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ECE 659 Lecture 10: Two-Probe/Four-Probe
05 Feb 2009 | Online Presentations | Contributor(s): Supriyo Datta
https://nanohub.org/resources/6244
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ECE 659 Lecture 9: Landauer-Buttiker Formalism
05 Feb 2009 | Online Presentations | Contributor(s): Supriyo Datta
https://nanohub.org/resources/6241
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ECE 659 Lecture 8: Scattering Theory of Transport
03 Feb 2009 | Online Presentations | Contributor(s): Supriyo Datta
https://nanohub.org/resources/6218
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ECE 659 Lecture 7: Hall Effect II
03 Feb 2009 | Online Presentations | Contributor(s): Supriyo Datta
https://nanohub.org/resources/6215
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ECE 659 Lecture 6: Hall Effect I
03 Feb 2009 | Online Presentations | Contributor(s): Supriyo Datta
https://nanohub.org/resources/6212
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ECE 659 Quantum Transport: Atom to Transistor
27 Jan 2009 | Courses | Contributor(s): Supriyo Datta
This course the basic concepts of quantum mechanics and statistical mechanics with special emphasis on non-equilibrium problems involving nanoscale current flow to graduate students with little or no …
https://nanohub.org/resources/6172
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ECE 659 Lecture 5: Where is the Resistance?
27 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta
https://nanohub.org/resources/6169
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ECE 659 Lecture 4: Landauer Model
27 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta
https://nanohub.org/resources/6166
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ECE 659 Lecture 1: Introduction
21 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta
https://nanohub.org/resources/6145
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ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport
21 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta
https://nanohub.org/resources/6148
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ECE 659 Lecture 3: Mobility
21 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta
https://nanohub.org/resources/6151
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ECE 612 Lecture 27: Heterojunction Bipolar Transistors
15 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom
https://nanohub.org/resources/6047
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ECE 612 Lecture 25: SOI Electrostatics
08 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1. Introduction, 2. General solution, 3. VTF vs. VGB, 4. Subthreshold slope, 5. Double gate (DG) SOI, 6. Recap, 7. Discussion, 8. Summary.
https://nanohub.org/resources/6014
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ECE 612 Lecture 22: CMOS Circuit Essentials
24 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) The CMOS inverter, 2) Speed, 3) Power, 4) Circuit performance, 5) Metrics, 6) Limits. This lecture is an overview of CMOS circuits. For a more detailed presentation, the …
https://nanohub.org/resources/5927
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ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
14 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
Guest lecturer: Muhammad A. Alam.
https://nanohub.org/resources/5861
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ECE 612 Lecture 19: Device Variability
14 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Sources of variability, 2) Random dopantfluctuations (RDF), 3) Line edge roughness (LER), 4) Impact on design.
https://nanohub.org/resources/5856
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Lecture 2: Thresholds, Islands, and Fractals
04 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via …
https://nanohub.org/resources/5698
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Lecture 1: Percolation in Electronic Devices
04 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity …
https://nanohub.org/resources/5697
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ECE 612 Lecture 17: Gate Resistance and Interconnects
03 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Gate Resistance, 2) Interconnects, 3) ITRS, 4) Summary.
https://nanohub.org/resources/5700
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Percolation Theory
03 Nov 2008 | Courses | Contributor(s): Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon- or …
https://nanohub.org/resources/5660