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A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

Online Presentations (1-20 of 307)

  1. RF Solid-State Vibrating Transistors

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    15 Feb 2014 | Online Presentations | Contributor(s): Dana Weinstein

    In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of...

    http://nanohub.org/resources/20335

  2. ECE 612 Lecture 9: Subthreshold Conduction

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    25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom

    Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006...

    http://nanohub.org/resources/5617

  3. ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances

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    25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom

    Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006...

    http://nanohub.org/resources/5618

  4. Tunnel FETs - Device Physics and Realizations

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    10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...

    http://nanohub.org/resources/18723

  5. ECE 695A Lecture 18: DC-IV and Charge Pumping Methods

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    25 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline:

    • Recall: Properties of Interface Defects
    • Flux-based method 1: Direct Current-Voltage method
    • Flux-based method 2: Charge pumping...

      http://nanohub.org/resources/17023

    • ECE 695A Lecture 16: Review Questions

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      22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

      Review Question

      1. What is the difference between hot atom dissociation vs. cold atom dissociation?.
      2. Many experiments are reported at 77K and 295K. Why these...

        http://nanohub.org/resources/17014

      3. ECE 695A Lecture 17: Subtheshold and Idlin Methods

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        21 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

        http://nanohub.org/resources/16965

      4. ECE 695A Lecture 15R: Review Questions

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        20 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

        Review Questions:

        1. Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI?
        2. What type of bond dissociation dominated DeMOS degradation? Provide two...

          http://nanohub.org/resources/16933

        3. ECE 695A Lecture 14a: Voltage Dependent HCI I

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          19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

          Outline:

          • Background and Empirical Observations
          • Theory of Hot Carriers: Hydrodynamic Model
          • Theory of Hot Carriers: Monte Carlo Model
          • Theory of Hot Carriers:...

            http://nanohub.org/resources/16895

          • ECE 695A Lecture 14b: Voltage Dependent HCI II

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            19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

            Outline:

            • Background and Empirical Observations
            • Theory of Hot Carriers: Hydrodynamic Model
            • Theory of Hot Carriers: Monte Carlo Model
            • Theory of Hot Carriers:...

              http://nanohub.org/resources/16896

            • ECE 695A Lecture 14R: Review Questions

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              19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

              Review Questions

              1. Why is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current?
              2. What are the...

                http://nanohub.org/resources/16897

              3. ECE 695A Lecture 15: Off-state HCI Degradation

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                19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

                Outline:

                • ON vs. OFF State HCI Degradation
                • Origin of hot carriers at off-state
                • SiH vs. SiO – who is getting broken? Voltage acceleration factors by...

                  http://nanohub.org/resources/16919

                • ECE 695A Lecture 16: Temperature Dependence of HCI

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                  19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

                  Outline:

                  • Empirical observations regarding HCI
                  • Theory of bond dissociation: MVE vs. RRK
                  • Hot carrier dissociation of SiH bonds
                  • Hot carrier dissociation of...

                    http://nanohub.org/resources/16920

                  • ECE 695A Lecture 13: Introductory Lecture on HCI Degradation

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                    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

                    Outline:

                    • Background and features of HCI Degradation
                      • Phenomenological observations
                      • Origin of Hot carriers
                    • Theory of Si-H Bond...

                      http://nanohub.org/resources/16887

                    • ECE 695A Lecture 13R: Review Questions

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                      19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

                      Review Questions:

                      1. Both SiH and SiO are involved in HCI degradation. Give two evidences.
                      2. Why doesn’t HCI occur during NBTI stress condition?
                      3. I suggested that HCI...

                        http://nanohub.org/resources/16888

                      4. ECE 695A Lecture 5R: Review Questions

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                        12 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

                        Review Questions:

                        1. What is the difference between coordination and composition?
                        2. Is periodicity essential for a defect-free structure?
                        3. Why can’t the amorphous...

                          http://nanohub.org/resources/16788

                        4. ECE 695A Lecture 11R: Review Questions

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                          08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

                          Review Questions:

                          1. Does Einstein relationship hold for activated diffusion?
                          2. People argue that the forward dissociation and reverse passivation have similar activation...

                            http://nanohub.org/resources/16786

                          3. ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation

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                            08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

                            http://nanohub.org/resources/16787

                          4. ECE 695A Lecture 12: Field Dependence of NBTI

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                            08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

                            Outline:

                            • Background: Field dependent degradation
                            • Components of field-dependent dissociation:
                            • Interpreting experiments
                            • Voltage acceleration...

                              http://nanohub.org/resources/16789

                            • ECE 695A Lecture 12R: Review Questions

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                              08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

                              Review Questions:

                              1. Explain the difference between local field and global field within an oxide.
                              2. Explain physically why electric field decreases bond strength.
                              3. How...

                                http://nanohub.org/resources/16790

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