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ECE 695A Lecture 7: Trapping in Pre-existing Traps
29 Jan 2013 | | Contributor(s):: Muhammad Alam
Outline:Pre-existing vs. stress-induced trapsVoltage-shift in pre-existing bulk/interface trapsRandom Telegraph Noise, 1/f noiseConclusion
ECE 695A Lecture 7A: Appendix - Theory of Stochastic Distribution
Supplemental information for Lecture 7: Trapping in Pre-existing Traps
ECE 695A Lecture 7R: Review Questions
Review Questions:Why are there more types of defects in crystals than in amorphous material?From the perspective of Maxwell’s relation, how does H reduce defect density?Why is HfO2 so defective --- and why do you want to use it?Which type of traps involve faster trapping/detrapping, Pb center or...
ECE 695A Reliability Physics of Nanotransistors
17 Jan 2013 | | Contributor(s):: Muhammad Alam
This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a voltage is applied.
ECE 695A Lecture 1: Reliability of Nanoelectronic Devices
11 Jan 2013 | | Contributor(s):: Muhammad Alam
Outline:Evolving Landscape of ElectronicsPerformance, Variability, and ReliabilityClassification of ReliabilityCourse InformationConclusions
ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012 | | Contributor(s):: Gerhard Klimeck
Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
out of 5 stars
24 Oct 2012 | | Contributor(s):: Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning . (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret .) The objective is to understand how to treat MOS electrostatics without...
nanoHUB-U NT Nanoscale Transistors: Scientific Overview
03 Aug 2012 | | Contributor(s):: Mark Lundstrom
For details see http://nanohub.org/uNanoscale Transistors has been refined and condensed into a five-week online course that develops a unified framework for understanding essentials of nanoscale transistors without the need for admission, registration, or travel. This online course can be taken...
Nanoscale Transistors: Scientific Overview
19 Jul 2012 | | Contributor(s):: Mark Lundstrom
Nanoscale Transistors Lecture 1: The Most Important Invention of the 20th Century?
Nanoscale Transistors Lecture 2: IV Characteristics - traditional approach
Nanoscale Transistors Lecture 3: Controlling Current by Modulating a Barrier
Nanoscale Transistors Lecture 4: MOS Electrostatics
Nanoscale Transistors Lecture 5: Transport - ballistic, diffusive, non-local, and quantum
Nanoscale Transistors Lecture 6: Ballistic Model
Nanoscale Transistors Lecture 7: Comparison to Experimental Results
Nanoscale Transistors Lecture 8: Connection to Traditional Model
Nanoscale Transistors Lecture 9: Scattering and Transmission
Nanoscale Transistors Lecture 10: Scattering Model
Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities