
Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices
28 Jun 2013   Contributor(s):: Siyu Koswatta
Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of presentday electronics. Semiconducting CNTs have large carrier mobilities...

Modeling Quantum Transport in Nanoscale Transistors
28 Jun 2013   Contributor(s):: Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...

Physics and Simulation of QuasiBallistic Transport in Nanoscale Transistors
28 Jun 2013   Contributor(s):: JungHoon Rhew
The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...

Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013   Contributor(s):: Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...

TwoDimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013   Contributor(s):: Carl R. Huster
For many years now, solid state device simulators have been based on the driftdiffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...

Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013   Contributor(s):: Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collisiondominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...

Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013   Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

Theory and characterization of random defect formation and its implication in variability of nanoscale transistors
30 Sep 2011   Contributor(s):: Ahmad Ehteshamul Islam
Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of the basic building blocks in almost all the modern electronic devices. However, nanoscale dimensions...

Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006   Contributor(s):: ramesh venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new...

Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006   Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of highκ gate...

Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006   Contributor(s):: Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer aided...

Modeling of Nanoscale Devices
19 Oct 2006   Contributor(s):: M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introductionto the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale electronic devices with quantum mechanicaland atomistic effects. We first review the basis for the...

A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006   Contributor(s):: Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a twodimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the nonequilibrium Green’s function equations selfconsistently with Poisson’s equation and treats the effect of...

Simulating Quantum Transport in Nanoscale Transistors: Real versus ModeSpace Approaches
28 Sep 2006   Contributor(s):: Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, twodimensional quantum mechanical sim ulation scheme for modeling electron transport in thin body, fully depleted, nchannel, silicon oninsulator transistors in the ballistic limit. The proposed simulation scheme, which solves the...

Device Physics and Simulation of Silicon Nanowire Transistors
28 Sep 2006   Contributor(s):: Jing Wang
As the conventional silicon metaloxidesemiconductor fieldeffect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

Exploring New Channel Materials for Nanoscale CMOS
21 May 2006   Contributor(s):: Anisur Rahman
The improved transport properties of new channel materials, such as Ge and IIIV semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices.Novel process techniques, such as ALD, highk dielectrics, and...

Device Physics and Simulation of Silicon Nanowire Transistors
20 May 2006   Contributor(s):: Jing Wang
As the conventional silicon metaloxidesemiconductor fieldeffect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

Notes on the Ballistic MOSFET
08 Oct 2005   Contributor(s):: Mark Lundstrom
When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the socalled meanfreepath, λ) is much shorter than the device. When...

Theory of Ballistic Nanotransistors
27 Nov 2002   Contributor(s):: Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic fieldeffect transistors. When twodimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to...