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A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

Online Presentations (1-20 of 307)

  1. RF Solid-State Vibrating Transistors

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    15 Feb 2014 | Online Presentations | Contributor(s): Dana Weinstein

    In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of …

    http://nanohub.org/resources/20335

  2. ECE 612 Lecture 9: Subthreshold Conduction

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    25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom

    Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006 teaching.

    http://nanohub.org/resources/5617

  3. ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances

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    25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom

    Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.

    http://nanohub.org/resources/5618

  4. Tunnel FETs - Device Physics and Realizations

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    10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source …

    http://nanohub.org/resources/18723

  5. ECE 695A Lecture 18: DC-IV and Charge Pumping Methods

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    25 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Recall: Properties of Interface Defects Flux-based method 1: Direct Current-Voltage method Flux-based method 2: Charge pumping method Conclusions

    http://nanohub.org/resources/17023

  6. ECE 695A Lecture 16: Review Questions

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    22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Question What is the difference between hot atom dissociation vs. cold atom dissociation?. Many experiments are reported at 77K and 295K. Why these temperatures?. Why is there such a …

    http://nanohub.org/resources/17014

  7. ECE 695A Lecture 17: Subtheshold and Idlin Methods

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    21 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    …

    http://nanohub.org/resources/16965

  8. ECE 695A Lecture 15R: Review Questions

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    20 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI? What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments. …

    http://nanohub.org/resources/16933

  9. ECE 695A Lecture 14a: Voltage Dependent HCI I

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal Scaling Conclusion …

    http://nanohub.org/resources/16895

  10. ECE 695A Lecture 14b: Voltage Dependent HCI II

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal Scaling Conclusion …

    http://nanohub.org/resources/16896

  11. ECE 695A Lecture 14R: Review Questions

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions Why is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current? What are the three methods of HCI …

    http://nanohub.org/resources/16897

  12. ECE 695A Lecture 15: Off-state HCI Degradation

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: ON vs. OFF State HCI Degradation Origin of hot carriers at off-state SiH vs. SiO – who is getting broken? Voltage acceleration factors by scaling Conclusions

    http://nanohub.org/resources/16919

  13. ECE 695A Lecture 16: Temperature Dependence of HCI

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Empirical observations regarding HCI Theory of bond dissociation: MVE vs. RRK Hot carrier dissociation of SiH bonds Hot carrier dissociation of SiO bonds Conclusions

    http://nanohub.org/resources/16920

  14. ECE 695A Lecture 13: Introductory Lecture on HCI Degradation

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and features of HCI Degradation Phenomenological observations Origin of Hot carriers Theory of Si-H Bond Dissociation Theory of Si-O Bond Dissociation Conclusions

    http://nanohub.org/resources/16887

  15. ECE 695A Lecture 13R: Review Questions

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    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Both SiH and SiO are involved in HCI degradation. Give two evidences. Why doesn’t HCI occur during NBTI stress condition? I suggested that HCI curve can shifted …

    http://nanohub.org/resources/16888

  16. ECE 695A Lecture 5R: Review Questions

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    12 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: What is the difference between coordination and composition? Is periodicity essential for a defect-free structure? Why can’t the amorphous material have arbitrary ring …

    http://nanohub.org/resources/16788

  17. ECE 695A Lecture 11R: Review Questions

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    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Does Einstein relationship hold for activated diffusion? People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you support …

    http://nanohub.org/resources/16786

  18. ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation

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    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    …

    http://nanohub.org/resources/16787

  19. ECE 695A Lecture 12: Field Dependence of NBTI

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    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background: Field dependent degradation Components of field-dependent dissociation: Interpreting experiments Voltage acceleration factors Conclusion

    http://nanohub.org/resources/16789

  20. ECE 695A Lecture 12R: Review Questions

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    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength. How does the dissociation process …

    http://nanohub.org/resources/16790

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