
ECE 612 Lecture 30: UTB SOI Electrostatics
08 Jan 2007  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/2245

ECE 612 Lecture 26: CMOS Limits
08 Jan 2007  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/2248

ECE 612 Lecture 22: CMOS Process Steps
04 Jan 2007  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/2151

ECE 612 Lecture 34: Heterostructure FETs
04 Jan 2007  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/2146

ECE 612 Lecture 33: Heterojunction Bipolar Transistors
11 Dec 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/2097

ECE 612 Lecture 32: Heterojunction Diodes
08 Dec 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/2085

ECE 612 Lecture 31: Heterostructure Fundamentals
08 Dec 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/2082

ECE 612 Lecture 29: SOI Electrostatics
04 Dec 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/2045

ECE 612 Lecture 28: Overview of SOI Technology
30 Nov 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/2036

Design in the Nanometer Regime: Process Variation
28 Nov 2006  Online Presentations  Contributor(s): Kaushik Roy
Scaling of technology over the last few decades has produced an exponential growth in computing power of integrated circuits and an unprecedented number of transistors integrated into a single....
http://nanohub.org/resources/2018

Design of CMOS Circuits in the Nanometer Regime: Leakage Tolerance
28 Nov 2006  Online Presentations  Contributor(s): Kaushik Roy
The scaling of technology has produced exponential growth in transistor development and computing power in the last few decades, but scaling still presents several challenges. These two lectures...
http://nanohub.org/resources/2023

MOSCNT: code for carbon nanotube transistor simulation
14 Nov 2006  Downloads  Contributor(s): Siyu Koswatta, Jing Guo, Dmitri Nikonov
Ballistic transport in carbon nanotube metaloxidesemiconductor fieldeffect transistors (CNTMOSFETs) is simulated using the Nonequilibrium Green’s function formalism. A cylindrical transistor...
http://nanohub.org/resources/1989

recursive algorithm for NEGF in Matlab
13 Nov 2006  Downloads  Contributor(s): Dmitri Nikonov, Siyu Koswatta
This ziparchive contains two Matlab functions for the recursive solution of the partial matrix inversion and partial 3matrix multiplication used in the nonequilibrium Green’s function (NEGF)...
http://nanohub.org/resources/1983

ECE 612 Lecture 25: CMOS Circuits, Part I I
06 Nov 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1969

ECE 612 Lecture 23: CMOS Process Flow
06 Nov 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1966

ECE 612 Lecture 24: CMOS Circuits, Part I
05 Nov 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1962

ECE 612 Lecture 21: Gate resistance and Interconnects
02 Nov 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1956

Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006  Papers  Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan
tum mechanical effects begin to manifest themselves and affect important device
performance metrics....
http://nanohub.org/resources/1930

Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006  Papers  Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube
electronic devices and in identifying potential applications has occurred. In a nanotube,
low bias...
http://nanohub.org/resources/1928

ECE 612 Lecture 20: MOSFET Leakage
18 Oct 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1899