is an overview of CMOS circuits. For a more detailed presentation, the …

https://nanohub.org/resources/5927

ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET

14 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

Guest lecturer: Muhammad A. Alam.

https://nanohub.org/resources/5861

ECE 612 Lecture 19: Device Variability

14 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Sources of variability, 2) Random dopantfluctuations (RDF), 3) Line edge roughness (LER), 4) Impact on design.

https://nanohub.org/resources/5856

Lecture 2: Thresholds, Islands, and Fractals

04 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via …

https://nanohub.org/resources/5698

Lecture 1: Percolation in Electronic Devices

04 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity …

https://nanohub.org/resources/5697

ECE 612 Lecture 17: Gate Resistance and Interconnects

03 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Gate Resistance, 2) Interconnects, 3) ITRS, 4) Summary.

https://nanohub.org/resources/5700

ECE 612 Lecture 16: MOSFET Leakage

31 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) MOSFET leakage components, 2) Band to band tunneling, 3) Gate-induced drain leakage, 4) Gate leakage, 5) Scaling and ITRS, 6) Summary.

https://nanohub.org/resources/5688

ECE 612 Lecture 15: Series Resistance (and effective channel length)

29 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Effect on I-V, 2) Series resistance components, 3) Metal-semiconductor resistance, 4) Other series resistance components, 5) Discussion, 6) Effective Channel Length, 7) Summary.

https://nanohub.org/resources/5675

ECE 612 Lecture 14: VT Engineering

28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) VT Specification, 2) Uniform Doping, 3) Delta-function doping, xC = 0, 4) Delta-function doping, xC > 0, 5) Stepwise uniform, 6) Integral solution. The doping profiles in modern …

https://nanohub.org/resources/5670

ECE 612 Lecture 12: 2D Electrostatics

28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Consequences of 2D electrostatics, 2) 2D Poisson equation, 3) Charge sharing model, 4) Barrier lowering, 5) 2D capacitor model, 6) Geometric screening length, 7) Discussion, 8) …

https://nanohub.org/resources/5624

ECE 612 Lecture 11: Effective Mobility

20 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Review of mobility, 2) “Effective”mobility, 3) Physics of the effective mobility, 4) Measuring effective mobility, 5) Discussion, 6) Summary.

https://nanohub.org/resources/5619

ECE 612 Lecture 6: MOSFET IV: Velocity saturation

07 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Review, 2) Bulk charge theory (approximate), 3) Velocity saturation theory, 4) Summary.

https://nanohub.org/resources/5366

ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge

07 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Introduction, 2) Square law theory, 3) PN junction effects on MOSFETs, 4) Bulk charge theory (exact), 5) Summary.

https://nanohub.org/resources/5365

Introductory Comments

29 Sep 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

https://nanohub.org/resources/5502

Lecture 7: Connection to the Bottom Up Approach

23 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally …

https://nanohub.org/resources/5314

Lecture 6: Quantum Transport in Nanoscale FETs

12 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture …

https://nanohub.org/resources/5313

ECE 612 Lecture 4: Polysilicon Gates/QM Effects

12 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

Outline: 1) Review, 2) Workfunctionof poly gates, 3) CV with poly depletion, 4) Quantum mechanics and VT, 5) Quantum mechanics and C, 6) Summary.

https://nanohub.org/resources/5364

ECE 612 Introductory Lecture

10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

https://nanohub.org/resources/5340