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ECE 695A Lecture 15: Off-state HCI Degradation
19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
ON vs. OFF State HCI Degradation
Origin of hot carriers at off-state
SiH vs. SiO – who is getting broken? Voltage acceleration factors by scaling
ECE 695A Lecture 16: Temperature Dependence of HCI
Empirical observations regarding HCI
Theory of bond dissociation: MVE vs. RRK
Hot carrier dissociation of SiH bonds
Hot carrier dissociation of SiO bonds
ECE 695A Lecture 13: Introductory Lecture on HCI Degradation
Background and features of HCI Degradation
Origin of Hot carriers
Theory of Si-H Bond Dissociation
Theory of Si-O Bond...
ECE 695A Lecture 13R: Review Questions
Both SiH and SiO are involved in HCI degradation. Give two evidences.
Why doesn’t HCI occur during NBTI stress condition?
I suggested that HCI curve can shifted...
ECE 695A Lecture 5R: Review Questions
12 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
What is the difference between coordination and composition?
Is periodicity essential for a defect-free structure?
Why can’t the amorphous material have arbitrary ring...
ECE 695A Lecture 11R: Review Questions
08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Does Einstein relationship hold for activated diffusion?
People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you...
ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation
ECE 695A Lecture 12: Field Dependence of NBTI
Background: Field dependent degradation
Components of field-dependent dissociation:
Voltage acceleration factors
ECE 695A Lecture 12R: Review Questions
Explain the difference between local field and global field within an oxide.
Explain physically why electric field decreases bond strength.
How does the dissociation...
ECE 695A Lecture 9R: Review Questions
Does NBTI power-exponent depend on voltage or temperature?
Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?
How does one know that...
ECE 695A Lecture 11: Temperature Dependence of NBTI
07 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review: Temperature activation & NBTI
Temperature dependent forward/reverse rates
Temperature dependence of diffusion coefficient
Material dependence of activation...
ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies
06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
NBTI stress and relaxation by R-D model
Frequency independence and lifetime projection
Duty cycle dependence
The magic of measurement
ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase
Background: Time-dependent degradation
The Reaction-Diffusion model
Approximate solution to R-D model in stress phase
Degradation free transistors
ECE 695A Lecture 6: Defects in the Bulk and at Interfaces
01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Strain in materials/origin of defects
Examples: bulk defects
Examples: interface defects
ECE 695A Lecture 8: Phenomenological Observations for NBTI
Time, voltage, temperature dependencies
ECE 695A Lecture 8R: Review Questions
What is the distinction between BTI and NBTI phenomena?
What does it mean that a process is thermally activated?
What is the difference between parametric failure and catastrophic failure?...
ECE 695A Lecture 7: Trapping in Pre-existing Traps
29 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Pre-existing vs. stress-induced traps
Voltage-shift in pre-existing bulk/interface traps
Random Telegraph Noise, 1/f noise
ECE 695A Lecture 7A: Appendix - Theory of Stochastic Distribution
Supplemental information for Lecture 7: Trapping in Pre-existing Traps
ECE 695A Lecture 7R: Review Questions
Why are there more types of defects in crystals than in amorphous material?
From the perspective of Maxwell’s relation, how does H reduce defect density?
Why is HfO2 so...
ECE 695A Reliability Physics of Nanotransistors
17 Jan 2013 | Courses | Contributor(s): Muhammad Alam
This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a...