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Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

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  1. ECE 659 Lecture 7: Hall Effect II

    03 Feb 2009 | Online Presentations | Contributor(s): Supriyo Datta

    http://nanohub.org/resources/6215

  2. ECE 659 Lecture 6: Hall Effect I

    03 Feb 2009 | Online Presentations | Contributor(s): Supriyo Datta

    http://nanohub.org/resources/6212

  3. ECE 659 Quantum Transport: Atom to Transistor

    27 Jan 2009 | Courses | Contributor(s): Supriyo Datta

    Spring 2009 This is a newly produced version of the course that was formerly available. We would greatly appreciate your feedback regarding the new format and contents. Traditionally...

    http://nanohub.org/resources/6172

  4. ECE 659 Lecture 5: Where is the Resistance?

    27 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta

    http://nanohub.org/resources/6169

  5. ECE 659 Lecture 4: Landauer Model

    27 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta

    http://nanohub.org/resources/6166

  6. ECE 659 Lecture 1: Introduction

    21 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta

    http://nanohub.org/resources/6145

  7. ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport

    21 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta

    http://nanohub.org/resources/6148

  8. ECE 659 Lecture 3: Mobility

    21 Jan 2009 | Online Presentations | Contributor(s): Supriyo Datta

    http://nanohub.org/resources/6151

  9. ECE 612 Lecture 27: Heterojunction Bipolar Transistors

    15 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/6047

  10. ECE 612 Lecture 25: SOI Electrostatics

    08 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1. Introduction, 2. General solution, 3. VTF vs. VGB, 4. Subthreshold slope, 5. Double gate (DG) SOI, 6. Recap, 7. Discussion, 8. Summary.

    http://nanohub.org/resources/6014

  11. ECE 612 Lecture 22: CMOS Circuit Essentials

    24 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) The CMOS inverter, 2) Speed, 3) Power, 4) Circuit performance, 5) Metrics, 6) Limits. This lecture is an overview of CMOS circuits. For a more detailed presentation, the...

    http://nanohub.org/resources/5927

  12. ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET

    14 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    Guest lecturer: Muhammad A. Alam.

    http://nanohub.org/resources/5861

  13. ECE 612 Lecture 19: Device Variability

    14 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Sources of variability, 2) Random dopantfluctuations (RDF), 3) Line edge roughness (LER), 4) Impact on design.

    http://nanohub.org/resources/5856

  14. Lecture 2: Thresholds, Islands, and Fractals

    04 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via...

    http://nanohub.org/resources/5698

  15. Lecture 1: Percolation in Electronic Devices

    04 Nov 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the...

    http://nanohub.org/resources/5697

  16. ECE 612 Lecture 17: Gate Resistance and Interconnects

    03 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Gate Resistance, 2) Interconnects, 3) ITRS, 4) Summary.

    http://nanohub.org/resources/5700

  17. Percolation Theory

    03 Nov 2008 | Courses | Contributor(s): Muhammad A. Alam

    The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon-...

    http://nanohub.org/resources/5660

  18. ECE 612 Lecture 16: MOSFET Leakage

    31 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) MOSFET leakage components, 2) Band to band tunneling, 3) Gate-induced drain leakage, 4) Gate leakage, 5) Scaling and ITRS, 6) Summary.

    http://nanohub.org/resources/5688

  19. ECE 612 Lecture 15: Series Resistance (and effective channel length)

    29 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Effect on I-V, 2) Series resistance components, 3) Metal-semiconductor resistance, 4) Other series resistance components, 5) Discussion, 6) Effective Channel Length, 7) Summary.

    http://nanohub.org/resources/5675

  20. ECE 612 Lecture 14: VT Engineering

    28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) VT Specification, 2) Uniform Doping, 3) Delta-function doping, xC = 0, 4) Delta-function doping, xC > 0, 5) Stepwise uniform, 6) Integral solution. The doping profiles in...

    http://nanohub.org/resources/5670

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