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04 Aug 2004 | | Contributor(s):: Mark Lundstrom
The transistor is the basic element of electronic systems. The integrated circuits inside today's personal computers, cell phones, PDA's, etc., contain hundreds of millions of transistors on a chip of silicon about 2 cm on a side. Each technology generation, engineers shrink the size of...
15 May 2005 | | Contributor(s):: Connor S. Rafferty, kent smith, Yang Liu, Derrick Kearney, Steven Clark
Framework for solving systems of partial differential equations (PDEs) in time and 1, 2, or 3 space dimensions
MATLAB Scripts for "Quantum Transport: Atom to Transistor"
15 Mar 2005 | | Contributor(s):: Supriyo Datta
Tinker with quantum transport models! Download the MATLAB scripts used to demonstrate the physics described in Supriyo Datta's book Quantum Transport: Atom to Transistor. These simple models are less than a page of code, and yet they reproduce much of the fundamental physics observed in...
Self-Heating and Scaling of Silicon Nano-Transistors
05 Aug 2004 | | Contributor(s):: Eric Pop
The most often cited technological roadblock of nanoscale electronics is the "power problem," i.e. power densities and device temperatures reaching levels that will prevent their reliable operation. Technology roadmap (ITRS) requirements are expected to lead to more heat dissipation problems,...
NanoMOS 2.5 Source Code Download
22 Feb 2005 | | Contributor(s):: , Sebastien Goasguen
NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy transport, quantum ballistic, and quantum diffusive). The transport models treat quantum effects in the...
Curriculum on Nanotechnology
27 Jan 2005 |
To exploit the opportunities that nanoscience is giving us, engineers will need to learn how to think about materials, devices, circuits, and systems in new ways. The NCN seeks to bring the new understanding emerging from research in nanoscience into the graduate and undergraduate curriculum....
Exponential Challenges, Exponential Rewards - The Future of Moore's Law
14 Dec 2004 | | Contributor(s)::
Three exponentials have been the foundation of today's electronics, which are often taken for granted—namely transistor density, performance, and energy. Moore's Law captures the impact of these exponentials. Exponentially increasing transistor integration capacity, and exponentially...
Electronic Transport in Semiconductors (Introductory Lecture)
25 Aug 2004 | | Contributor(s):: Mark Lundstrom
Welcome to the ECE 656 Introductory lecture. The objective of the course is to develop a clear, physical understanding of charge carrier transport in bulk semiconductors and in small semiconductor devices.The emphasis is on transport physics and its consequences in a device context. The course...
Faster Materials versus Nanoscaled Si and SiGe: A Fork in the Roadmap?
20 Apr 2004 | | Contributor(s):: Jerry M. Woodall
Strained Si and SiGe MOSFET technologies face fundamental limits towards the end of this decade when the technology roadmap calls for gate dimensions of 45 nm headed for 22 nm. This fact, and difficulties in developing a suitable high-K dielectric, have stimulated the search for alternatives to...
SURI 2003 Conference
07 Aug 2003 |
2003 SURI Conference Proceedings
Digital Electronics: Fundamental Limits and Future Prospects
20 Jan 2004 | | Contributor(s)::
I will review some old and some recent work on the fundamental (and not so fundamental) limits imposed by physics of electron devices on their density and power consumption.
A Personal Quest for Information
19 Feb 2004 | | Contributor(s)::
This talk will report results and conclusions from my personal investigations into several different disciplines, carried out with the unifying intent of uncovering some of the fundamental principles that govern representation, processing, and the communication of information. The specific...
Nanoelectronics and the Future of Microelectronics
22 Aug 2002 | | Contributor(s):: Mark Lundstrom
Progress in silicon technology continues to outpace the historic pace of Moore's Law, but the end of device scaling now seems to be only 10-15 years away. As a result, there is intense interest in new, molecular-scale devices that might complement a basic silicon platform by providing it with...
Nanoelectronic Scaling Tradeoffs: What does Physics Have to Say?
23 Sep 2003 | | Contributor(s):: Victor Zhirnov
Beyond CMOS, several completely new approaches to information-processing and data-storage technologies and architectures are emerging to address the timeframe beyond the current SIA International Technology Roadmap for Semiconductors (ITRS). A wide range of new ideas have been proposed for...
Electronic Transport in Semi-conducting Carbon Nanotube Transistor Devices
16 Oct 2003 | | Contributor(s):: Joerg Appenzeller
Recent demonstrations of high performance carbon nanotube field-effect transistors (CNFETs) highlight their potential for a future nanotube-based electronics. Besides being just a nanometer in diameter, carbon nanotubes offer intrinsic advantages if compared with silicon that are responsible for...
Quantum-dot Cellular Automata
24 Nov 2003 | | Contributor(s)::
The multiple challenges presented by the problem of scaling transistor sizes are all related to the fact that transistors encode binary information by the state of a current switch. What is required is a new paradigm, still capable of providing general purpose digital computation, but which can...
Theory of Ballistic Nanotransistors
27 Nov 2002 | | Contributor(s):: Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to...