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A Short Overview of the NEEDS Initiative
06 Jun 2016 | | Contributor(s):: Mark Lundstrom
The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.
Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence
25 Nov 2015 | | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada
IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...
Inter-band Tunnel Transistors: Opportunities and Challenges
30 Oct 2015 | | Contributor(s):: Suman Datta
In this talk, we will review progress in Tunnel FETs and also analyze primary roadblocks in the path towards achieving steep switching performance in III-V HTFET.
Negative Capacitance Ferroelectric Transistors: A Promising Steep Slope Device Candidate?
In this talk, we will review progress in non-perovskite ALD based ferroelectric dielectrics which have strong implication for VLSI compatible negative capacitance Ferroelectric FETs.
The Deployment and Evolution of the First NEEDS- Certified Model — MIT Virtual Source Compact Model for Silicon Nanotransistors
04 Oct 2015 | | Contributor(s):: Shaloo Rakheja
In my talk, I will walk you through the fundamental steps involved in developing compact models, using the MVS model as an example. From the “lessons learned” in the process of MVS release in 2013 and its subsequent updates, I will provide a checklist of good practices to adopt while...
The Ultimate Scaling Limit - A Deterministic Single Atom Transistor
10 Mar 2015 | | Contributor(s):: Gerhard Klimeck
A talk by Dr. Gerhard Klimeck, Director of nanoHUB.org, Purdue University, Founder of NEMOco, LLC @ the University of Michigan.
RF Solid-State Vibrating Transistors
15 Feb 2014 | | Contributor(s):: Dana Weinstein
In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of IBM’s SOI CMOS process, without any post-processing or packaging will be described. ...
ECE 612 Lecture 9: Subthreshold Conduction
out of 5 stars
25 Jan 2014 | | Contributor(s):: Mark Lundstrom
Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006 teaching.
ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances
Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.
Tunnel FETs - Device Physics and Realizations
10 Jul 2013 | | Contributor(s):: Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.
Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices
28 Jun 2013 | | Contributor(s):: Siyu Koswatta
Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier...
Modeling Quantum Transport in Nanoscale Transistors
28 Jun 2013 | | Contributor(s):: Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...
Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
28 Jun 2013 | | Contributor(s):: Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed thechannel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes new challenges on device simulation as the essential physics of carrier transport departs that of...
Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013 | | Contributor(s):: Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...
Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013 | | Contributor(s):: Carl R. Huster
For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...
Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013 | | Contributor(s):: Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | | Contributor(s):: Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...
ECE 695A Lecture 18: DC-IV and Charge Pumping Methods
25 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Recall: Properties of Interface DefectsFlux-based method 1: Direct Current-Voltage methodFlux-based method 2: Charge pumping methodConclusions
ECE 695A Lecture 16: Review Questions
22 Feb 2013 | | Contributor(s):: Muhammad Alam
Review QuestionWhat is the difference between hot atom dissociation vs. cold atom dissociation?.Many experiments are reported at 77K and 295K. Why these temperatures?.Why is there such a big difference between VT degradation and NIT degradation?.Impact ionization threshold is significantly...
ECE 695A Lecture 17: Subthreshold and Idlin Methods
21 Feb 2013 | | Contributor(s):: Muhammad Alam