
SchottkyBarrier CNFET
16 Mar 2007   Contributor(s):: Arash Hazeghi, Tejas K, H.S. Philip Wong
Simulate Carbon Nanotube field Effect transistor with Schottky Barriers

QuaMC2D
13 Mar 2006   Contributor(s):: Shaikh S. Ahmed, Dragica Vasileska
Quantumcorrected MonteCarlo electron transport simulator for twodimensional MOSFET devices.

NanoCMOS
06 Feb 2007   Contributor(s):: wei zhao, yu cao
Predictive model files for future transistor technologies.

ECE 612 Lecture 27: RF CMOS
23 Jan 2007   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 30: UTB SOI Electrostatics
08 Jan 2007   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 26: CMOS Limits
08 Jan 2007   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 22: CMOS Process Steps
04 Jan 2007   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 34: Heterostructure FETs
04 Jan 2007   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 33: Heterojunction Bipolar Transistors
11 Dec 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 32: Heterojunction Diodes
08 Dec 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 31: Heterostructure Fundamentals
08 Dec 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 29: SOI Electrostatics
04 Dec 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 28: Overview of SOI Technology
30 Nov 2006   Contributor(s):: Mark Lundstrom

Design in the Nanometer Regime: Process Variation
28 Nov 2006   Contributor(s):: Kaushik Roy
Scaling of technology over the last few decades has produced an exponential growth in computing power of integrated circuits and an unprecedented number of transistors integrated into a single. However, scaling is facing several problems — severe short channel effects, exponential increase in...

Design of CMOS Circuits in the Nanometer Regime: Leakage Tolerance
28 Nov 2006   Contributor(s):: Kaushik Roy
The scaling of technology has produced exponential growth in transistor development and computing power in the last few decades, but scaling still presents several challenges. These two lectures will cover device aware CMOS design to address power, reliability, and process variations in scaled...

MOSCNT: code for carbon nanotube transistor simulation
14 Nov 2006   Contributor(s):: Siyu Koswatta, Jing Guo, Dmitri Nikonov
Ballistic transport in carbon nanotube metaloxidesemiconductor fieldeffect transistors (CNTMOSFETs) is simulated using the Nonequilibrium Green’s function formalism. A cylindrical transistor geometry with wrappedaround gate and doped source/drain regions are assumed. It should be noted...

recursive algorithm for NEGF in Matlab
13 Nov 2006   Contributor(s):: Dmitri Nikonov, Siyu Koswatta
This ziparchive contains two Matlab functions for the recursive solution of the partial matrix inversion and partial 3matrix multiplication used in the nonequilibrium Green’s function (NEGF) method.recuresealg3d.m works for 3diagonal matricesrecuresealgblock3d.m works for 3blockdiagonal...

ECE 612 Lecture 25: CMOS Circuits, Part I I
06 Nov 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 23: CMOS Process Flow
06 Nov 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 24: CMOS Circuits, Part I
05 Nov 2006   Contributor(s):: Mark Lundstrom