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Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

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  1. ECE 695A Lecture 16: Temperature Dependence of HCI

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Empirical observations regarding HCI Theory of bond dissociation: MVE vs. RRK Hot carrier dissociation of SiH bonds Hot carrier dissociation of SiO bonds Conclusions

    http://nanohub.org/resources/16920

  2. ECE 695A Lecture 13: Introductory Lecture on HCI Degradation

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background and features of HCI Degradation Phenomenological observations Origin of Hot carriers Theory of Si-H Bond Dissociation Theory of Si-O Bond...

    http://nanohub.org/resources/16887

  3. ECE 695A Lecture 13R: Review Questions

    19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Both SiH and SiO are involved in HCI degradation. Give two evidences. Why doesn’t HCI occur during NBTI stress condition? I suggested that HCI curve can shifted...

    http://nanohub.org/resources/16888

  4. ECE 695A Lecture 5R: Review Questions

    12 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: What is the difference between coordination and composition? Is periodicity essential for a defect-free structure? Why can’t the amorphous material have arbitrary ring...

    http://nanohub.org/resources/16788

  5. ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    http://nanohub.org/resources/16787

  6. ECE 695A Lecture 11R: Review Questions

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Does Einstein relationship hold for activated diffusion? People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you...

    http://nanohub.org/resources/16786

  7. ECE 695A Lecture 12: Field Dependence of NBTI

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background: Field dependent degradation Components of field-dependent dissociation: Interpreting experiments Voltage acceleration factors Conclusion

    http://nanohub.org/resources/16789

  8. ECE 695A Lecture 12R: Review Questions

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength. How does the dissociation...

    http://nanohub.org/resources/16790

  9. ECE 695A Lecture 9R: Review Questions

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Does NBTI power-exponent depend on voltage or temperature? Do you expect the NBTI power-exponent to be larger or smaller if trapping is important? How does one know that...

    http://nanohub.org/resources/16778

  10. ECE 695A Lecture 11: Temperature Dependence of NBTI

    07 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Review: Temperature activation & NBTI Temperature dependent forward/reverse rates Temperature dependence of diffusion coefficient Material dependence of activation...

    http://nanohub.org/resources/16774

  11. ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies

    06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: NBTI stress and relaxation by R-D model Frequency independence and lifetime projection Duty cycle dependence The magic of measurement Conclusions

    http://nanohub.org/resources/16668

  12. ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase

    06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Background: Time-dependent degradation The Reaction-Diffusion model Approximate solution to R-D model in stress phase Degradation free transistors Conclusions

    http://nanohub.org/resources/16667

  13. ECE 695A Lecture 6: Defects in the Bulk and at Interfaces

    01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Strain in materials/origin of defects Examples: bulk defects Examples: interface defects Measurements Conclusions

    http://nanohub.org/resources/16608

  14. ECE 695A Lecture 8: Phenomenological Observations for NBTI

    01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Qualitative observations Time, voltage, temperature dependencies Material dependence Circuit implications

    http://nanohub.org/resources/16665

  15. ECE 695A Lecture 8R: Review Questions

    01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    What is the distinction between BTI and NBTI phenomena? What does it mean that a process is thermally activated? What is the difference between parametric failure and catastrophic failure?...

    http://nanohub.org/resources/16666

  16. ECE 695A Lecture 7: Trapping in Pre-existing Traps

    29 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Pre-existing vs. stress-induced traps Voltage-shift in pre-existing bulk/interface traps Random Telegraph Noise, 1/f noise Conclusion

    http://nanohub.org/resources/16609

  17. ECE 695A Lecture 7A: Appendix - Theory of Stochastic Distribution

    29 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Supplemental information for Lecture 7: Trapping in Pre-existing Traps

    http://nanohub.org/resources/16611

  18. ECE 695A Lecture 7R: Review Questions

    29 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Why are there more types of defects in crystals than in amorphous material? From the perspective of Maxwell’s relation, how does H reduce defect density? Why is HfO2 so...

    http://nanohub.org/resources/16615

  19. ECE 695A Reliability Physics of Nanotransistors

    17 Jan 2013 | Courses | Contributor(s): Muhammad Alam

    This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a...

    http://nanohub.org/resources/16560

  20. ECE 695A Lecture 1: Reliability of Nanoelectronic Devices

    11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Outline: Evolving Landscape of Electronics Performance, Variability, and Reliability Classification of Reliability Course Information Conclusions

    http://nanohub.org/resources/16511

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