Tags: nanotransistors

Description

 

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

 

Resources (281-300 of 449)

  1. ECE 612 Lecture 18A: CMOS Process Steps

    12 Nov 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Unit Process Operations,2) Process Variations.

  2. Lecture 2: Thresholds, Islands, and Fractals

    04 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via elementary examples. These three concepts will form the theoretical foundation for discussion in Lecture...

  3. Lecture 1: Percolation in Electronic Devices

    04 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity of these phenomena however, the concepts percolation theory provides a broad theoretical framework...

  4. ECE 612 Lecture 17: Gate Resistance and Interconnects

    03 Nov 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Gate Resistance,2) Interconnects,3) ITRS,4) Summary.

  5. Percolation Theory

    03 Nov 2008 | | Contributor(s):: Muhammad A. Alam

    The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon- or metal crystals in nanocrystal Flash memory, the number of Nanowires in a flexible nanoNET...

  6. ECE 612 Lecture 16: MOSFET Leakage

    31 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) MOSFET leakage components,2) Band to band tunneling,3) Gate-induced drain leakage,4) Gate leakage,5) Scaling and ITRS,6) Summary.

  7. ECE 612 Lecture 15: Series Resistance (and effective channel length)

    29 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Effect on I-V,2) Series resistance components,3) Metal-semiconductor resistance,4) Other series resistance components,5) Discussion,6) Effective Channel Length,7) Summary.

  8. ECE 612 Lecture 14: VT Engineering

    28 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) VT Specification,2) Uniform Doping,3) Delta-function doping, xC = 0,4) Delta-function doping, xC > 0,5) Stepwise uniform,6) Integral solution.The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of how non-uniform doping profiles affect...

  9. ECE 612 Lecture 12: 2D Electrostatics

    28 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Consequences of 2D electrostatics,2) 2D Poisson equation,3) Charge sharing model,4) Barrier lowering,5) 2D capacitor model,6) Geometric screening length,7) Discussion,8) Summary.

  10. ECE 612 Lecture 11: Effective Mobility

    20 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Review of mobility,2) “Effective”mobility,3) Physics of the effective mobility,4) Measuring effective mobility,5) Discussion,6) Summary.

  11. ECE 612 Lecture 8: Scattering Theory of the MOSFET II

    08 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.

  12. ECE 612 Lecture 7: Scattering Theory of the MOSFET I

    08 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.

  13. ECE 612 Lecture 6: MOSFET IV: Velocity saturation

    07 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Review,2) Bulk charge theory (approximate),3) Velocity saturation theory,4) Summary.

  14. ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge

    07 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Introduction,2) Square law theory,3) PN junction effects on MOSFETs,4) Bulk charge theory (exact),5) Summary.

  15. Introductory Comments

    29 Sep 2008 | | Contributor(s):: Muhammad A. Alam

  16. Lecture 7: Connection to the Bottom Up Approach

    23 Sep 2008 | | Contributor(s):: Mark Lundstrom

    While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.

  17. Lecture 6: Quantum Transport in Nanoscale FETs

    12 Sep 2008 | | Contributor(s):: Mark Lundstrom

    The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use...

  18. ECE 612 Lecture 4: Polysilicon Gates/QM Effects

    12 Sep 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Review, 2) Workfunctionof poly gates,3) CV with poly depletion,4) Quantum mechanics and VT,5) Quantum mechanics and C,6) Summary.

  19. ECE 612 Introductory Lecture

    10 Sep 2008 | | Contributor(s):: Mark Lundstrom

  20. Lecture 3B: The Ballistic MOSFET

    10 Sep 2008 | | Contributor(s):: Mark Lundstrom

    This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.