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ECE 612 Lecture 19: Series Resistance
17 Oct 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 18: VT Engineering
17 Oct 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 17: Device Scaling
17 Oct 2006 | | Contributor(s):: Mark Lundstrom
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The Limits of CMOS Scaling from a Power-Constrained Technology Optimization Perspective
17 Oct 2006 | | Contributor(s):: David J. Frank
As CMOS scaling progresses, it is becoming very clear that power dissipation plays a dominant role in limiting how far scaling can go. This talk will briefly describe the various physical effects that arise at the limits of scaling, and will then turn to an analysis of scaling in the presence of...
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ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances
02 Oct 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 16: 2D Electrostatics, Part II
02 Oct 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 15: 2D Electrostatics, Part I
02 Oct 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 14: Effective Mobility
02 Oct 2006 | | Contributor(s):: Mark Lundstrom
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Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
28 Sep 2006 | | Contributor(s):: Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon- on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the...
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Device Physics and Simulation of Silicon Nanowire Transistors
28 Sep 2006 | | Contributor(s):: Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...
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ECE 612 Lecture 12: Subthreshold Conduction
25 Sep 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 8: MOSFET IV, Part II
11 Sep 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 10: The Ballistic MOSFET
18 Sep 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 11: The Quasi-ballistic MOSFET
18 Sep 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 7: MOSFET IV, Part I
11 Sep 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 6: Quantum Mechanical Effects
05 Sep 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 9: MOSFET IV, Part III
12 Sep 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 5: Poly Si Gate MOS Capacitors
05 Sep 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 4: MOS Capacitors
05 Sep 2006 | | Contributor(s):: Mark Lundstrom
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Nanoelectronic Architectures
24 Feb 2005 | | Contributor(s):: Greg Snider
Nanoelectronic architectures at this point are necessarily speculative: We are still evaluating many different approaches to fabrication and are exploring unconventional devices made possible at the nano scale. This talk will start off with a review of some "classical" crossbar structures using...