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A Short Overview of the NEEDS Initiative
06 Jun 2016 | Online Presentations | Contributor(s): Mark Lundstrom
The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.
http://nanohub.org/resources/24336
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The Ultimate Scaling Limit - A Deterministic Single Atom Transistor
10 Mar 2015 | Online Presentations | Contributor(s): Gerhard Klimeck
A talk by Dr. Gerhard Klimeck, Director of nanoHUB.org, Purdue University, Founder of NEMOco, LLC @ the University of Michigan.
http://nanohub.org/resources/22031
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RF Solid-State Vibrating Transistors
15 Feb 2014 | Online Presentations | Contributor(s): Dana Weinstein
In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of...
http://nanohub.org/resources/20335
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ECE 612 Lecture 9: Subthreshold Conduction
25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom
Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006 teaching.
http://nanohub.org/resources/5617
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ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances
25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom
Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.
http://nanohub.org/resources/5618
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Tunnel FETs - Device Physics and Realizations
10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...
http://nanohub.org/resources/18723
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ECE 695A Lecture 18: DC-IV and Charge Pumping Methods
25 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline:
Recall: Properties of Interface Defects
Flux-based method 1: Direct Current-Voltage method
Flux-based method 2: Charge pumping method
Conclusions
http://nanohub.org/resources/17023
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ECE 695A Lecture 16: Review Questions
22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review Question
What is the difference between hot atom dissociation vs. cold atom dissociation?.
Many experiments are reported at 77K and 295K. Why these temperatures?.
Why is there such...
http://nanohub.org/resources/17014
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ECE 695A Lecture 17: Subthreshold and Idlin Methods
21 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
http://nanohub.org/resources/16965
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ECE 695A Lecture 15R: Review Questions
20 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review Questions:
Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI?
What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments....
http://nanohub.org/resources/16933
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ECE 695A Lecture 14a: Voltage Dependent HCI I
19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline:
Background and Empirical Observations
Theory of Hot Carriers: Hydrodynamic Model
Theory of Hot Carriers: Monte Carlo Model
Theory of Hot Carriers: Universal...
http://nanohub.org/resources/16895
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ECE 695A Lecture 14b: Voltage Dependent HCI II
19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline:
Background and Empirical Observations
Theory of Hot Carriers: Hydrodynamic Model
Theory of Hot Carriers: Monte Carlo Model
Theory of Hot Carriers: Universal...
http://nanohub.org/resources/16896
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ECE 695A Lecture 14R: Review Questions
19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review Questions
Why is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current?
What are the three methods of...
http://nanohub.org/resources/16897
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ECE 695A Lecture 15: Off-state HCI Degradation
19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline:
ON vs. OFF State HCI Degradation
Origin of hot carriers at off-state
SiH vs. SiO – who is getting broken? Voltage acceleration factors by scaling
Conclusions
http://nanohub.org/resources/16919
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ECE 695A Lecture 16: Temperature Dependence of HCI
19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline:
Empirical observations regarding HCI
Theory of bond dissociation: MVE vs. RRK
Hot carrier dissociation of SiH bonds
Hot carrier dissociation of SiO bonds
Conclusions
http://nanohub.org/resources/16920
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ECE 695A Lecture 13: Introductory Lecture on HCI Degradation
19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Outline:
Background and features of HCI Degradation
Phenomenological observations
Origin of Hot carriers
Theory of Si-H Bond Dissociation
Theory of Si-O Bond...
http://nanohub.org/resources/16887
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ECE 695A Lecture 13R: Review Questions
19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review Questions:
Both SiH and SiO are involved in HCI degradation. Give two evidences.
Why doesn’t HCI occur during NBTI stress condition?
I suggested that HCI curve can shifted...
http://nanohub.org/resources/16888
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ECE 695A Lecture 5R: Review Questions
12 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review Questions:
What is the difference between coordination and composition?
Is periodicity essential for a defect-free structure?
Why can’t the amorphous material have arbitrary ring...
http://nanohub.org/resources/16788
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ECE 695A Lecture 11R: Review Questions
08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review Questions:
Does Einstein relationship hold for activated diffusion?
People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you...
http://nanohub.org/resources/16786
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ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation
08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
http://nanohub.org/resources/16787