Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

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  1. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | Papers | Contributor(s): Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...

    http://nanohub.org/resources/18769

  2. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

    28 Jun 2013 | Papers | Contributor(s): Kausar Banoo

    Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators...

    http://nanohub.org/resources/18767

  3. Modeling Quantum Transport in Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore,...

    http://nanohub.org/resources/18744

  4. Nanoscale MOSFETS: Physics, Simulation and Design

    28 Jun 2013 | Papers | Contributor(s): Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...

    http://nanohub.org/resources/18763

  5. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed the channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...

    http://nanohub.org/resources/18747

  6. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    28 Jun 2013 | Papers | Contributor(s): Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive...

    http://nanohub.org/resources/18765

  7. ECE 695A Lecture 18: DC-IV and Charge Pumping Methods

    25 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Recall: Properties of Interface Defects Flux-based method 1: Direct Current-Voltage method Flux-based method 2: Charge pumping method Conclusions

    http://nanohub.org/resources/17023

  8. ECE 695A Lecture 16: Review Questions

    22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Question What is the difference between hot atom dissociation vs. cold atom dissociation?. Many experiments are reported at 77K and 295K. Why these temperatures?. Why is there such...

    http://nanohub.org/resources/17014

  9. ECE 695A Lecture 17: Subthreshold and Idlin Methods

    21 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    http://nanohub.org/resources/16965

  10. ECE 695A Lecture 15R: Review Questions

    20 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI? What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments....

    http://nanohub.org/resources/16933

  11. ECE 695A Lecture 14a: Voltage Dependent HCI I

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal...

    http://nanohub.org/resources/16895

  12. ECE 695A Lecture 14b: Voltage Dependent HCI II

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and Empirical Observations Theory of Hot Carriers: Hydrodynamic Model Theory of Hot Carriers: Monte Carlo Model Theory of Hot Carriers: Universal...

    http://nanohub.org/resources/16896

  13. ECE 695A Lecture 14R: Review Questions

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions Why is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current? What are the three methods of...

    http://nanohub.org/resources/16897

  14. ECE 695A Lecture 15: Off-state HCI Degradation

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: ON vs. OFF State HCI Degradation Origin of hot carriers at off-state SiH vs. SiO – who is getting broken? Voltage acceleration factors by scaling Conclusions

    http://nanohub.org/resources/16919

  15. ECE 695A Lecture 16: Temperature Dependence of HCI

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Empirical observations regarding HCI Theory of bond dissociation: MVE vs. RRK Hot carrier dissociation of SiH bonds Hot carrier dissociation of SiO bonds Conclusions

    http://nanohub.org/resources/16920

  16. ECE 695A Lecture 13: Introductory Lecture on HCI Degradation

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and features of HCI Degradation Phenomenological observations Origin of Hot carriers Theory of Si-H Bond Dissociation Theory of Si-O Bond...

    http://nanohub.org/resources/16887

  17. ECE 695A Lecture 13R: Review Questions

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Both SiH and SiO are involved in HCI degradation. Give two evidences. Why doesn’t HCI occur during NBTI stress condition? I suggested that HCI curve can shifted...

    http://nanohub.org/resources/16888

  18. ECE 695A Lecture 5R: Review Questions

    12 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: What is the difference between coordination and composition? Is periodicity essential for a defect-free structure? Why can’t the amorphous material have arbitrary ring...

    http://nanohub.org/resources/16788

  19. ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    http://nanohub.org/resources/16787

  20. ECE 695A Lecture 11R: Review Questions

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Does Einstein relationship hold for activated diffusion? People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you...

    http://nanohub.org/resources/16786