Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

Resources (241-260 of 417)

  1. ECE 659 Quantum Transport: Atom to Transistor

    27 Jan 2009 | | Contributor(s):: Supriyo Datta

    Spring 2009 This is a newly produced version of the course that was formerly available. We would greatly appreciate your feedback regarding the new format and contents. Traditionally atomistic approaches have been used to model materials in terms of average parameters like the...

  2. ECE 659 Lecture 5: Where is the Resistance?

    27 Jan 2009 | | Contributor(s):: Supriyo Datta

  3. ECE 659 Lecture 4: Landauer Model

    27 Jan 2009 | | Contributor(s):: Supriyo Datta

  4. ECE 659 Lecture 1: Introduction

    21 Jan 2009 | | Contributor(s):: Supriyo Datta

  5. ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport

    21 Jan 2009 | | Contributor(s):: Supriyo Datta

  6. ECE 659 Lecture 3: Mobility

    21 Jan 2009 | | Contributor(s):: Supriyo Datta

  7. ECE 612 Lecture 27: Heterojunction Bipolar Transistors

    15 Dec 2008 | | Contributor(s):: Mark Lundstrom

  8. ECE 612 Lecture 25: SOI Electrostatics

    08 Dec 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1. Introduction,2. General solution, 3. VTF vs. VGB,4. Subthreshold slope,5. Double gate (DG) SOI,6. Recap,7. Discussion,8. Summary.

  9. ECE 612 Lecture 22: CMOS Circuit Essentials

    24 Nov 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) The CMOS inverter,2) Speed,3) Power,4) Circuit performance,5) Metrics,6) Limits.This lecture is an overview of CMOS circuits. For a more detailed presentation, the following lectures from the Fall 2006 teaching of this course should be viewed:Lecture 24: CMOS Circuits, Part I (Fall...

  10. ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET

    14 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    Guest lecturer: Muhammad A. Alam.

  11. ECE 612 Lecture 19: Device Variability

    14 Nov 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Sources of variability,2) Random dopantfluctuations (RDF),3) Line edge roughness (LER),4) Impact on design.

  12. Lecture 2: Thresholds, Islands, and Fractals

    04 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via elementary examples. These three concepts will form the theoretical foundation for discussion in...

  13. Lecture 1: Percolation in Electronic Devices

    04 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity of these phenomena however, the concepts percolation theory provides a broad theoretical framework...

  14. ECE 612 Lecture 17: Gate Resistance and Interconnects

    03 Nov 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Gate Resistance,2) Interconnects,3) ITRS,4) Summary.

  15. Percolation Theory

    03 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon- or metal crystals in nanocrystal Flash memory, the number of Nanowires in a flexible nanoNET...

  16. ECE 612 Lecture 16: MOSFET Leakage

    31 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) MOSFET leakage components,2) Band to band tunneling,3) Gate-induced drain leakage,4) Gate leakage,5) Scaling and ITRS,6) Summary.

  17. ECE 612 Lecture 15: Series Resistance (and effective channel length)

    29 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Effect on I-V,2) Series resistance components,3) Metal-semiconductor resistance,4) Other series resistance components,5) Discussion,6) Effective Channel Length,7) Summary.

  18. ECE 612 Lecture 14: VT Engineering

    28 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) VT Specification,2) Uniform Doping,3) Delta-function doping, xC = 0,4) Delta-function doping, xC > 0,5) Stepwise uniform,6) Integral solution.The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of how non-uniform doping profiles affect...

  19. ECE 612 Lecture 12: 2D Electrostatics

    28 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Consequences of 2D electrostatics,2) 2D Poisson equation,3) Charge sharing model,4) Barrier lowering,5) 2D capacitor model,6) Geometric screening length,7) Discussion,8) Summary.

  20. ECE 612 Lecture 11: Effective Mobility

    20 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Review of mobility,2) “Effective”mobility,3) Physics of the effective mobility,4) Measuring effective mobility,5) Discussion,6) Summary.