Tags: nanotransistors

Description

 

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

 

Resources (361-380 of 449)

  1. ECE 612 Lecture 19: Series Resistance

    17 Oct 2006 | | Contributor(s):: Mark Lundstrom

  2. ECE 612 Lecture 18: VT Engineering

    17 Oct 2006 | | Contributor(s):: Mark Lundstrom

  3. ECE 612 Lecture 17: Device Scaling

    17 Oct 2006 | | Contributor(s):: Mark Lundstrom

  4. The Limits of CMOS Scaling from a Power-Constrained Technology Optimization Perspective

    17 Oct 2006 | | Contributor(s):: David J. Frank

    As CMOS scaling progresses, it is becoming very clear that power dissipation plays a dominant role in limiting how far scaling can go. This talk will briefly describe the various physical effects that arise at the limits of scaling, and will then turn to an analysis of scaling in the presence of...

  5. ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances

    02 Oct 2006 | | Contributor(s):: Mark Lundstrom

  6. ECE 612 Lecture 16: 2D Electrostatics, Part II

    02 Oct 2006 | | Contributor(s):: Mark Lundstrom

  7. ECE 612 Lecture 15: 2D Electrostatics, Part I

    02 Oct 2006 | | Contributor(s):: Mark Lundstrom

  8. ECE 612 Lecture 14: Effective Mobility

    02 Oct 2006 | | Contributor(s):: Mark Lundstrom

  9. Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches

    28 Sep 2006 | | Contributor(s):: Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic

    In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon- on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the...

  10. Device Physics and Simulation of Silicon Nanowire Transistors

    28 Sep 2006 | | Contributor(s):: Jing Wang

    As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

  11. ECE 612 Lecture 12: Subthreshold Conduction

    25 Sep 2006 | | Contributor(s):: Mark Lundstrom

  12. ECE 612 Lecture 8: MOSFET IV, Part II

    11 Sep 2006 | | Contributor(s):: Mark Lundstrom

  13. ECE 612 Lecture 10: The Ballistic MOSFET

    18 Sep 2006 | | Contributor(s):: Mark Lundstrom

  14. ECE 612 Lecture 11: The Quasi-ballistic MOSFET

    18 Sep 2006 | | Contributor(s):: Mark Lundstrom

  15. ECE 612 Lecture 7: MOSFET IV, Part I

    11 Sep 2006 | | Contributor(s):: Mark Lundstrom

  16. ECE 612 Lecture 6: Quantum Mechanical Effects

    05 Sep 2006 | | Contributor(s):: Mark Lundstrom

  17. ECE 612 Lecture 9: MOSFET IV, Part III

    12 Sep 2006 | | Contributor(s):: Mark Lundstrom

  18. ECE 612 Lecture 5: Poly Si Gate MOS Capacitors

    05 Sep 2006 | | Contributor(s):: Mark Lundstrom

  19. ECE 612 Lecture 4: MOS Capacitors

    05 Sep 2006 | | Contributor(s):: Mark Lundstrom

  20. Nanoelectronic Architectures

    24 Feb 2005 | | Contributor(s):: Greg Snider

    Nanoelectronic architectures at this point are necessarily speculative: We are still evaluating many different approaches to fabrication and are exploring unconventional devices made possible at the nano scale. This talk will start off with a review of some "classical" crossbar structures using...