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ECE 612 Lecture 9: MOSFET IV, Part III
0.0 out of 5 stars
12 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 5: Poly Si Gate MOS Capacitors
08 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 4: MOS Capacitors
05 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
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28 Aug 2006 | Online Presentations | Contributor(s): Greg Snider
Nanoelectronic architectures at this point are necessarily speculative: We are still evaluating many different approaches to fabrication and are exploring unconventional devices made possible at...
Investigation of the Electrical Characteristics of Triple-Gate FinFETs and Silicon-Nanowire FETs
16 Aug 2006 | Online Presentations | Contributor(s): Monica Taba, Gerhard Klimeck
Electrical characteristics of various Fin field-effect transistors (FinFETs) and silicon-nanowires were analyzed and compared using a modified three-dimensional self-consistent quantum-mechanical...
4.5 out of 5 stars
14 Aug 2006 | Online Presentations | Contributor(s): Margarita Shalaev
DNA is a relatively inexpensive and ubiquitous material that can be used as a scaffold for constructing nanowires. Our research focuses on the manufacturing of DNA-templated, magnetic nanowires....
Surface Analysis of Organic Monlayers Using FTIR and XPS
14 Aug 2006 | Online Presentations | Contributor(s): Jamie Nipple, Michael Toole, David Janes
Current research concerning self-assembled monolayers (SAM) focuses on the fabrication of microelectronics utilizing a semiconductor/molecule/metal junction. This study seeks to investigate...
A MATLAB code for Hartree Fock calculation of H-H ground state bondlength and energy using STO-4G
08 Aug 2006 | Downloads | Contributor(s): Amritanshu Palaria
Hartree Fock (HF) theory is one of the basic theories underlying the current understanding of the electronic structure of materials. It is a simple non-relativistic treatment of many electron...
ECE 612 Nanoscale Transistors (Fall 2006)
08 Aug 2006 | Courses | Contributor(s): Mark Lundstrom
Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NT
Nanoscale Transistors is a five-week online...
ECE 612 Introductory Lecture (Fall 06)
4.0 out of 5 stars
08 Aug 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 1: MOSFET Review
ECE 612 Lecture 3: 1D MOS Electrostatics
ECE 612 Lecture 2: Introduction to Device Simulation
Quantum Transport: Atom to Transistor (Spring 2004)
07 Aug 2006 | Courses | Contributor(s): Supriyo Datta
A newer version of this course is now available
and we would greatly appreciate your feedback regarding the new format and contents.
Nanotubes and Nanowires: One-dimensional Materials
17 Jul 2006 | Online Presentations | Contributor(s): Timothy D. Sands
What is a nanowire? What is a nanotube? Why are they interesting and what are their potential applications? How are they made? This presentation is intended to begin to answer these questions...
Exploring Electron Transfer with Density Functional Theory
03 Jul 2006 | Online Presentations | Contributor(s): Troy Van Voorhis
This talk will highlight several illustrative applications of constrained density functional
theory (DFT) to electron transfer dynamics in electronic materials. The kinetics of these
NanoMOS 3.0: First-Time User Guide
06 Jun 2006 | Online Presentations | Contributor(s): Kurtis Cantley, Mark Lundstrom
This tutorial is an introduction to the nanoMOS simulation tool for new users. Descriptions of input and output parameters are included, along with new features associated with the Rappture...
Logic Devices and Circuits on Carbon Nanotubes
23 May 2006 | Online Presentations | Contributor(s): Joerg Appenzeller
Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic...
Exploring New Channel Materials for Nanoscale CMOS
21 May 2006 | Papers | Contributor(s): Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...
Device Physics and Simulation of Silicon Nanowire Transistors
20 May 2006 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...