
ECE 656 Lecture 14: Solving the BTE: 1D/RTA
07 Oct 2009   Contributor(s):: Mark Lundstrom
Outline:The RTA Solving the BTE: driftSolving the BTE: diffusionEnergydependent scattering timeRelation to LandauerDiscussionSummary

ECE 656 Lecture 11: Discussion
07 Oct 2009   Contributor(s):: Mark Lundstrom
Outline:Ptype conductors and thermoelectricsZT figure of meritMaximizing the “power factor”TE parameters for nondegenerate semiconductor

ECE 656 Lecture 15: Solving the BTE  General Solution for B = 0
06 Oct 2009   Contributor(s):: Mark Lundstrom
General solution 2) Current equation 3) Coupled current equations 4) The RTA 5) Summary

ECE 656 Lecture 17: BTE and Landauer
02 Oct 2009   Contributor(s):: Mark Lundstrom
Outline:BTE reviewTransport DistributionConnection to LandauerModesMeanfreepathSummary

ECE 656 Lecture 10: The DriftDiffusion Equation
30 Sep 2009   Contributor(s):: Mark Lundstrom
Outline:Transport in the bulkThe DD equationIndicial notationDD equation with Bfield

ECE 656 Lecture 9: Coupled Current Equations
28 Sep 2009   Contributor(s):: Mark Lundstrom
Outline:Onsager relationsMeasurement considerationsThermoelectric devices

ECE 656 Lecture 8: Thermoelectric Effects
27 Sep 2009   Contributor(s):: Mark Lundstrom
Outline:IntroductionOne energy level formulationDistribution of energy levelsDiscussionSummary

ECE 656 Lecture 7: 2 and 3D Resistors
27 Sep 2009   Contributor(s):: Mark Lundstrom
Outline:Another view of the same problem2D resistorsDiscussion3D resistorsSummary

ECE 656 Lecture 13: Solving the BTE: equilibrium and ballistic
22 Sep 2009   Contributor(s):: Mark Lundstrom
Outline:Quick reviewEquilibrium BTEBallistic BTEDiscussionSummary

Metal Oxide Nanowires as Gas Sensing Elements: from Basic Research to Real World Applications
21 Sep 2009   Contributor(s):: andrei kolmakov
Quasi 1D metal oxide single crystal chemiresistors are close to occupy their specific niche in the real world of solid state sensorics. Potentially, the major advantage of this kind of sensors with respect to available granular thin film sensors will be their size and stable, reproducible and...

ECE 656 Lecture 12: Boltzmann Transport Equation
18 Sep 2009   Contributor(s):: Mark Lundstrom
Outline:IntroductionSemiclassical electron dynamics Boltzmann Transport Equation (BTE) ScatteringDiscussionSummary

ECE 656 Lecture 6: Discussion
18 Sep 2009   Contributor(s):: Mark Lundstrom
OutlineQuantum confinement and effective massBulk 1D transport and mfpPeriodic vs. Box boundary conditionsThermal velocities"Ballistic mobility"

ECE 656 Lecture 5: 1D Resistors
14 Sep 2009   Contributor(s):: Mark Lundstrom
Outline:Review1D ballistic resistors1D diffusive resistorsDiscussionSummary

ECE 656 Lecture 4: Density of States  Density of Modes
14 Sep 2009   Contributor(s):: Mark Lundstrom
Outline:Density of states Example: graphene Density of modes Example: graphene Summary

ECE 656 Lecture 3: General Model for Transport
03 Sep 2009   Contributor(s):: Mark Lundstrom
Outline:General model for lowfield transportModesTransmissionLinear (near equilibrium) transportSummary

ECE 656 Lecture 2: Sums in kspace/Integrals in Energy Space
01 Sep 2009   Contributor(s):: Mark Lundstrom
Outline:Density of states in kspace Example Working in energy space Discussion Summary

Aug 27 2009
The Transistor: From Shockley, Bardeen, and Brattain to single molecules and atoms
Sven Rogge,Kavli Institute for Nanoscience, Delft University of Technology, The NetherlandsIn this lecture we will review the working principles of transistors and their evolution from the first...
http://nanohub.org/events/details/254

ECE 656 Lecture 1: Bandstructure Review
26 Aug 2009   Contributor(s):: Mark Lundstrom
Outline:Bandstructure in bulk semiconductorsQuantum confinementSummary

ECE 656 Introductory Lecture
26 Aug 2009   Contributor(s):: Mark Lundstrom

ECE 656: Electronic Transport in Semiconductors (Fall 2009)
26 Aug 2009   Contributor(s):: Mark Lundstrom
This course develops a basic understanding of the theory of charge carrier transport in semiconductors and semiconductor devices and an ability to apply it to the anslysis of experiments and devices.