
Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices
28 Jun 2013  Papers  Contributor(s): Siyu Koswatta
Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices...
http://nanohub.org/resources/18707

Modeling Quantum Transport in Nanoscale Transistors
28 Jun 2013  Papers  Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore,...
http://nanohub.org/resources/18744

Physics and Simulation of QuasiBallistic Transport in Nanoscale Transistors
28 Jun 2013  Papers  Contributor(s): JungHoon Rhew
The formidable progress in microelectronics in the last decade has pushed the
channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...
http://nanohub.org/resources/18747

Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013  Papers  Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...
http://nanohub.org/resources/18763

TwoDimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013  Papers  Contributor(s): Carl R. Huster
For many years now, solid state device simulators have been based on the driftdiffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive...
http://nanohub.org/resources/18765

Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013  Papers  Contributor(s): Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collisiondominated transport equations used in current device simulators...
http://nanohub.org/resources/18767

Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013  Papers  Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...
http://nanohub.org/resources/18769

Theory and characterization of random defect formation and its implication in variability of nanoscale transistors
30 Sep 2011  Papers  Contributor(s): Ahmad Ehteshamul Islam
Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of...
http://nanohub.org/resources/12182

Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006  Papers  Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan
tum mechanical effects begin to manifest themselves and affect important device
performance metrics....
http://nanohub.org/resources/1930

Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006  Papers  Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube
electronic devices and in identifying potential applications has occurred. In a nanotube,
low bias...
http://nanohub.org/resources/1928

Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006  Papers  Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale
transistors at the quantum level. The principle topics addressed in this report are 1) an
implementation of...
http://nanohub.org/resources/1917

Modeling of Nanoscale Devices
19 Oct 2006  Papers  Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introduction
to the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale...
http://nanohub.org/resources/1902

A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006  Papers  Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a twodimensional quantum mechanical simulation scheme to study
the effect of channel access geometries on device performance. This simulation scheme solves the...
http://nanohub.org/resources/1900

Simulating Quantum Transport in Nanoscale Transistors: Real versus ModeSpace Approaches
28 Sep 2006  Papers  Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, twodimensional quantum mechanical sim
ulation scheme for modeling electron transport in thin body, fully depleted, nchannel, silicon...
http://nanohub.org/resources/1835

Device Physics and Simulation of Silicon Nanowire Transistors
28 Sep 2006  Papers  Contributor(s): Jing Wang
As the conventional silicon metaloxidesemiconductor fieldeffect transistor
(MOSFET) approaches its scaling limits, many novel device structures are being
extensively explored. Among them,...
http://nanohub.org/resources/1833

Exploring New Channel Materials for Nanoscale CMOS
21 May 2006  Papers  Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and IIIV semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
http://nanohub.org/resources/1315

Device Physics and Simulation of Silicon Nanowire Transistors
20 May 2006  Papers  Contributor(s): Jing Wang
As the conventional silicon metaloxidesemiconductor fieldeffect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...
http://nanohub.org/resources/1313

Notes on the Ballistic MOSFET
21 Nov 2005  Papers  Contributor(s): Mark Lundstrom
When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter
frequently from ionized impurities, phonons, surface roughness, etc. so that the average...
http://nanohub.org/resources/489

Theory of Ballistic Nanotransistors
27 Nov 2002  Papers  Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic fieldeffect transistors. When twodimensional electrostatic effects are small, (and when the...
http://nanohub.org/resources/122