Tags: nanotransistors


A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

Resources (401-413 of 413)

  1. NanoMOS 2.5 Source Code Download

    22 Feb 2005 | Downloads | Contributor(s): Zhibin Ren, Sebastien Goasguen

    NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy...


  2. Curriculum on Nanotechnology

    27 Jan 2005 | Courses

    To exploit the opportunities that nanoscience is giving us, engineers will need to learn how to think about materials, devices, circuits, and systems in new ways. The NCN seeks to bring the new...


  3. Exponential Challenges, Exponential Rewards - The Future of Moore's Law

    14 Dec 2004 | Online Presentations | Contributor(s): Shekhar Borkar

    Three exponentials have been the foundation of today's electronics, which are often taken for granted—namely transistor density, performance, and energy. Moore's Law captures the impact of...


  4. Electronic Transport in Semiconductors (Introductory Lecture)

    26 Aug 2004 | Online Presentations | Contributor(s): Mark Lundstrom

    Welcome to the ECE 656 Introductory lecture. The objective of the course is to develop a clear, physical understanding of charge carrier transport in bulk semiconductors and in small semiconductor...


  5. Faster Materials versus Nanoscaled Si and SiGe: A Fork in the Roadmap?

    22 Jul 2004 | Online Presentations | Contributor(s): Jerry M. Woodall

    Strained Si and SiGe MOSFET technologies face fundamental limits towards the end of this decade when the technology roadmap calls for gate dimensions of 45 nm headed for 22 nm. This fact, and...


  6. SURI 2003 Conference

    21 Apr 2004 | Workshops

    2003 SURI Conference Proceedings


  7. Digital Electronics: Fundamental Limits and Future Prospects

    13 Apr 2004 | Online Presentations | Contributor(s): Konstantin K. Likharev

    I will review some old and some recent work on the fundamental (and not so fundamental) limits imposed by physics of electron devices on their density and power consumption.


  8. A Personal Quest for Information

    13 Apr 2004 | Online Presentations | Contributor(s): Vwani P. Roychowdhury

    This talk will report results and conclusions from my personal investigations into several different disciplines, carried out with the unifying intent of uncovering some of the fundamental...


  9. Nanoelectronics and the Future of Microelectronics

    12 Apr 2004 | Online Presentations | Contributor(s): Mark Lundstrom

    Progress in silicon technology continues to outpace the historic pace of Moore's Law, but the end of device scaling now seems to be only 10-15 years away. As a result, there is intense interest in...


  10. Nanoelectronic Scaling Tradeoffs: What does Physics Have to Say?

    12 Apr 2004 | Presentation Materials | Contributor(s): Victor Zhirnov

    Beyond CMOS, several completely new approaches to information-processing and data-storage technologies and architectures are emerging to address the timeframe beyond the current SIA International...


  11. Electronic Transport in Semi-conducting Carbon Nanotube Transistor Devices

    12 Apr 2004 | Online Presentations | Contributor(s): Joerg Appenzeller

    Recent demonstrations of high performance carbon nanotube field-effect transistors (CNFETs) highlight their potential for a future nanotube-based electronics. Besides being just a nanometer in...


  12. Quantum-dot Cellular Automata

    12 Apr 2004 | Online Presentations | Contributor(s): Craig S. Lent

    The multiple challenges presented by the problem of scaling transistor sizes are all related to the fact that transistors encode binary information by the state of a current switch. What is...


  13. Theory of Ballistic Nanotransistors

    27 Nov 2002 | Papers | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom

    Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the...