Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

Resources (361-380 of 417)

  1. NanoMOS 3.0: First-Time User Guide

    06 Jun 2006 | | Contributor(s):: Kurtis Cantley, Mark Lundstrom

    This tutorial is an introduction to the nanoMOS simulation tool for new users. Descriptions of input and output parameters are included, along with new features associated with the Rappture interface. There are also descriptions of nine examples that are loadable in the new version to help the...

  2. Logic Devices and Circuits on Carbon Nanotubes

    05 Apr 2006 | | Contributor(s):: Joerg Appenzeller

    Over the last years carbon nanotubes (CNs) have attracted an increasing interest as building blocks for nano-electronics applications. Due to their unique properties enabling e.g. ballistic transport at room-temperature over several hundred nanometers, high performance CN field-effect...

  3. Exploring New Channel Materials for Nanoscale CMOS

    21 May 2006 | | Contributor(s):: anisur rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices.Novel process techniques, such as ALD, high-k dielectrics, and...

  4. Device Physics and Simulation of Silicon Nanowire Transistors

    20 May 2006 | | Contributor(s)::

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

  5. Nanowire

    19 May 2006 | | Contributor(s):: Hong-Hyun Park, Lang Zeng, Matthew Buresh, Siqi Wang, Gerhard Klimeck, Saumitra Raj Mehrotra, Clemens Heitzinger, Benjamin P Haley

    Simulate 3D nanowire transport in the effective mass approximation with phonon scattering and 3D Poisson self-consistent solution

  6. Nanoscale Transistors: Advanced VLSI Devices (Introductory Lecture)

    20 Apr 2006 | | Contributor(s):: Mark Lundstrom

    Welcome to the ECE 612 Introductory/Overview lecture. This course examines the device physics of advanced transistors and the process, device, circuit, and systems considerations that enter into the development of new integrated circuit technologies.

  7. EDA Challenges in Nanoscale Design: A Synopsys Perspective

    11 Apr 2006 | | Contributor(s)::

    Rich Goldman gives an overview of the current state ofthe semiconductor and EDA (Electronic Design Automation) industry with aspecial focus on the impact of nanometer scale design on design tools andthe economics of the industry.

  8. The Long and Short of Pick-up Stick Transistors: A Promising Technology for Nano- and Macro-Electronics

    11 Apr 2006 | | Contributor(s):: Muhammad A. Alam

    In recent years, there has been enormous interest in the emerging field of large-area macro-electronics, and fabricating thin-film transistors on flexible substrates. This talk will cover recent work in developing a comprehensive theoretical framework to describe the performance of these...

  9. Thermal Microsystems for On-Chip Thermal Engineering

    04 Apr 2006 | | Contributor(s):: Suresh V. Garimella

    Electro-thermal co-design at the micro- and nano-scales is critical for achieving desired performance and reliability in microelectronic circuits. Emerging thermal microsystems technologies for this application area are discussed, with specific examples including a novel micromechanical...

  10. Modeling Single and Dual-Gate Capacitors using SCHRED

    31 Mar 2006 | | Contributor(s):: Dragica Vasileska

    SCHRED stands for self-consistent solver of the 1D Poisson and 1D effective mass Schrodinger equation as applied to modeling single gate or dual-gate capacitors. The program incorporates many features such as choice of degenerate and non-degenerate statistics for semiclassical charge...

  11. Mark Ratner Interview on Nanotechnology

    23 Mar 2006 | | Contributor(s):: Mark Ratner, Krishna Madhavan

    Nanotechnology interview with Krishna Madhavan.

  12. Molecular Transport Structures: Elastic Scattering, Vibronic Effects and Beyond

    13 Feb 2006 | | Contributor(s):: Mark Ratner, Abraham Nitzan,

    Current experimental efforts are clarifying quite beautifully the nature of charge transport in so-called molecular junctions, in which a single molecule provides the channel for current flow between two electrodes. The theoretical modeling of such structures is challenging, because of the...

  13. Making the Tiniest and Fastest Transistor using Atomic Layer Deposition (ALD)

    13 Feb 2006 | | Contributor(s):: peide ye

    Atomic layer deposition (ALD) is an emerging nanotechnology enables the deposit of ultrathin films, one atomic layer by one atomic layer. ALD provides a powerful, new capability to grow or regrow nanoscale ultrathin films of metals, semiconductors and insulators. This presentation introduces ALD...

  14. A Gentle Introduction to Nanotechnology and Nanoscience

    13 Feb 2006 | | Contributor(s):: Mark Ratner

    While the Greek root nano just means dwarf, the nanoscale has become a giant focus of contemporary science and technology. We will examine the fundamental issues underlying the excitement involved in nanoscale research - what, why and how. Specific topics include assembly, properties,...

  15. Schred

    30 Mar 2006 | | Contributor(s):: Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng

    SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.

  16. Nano-Scale Device Simulations Using PROPHET-Lab Exercise 2

    08 Feb 2006 | | Contributor(s):: yang liu

    Companion exercises for "Nano-Scale Device Simulations Using PROPHET".

  17. Nano-Scale Device Simulations Using PROPHET-Lab Exercise 1

    08 Feb 2006 | | Contributor(s):: yang liu

    Companion exercises for "Nano-Scale Device Simulations Using PROPHET".

  18. A Primer on Semiconductor Device Simulation

    23 Jan 2006 | | Contributor(s):: Mark Lundstrom

    Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation tool intelligently, one must know what's "under the hood." This talk is a tutorial introduction designed for someone using semiconductor device simulation...

  19. Nano-Scale Device Simulations Using PROPHET-Part II: PDE Systems

    20 Jan 2006 | | Contributor(s):: yang liu,

    Part II uses examples toillustrate how to build user-defined PDE systems in PROPHET.

  20. Nano-Scale Device Simulations Using PROPHET-Part I: Basics

    20 Jan 2006 | | Contributor(s):: yang liu,

    Part I covers the basics of PROPHET,including the set-up of simulation structures and parameters based onpre-defined PDE systems.