Theory and characterization of random defect formation and its implication in variability of nanoscale transistors

30 Sep 2011 | Publications | Contributor(s): Ahmad Ehteshamul Islam

Over the last 50 years, carrier transport has been the central research topic in the semiconductor area. The outcome was a dramatic improvement in the performance of a transistor, which is one of the …

https://nanohub.org/resources/12182

Modeling Quantum Transport in Nanoscale Transistors

30 Oct 2006 | Publications | Contributor(s): Ramesh Venugopal

As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, …

https://nanohub.org/resources/1930

Carbon Nanotube Electronics: Modeling, Physics, and Applications

30 Oct 2006 | Publications | Contributor(s): Jing Guo

In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport …

https://nanohub.org/resources/1928

Nanoscale MOSFETs: Physics, Simulation and Design

26 Oct 2006 | Publications | Contributor(s): Zhibin Ren

This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of …

https://nanohub.org/resources/1917

Modeling of Nanoscale Devices

19 Oct 2006 | Publications | Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov

We aim to provide engineers with an introduction to the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale …

https://nanohub.org/resources/1902

A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors

19 Oct 2006 | Publications | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the …

https://nanohub.org/resources/1900

Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches

28 Sep 2006 | Publications | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic

In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon- …

https://nanohub.org/resources/1835

Device Physics and Simulation of Silicon Nanowire Transistors

28 Sep 2006 | Publications | Contributor(s): Jing Wang

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the …

https://nanohub.org/resources/1833

Exploring New Channel Materials for Nanoscale CMOS

21 May 2006 | Publications | Contributor(s): Anisur Rahman

The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the …

https://nanohub.org/resources/1315

Device Physics and Simulation of Silicon Nanowire Transistors

20 May 2006 | Publications | Contributor(s): Jing Wang

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the …

https://nanohub.org/resources/1313

Notes on the Ballistic MOSFET

08 Oct 2005 | Publications | Contributor(s): Mark Lundstrom

When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance …

https://nanohub.org/resources/489

Theory of Ballistic Nanotransistors

27 Nov 2002 | Publications | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom

Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the …

https://nanohub.org/resources/122