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2005 Molecular Conduction and Sensors Workshop
0.0 out of 5 stars
25 May 2005 | Workshops
This is the 3rd in a series of annual workshops on Molecular Conduction. The prior workshops have been at Purdue University, W. Lafayette, IN (2003) and Nothwestern University, Evanston, IL...
2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008 | Workshops | Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic...
2010 NCN@Purdue Summer School: Electronics from the Bottom Up
18 Jan 2011 | Workshops
Electronics from the Bottom Up seeks to bring a new perspective to electronic devices – one that is designed to help realize the opportunities that nanotechnology presents.
A Gentle Introduction to Nanotechnology and Nanoscience
4.5 out of 5 stars
13 Feb 2006 | Online Presentations | Contributor(s): Mark A. Ratner
While the Greek root nano just means dwarf, the nanoscale has become a giant focus of contemporary science and technology. We will examine the fundamental issues underlying the excitement...
A MATLAB code for Hartree Fock calculation of H-H ground state bondlength and energy using STO-4G
5.0 out of 5 stars
08 Aug 2006 | Downloads | Contributor(s): Amritanshu Palaria
Hartree Fock (HF) theory is one of the basic theories underlying the current understanding of the electronic structure of materials. It is a simple non-relativistic treatment of many electron...
A Personal Quest for Information
13 Apr 2004 | Online Presentations | Contributor(s): Vwani P. Roychowdhury
This talk will report results and conclusions from my personal investigations into several different disciplines, carried out with the unifying intent of uncovering some of the fundamental...
A Primer on Semiconductor Device Simulation
23 Jan 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation
tool intelligently, one must know what's "under the...
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study
the effect of channel access geometries on device performance. This simulation scheme solves the...
A Short Overview of the NEEDS Initiative
06 Jun 2016 | Online Presentations | Contributor(s): Mark Lundstrom
The talk is a brief overview of the program that discusses the rationale, status, and plans for NEEDS.
A Tutorial for Nanoelectronics Simulation Tools
03 Jul 2007 | Online Presentations | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to some of the available simulators. The simulators discussed are FETToy, nanoMOS, Schred, CNTbands, and QDot Lab. For each simulator, a brief...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
08 Aug 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
An Electrical Engineering Perspective on Molecular Electronics
4.0 out of 5 stars
26 Oct 2005 | Online Presentations | Contributor(s): Mark Lundstrom
After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths that are less than...
Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org
16 Dec 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the...
Ballistic Nanotransistors - Learning Module
07 Dec 2005 | Series | Contributor(s): Mark Lundstrom
This resource is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights...
Band Structure Lab Demonstration: Bulk Strain
12 Jun 2009 | Animations | Contributor(s): Gerhard Klimeck
This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.
Bandstructure in Nanoelectronics
01 Nov 2005 | Online Presentations | Contributor(s): Gerhard Klimeck
This presentation will highlight, for nanoelectronic device examples, how the effective mass approximation breaks down and why the quantum mechanical nature of the atomically resolved material...
BJT Lab: h-Parameters Calculation Exercise
07 Jul 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
In this exercise students are required to obtain the appropriate input and output parameters to extract the small signal h-parameters in common-base configuration. Afterwards they need to derive...
BNC Annual Research Symposium: Nanoelectronics and Semiconductor Devices
23 Apr 2007 | Online Presentations | Contributor(s): David Janes
This presentation is part of a collection of presentations describing the projects, people, and capabilities enhanced by research performed in the Birck Center, and a look at plans for the...
Can numerical “experiments” INSPIRE physical experiments?
20 Dec 2007 | Online Presentations | Contributor(s): Supriyo Datta
This presentation was one of 13 presentations in the one-day forum,
"Excellence in Computer Simulation," which brought together a broad
set of experts to reflect on the future of...
Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006 | Papers | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube
electronic devices and in identifying potential applications has occurred. In a nanotube,