-
Lecture 3A: The Ballistic MOSFET
10 Sep 2008 | | Contributor(s):: Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new physics in this lecture - just a proper mathematical derivation of the approach that was developed...
-
Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
10 Sep 2008 | | Contributor(s):: Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our traditional understanding of electronic devices needs to be complemented with a new perspective that begins...
-
ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.
-
ECE 612 Lecture 2: 1D MOS Electrostatics II
09 Sep 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Review,2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.
-
ECE 612 Lecture 1: 1D MOS Electrostatics I
09 Sep 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Review of some fundamentals,2) Identify next steps.
-
Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008 | | Contributor(s):: Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent lectures.
-
Lecture 5: Application to State-of-the-Art FETs
08 Sep 2008 | | Contributor(s):: Mark Lundstrom
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the operation of modern FETs.
-
Lecture 4: Scattering in Nanoscale MOSFETs
08 Sep 2008 | | Contributor(s):: Mark Lundstrom
No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective in this lecture is to present a simple, physical picture that describes the essence of the problem and...
-
ECE 612: Nanoscale Transistors (Fall 2008)
27 Aug 2008 | | Contributor(s):: Mark Lundstrom
Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NT Fall 2008 This course examines the device physics of advanced transistors and the process, device, circuit, and systems...
-
Introduction: Physics of Nanoscale MOSFETs
26 Aug 2008 | | Contributor(s):: Mark Lundstrom
-
2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008 | | Contributor(s):: Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic devices, this means first understanding the smallest electronic device – a single molecule with two...
-
Physics of Nanoscale MOSFETs
26 Aug 2008 | | Contributor(s):: Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of understanding MOSFETs that is much more suitable than traditional approaches when the channel lengths are of...
-
Lecture 1: Review of MOSFET Fundamentals
26 Aug 2008 | | Contributor(s):: Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and the meaning of ballistic transport is also included.
-
Lecture 1A: What and where is the resistance?
20 Aug 2008 | | Contributor(s):: Supriyo Datta
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which electrons hop in and out of the two contacts, labeled source and drain. This model is used to explain...
-
Lecture 1B: What and where is the resistance?
20 Aug 2008 | | Contributor(s):: Supriyo Datta
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which electrons hop in and out of the two contacts, labeled source and drain. This model is used to explain...
-
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor devices
-
Nano Carbon: From ballistic transistors to atomic drumheads
14 May 2008 | | Contributor(s):: Paul L. McEuen
Carbon takes many forms, from precious diamonds to lowly graphite. Surprisingly, it is the latter that is the most prized by nano physicists. Graphene, a single layer of graphite, can serve as an impenetrable membrane a single atom thick. Rolled up into a nanometer-diameter cylinder--a carbon...
-
Examples for QuaMC 2D particle-based device Simulator Tool
10 May 2008 | | Contributor(s):: Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
We provide three examples that demonstrate the full capabilities of QuaMC 2D for alternative device technologies.
-
What Promises do Nanotubes and Nanowires Hold for Future Nanoelectronics Applications?
18 Feb 2008 | | Contributor(s):: Joerg Appenzeller
Various low-dimensional materials are currently explored for future electronics applications. The common ground for all these structures is that the surface related impact can no longer be ignored – the common approach applied to predict properties of bulk-type three-dimensional (3D) materials....
-
Semiconductor Device Education Material
28 Jan 2008 | | Contributor(s):: Gerhard Klimeck
This page has moved to "a Wiki page format" When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are...