Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
NanoMOS 2.5 Source Code Download
4.5 out of 5 stars
22 Feb 2005 | Downloads | Contributor(s): Zhibin Ren, Sebastien Goasguen
NanoMOS is a 2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs. A choice of five transport models is available (drift-diffusion, classical ballistic, energy...
Curriculum on Nanotechnology
5.0 out of 5 stars
27 Jan 2005 | Courses
To exploit the opportunities that nanoscience is giving us, engineers will need to learn how to think about materials, devices, circuits, and systems in new ways. The NCN seeks to bring the new...
Exponential Challenges, Exponential Rewards - The Future of Moore's Law
14 Dec 2004 | Online Presentations | Contributor(s): Shekhar Borkar
Three exponentials have been the foundation of today's electronics, which are often taken for granted—namely transistor density, performance, and energy. Moore's Law captures the impact of...
Electronic Transport in Semiconductors (Introductory Lecture)
26 Aug 2004 | Online Presentations | Contributor(s): Mark Lundstrom
Welcome to the ECE 656 Introductory lecture. The objective of the course is to develop a clear, physical understanding of charge carrier transport in bulk semiconductors and in small semiconductor...
Faster Materials versus Nanoscaled Si and SiGe: A Fork in the Roadmap?
0.0 out of 5 stars
22 Jul 2004 | Online Presentations | Contributor(s): Jerry M. Woodall
Strained Si and SiGe MOSFET technologies face fundamental limits towards the end of this decade when the technology roadmap calls for gate dimensions of 45 nm headed for 22 nm. This fact, and...
SURI 2003 Conference
21 Apr 2004 | Workshops
2003 SURI Conference Proceedings
Digital Electronics: Fundamental Limits and Future Prospects
13 Apr 2004 | Online Presentations | Contributor(s): Konstantin K. Likharev
I will review some old and some recent work on the fundamental (and not so fundamental) limits imposed by physics of electron devices on their density and power consumption.
A Personal Quest for Information
13 Apr 2004 | Online Presentations | Contributor(s): Vwani P. Roychowdhury
This talk will report results and conclusions from my personal investigations into several different disciplines, carried out with the unifying intent of uncovering some of the fundamental...
Nanoelectronics and the Future of Microelectronics
12 Apr 2004 | Online Presentations | Contributor(s): Mark Lundstrom
Progress in silicon technology continues to outpace the historic pace of Moore's Law, but the end of device scaling now seems to be only 10-15 years away. As a result, there is intense interest in...
Nanoelectronic Scaling Tradeoffs: What does Physics Have to Say?
12 Apr 2004 | Presentation Materials | Contributor(s): Victor Zhirnov
Beyond CMOS, several completely new approaches to information-processing and data-storage technologies and architectures are emerging to address the timeframe beyond the current SIA International...
Electronic Transport in Semi-conducting Carbon Nanotube Transistor Devices
12 Apr 2004 | Online Presentations | Contributor(s): Joerg Appenzeller
Recent demonstrations of high performance carbon nanotube field-effect transistors (CNFETs) highlight their potential for a future nanotube-based electronics. Besides being just a nanometer in...
Quantum-dot Cellular Automata
12 Apr 2004 | Online Presentations | Contributor(s): Craig S. Lent
The multiple challenges presented by the problem of scaling transistor sizes are all related to the fact that transistors encode binary information by the state of a current switch. What is...
Theory of Ballistic Nanotransistors
27 Nov 2002 | Papers | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the...