Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

Papers (1-19 of 19)

  1. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    28 Jun 2013 | Papers | Contributor(s): Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices...

    http://nanohub.org/resources/18707

  2. Modeling Quantum Transport in Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore,...

    http://nanohub.org/resources/18744

  3. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed the channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...

    http://nanohub.org/resources/18747

  4. Nanoscale MOSFETS: Physics, Simulation and Design

    28 Jun 2013 | Papers | Contributor(s): Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...

    http://nanohub.org/resources/18763

  5. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    28 Jun 2013 | Papers | Contributor(s): Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive...

    http://nanohub.org/resources/18765

  6. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

    28 Jun 2013 | Papers | Contributor(s): Kausar Banoo

    Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators...

    http://nanohub.org/resources/18767

  7. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | Papers | Contributor(s): Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...

    http://nanohub.org/resources/18769

  8. Theory and characterization of random defect formation and its implication in variability of nanoscale transistors

    30 Sep 2011 | Papers | Contributor(s): Ahmad Ehteshamul Islam

    Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of...

    http://nanohub.org/resources/12182

  9. Modeling Quantum Transport in Nanoscale Transistors

    30 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics....

    http://nanohub.org/resources/1930

  10. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    30 Oct 2006 | Papers | Contributor(s): Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias...

    http://nanohub.org/resources/1928

  11. Nanoscale MOSFETs: Physics, Simulation and Design

    26 Oct 2006 | Papers | Contributor(s): Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...

    http://nanohub.org/resources/1917

  12. Modeling of Nanoscale Devices

    19 Oct 2006 | Papers | Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov

    We aim to provide engineers with an introduction to the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale...

    http://nanohub.org/resources/1902

  13. A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors

    19 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

    In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the...

    http://nanohub.org/resources/1900

  14. Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches

    28 Sep 2006 | Papers | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic

    In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon-...

    http://nanohub.org/resources/1835

  15. Device Physics and Simulation of Silicon Nanowire Transistors

    28 Sep 2006 | Papers | Contributor(s): Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them,...

    http://nanohub.org/resources/1833

  16. Exploring New Channel Materials for Nanoscale CMOS

    21 May 2006 | Papers | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...

    http://nanohub.org/resources/1315

  17. Device Physics and Simulation of Silicon Nanowire Transistors

    20 May 2006 | Papers | Contributor(s): Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...

    http://nanohub.org/resources/1313

  18. Notes on the Ballistic MOSFET

    21 Nov 2005 | Papers | Contributor(s): Mark Lundstrom

    When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average...

    http://nanohub.org/resources/489

  19. Theory of Ballistic Nanotransistors

    27 Nov 2002 | Papers | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom

    Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the...

    http://nanohub.org/resources/122