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A Short Overview of the NEEDS Initiative
06 Jun 2016 | Online Presentations | Contributor(s): Mark Lundstrom
The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.
The Ultimate Scaling Limit - A Deterministic Single Atom Transistor
10 Mar 2015 | Online Presentations | Contributor(s): Gerhard Klimeck
A talk by Dr. Gerhard Klimeck, Director of nanoHUB.org, Purdue University, Founder of NEMOco, LLC @ the University of Michigan.
RF Solid-State Vibrating Transistors
15 Feb 2014 | Online Presentations | Contributor(s): Dana Weinstein
In this talk, I will discuss the Resonant Body Transistor (RBT), which can be integrated into a standard CMOS process. The first hybrid RF MEMS-CMOS resonators in Si at the transistor level of...
ECE 612 Lecture 9: Subthreshold Conduction
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25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom
Please view ECE 612 Lecture 12: Subthreshold Conduction from the 2006 teaching.
ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances
Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.
Tunnel FETs - Device Physics and Realizations
10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...
Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices
28 Jun 2013 | Papers | Contributor(s): Siyu Koswatta
Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices...
Modeling Quantum Transport in Nanoscale Transistors
28 Jun 2013 | Papers | Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore,...
Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed the
channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...
Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013 | Papers | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...
Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013 | Papers | Contributor(s): Carl R. Huster
For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive...
Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013 | Papers | Contributor(s): Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators...
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | Papers | Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...
ECE 695A Lecture 18: DC-IV and Charge Pumping Methods
25 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Recall: Properties of Interface Defects
Flux-based method 1: Direct Current-Voltage method
Flux-based method 2: Charge pumping method
ECE 695A Lecture 16: Review Questions
22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
What is the difference between hot atom dissociation vs. cold atom dissociation?.
Many experiments are reported at 77K and 295K. Why these temperatures?.
Why is there such...
ECE 695A Lecture 17: Subthreshold and Idlin Methods
21 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
ECE 695A Lecture 15R: Review Questions
20 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI?
What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments....
ECE 695A Lecture 14a: Voltage Dependent HCI I
19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Background and Empirical Observations
Theory of Hot Carriers: Hydrodynamic Model
Theory of Hot Carriers: Monte Carlo Model
Theory of Hot Carriers: Universal...
ECE 695A Lecture 14b: Voltage Dependent HCI II
ECE 695A Lecture 14R: Review Questions
Why is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current?
What are the three methods of...