
ECE 659 Lecture 6: Hall Effect I
03 Feb 2009  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/6212

ECE 659 Quantum Transport: Atom to Transistor
27 Jan 2009  Courses  Contributor(s): Supriyo Datta
Spring 2009
This is a newly produced version of the course that was
formerly available.
We would greatly appreciate your feedback regarding the new format and contents.
Traditionally...
http://nanohub.org/resources/6172

ECE 659 Lecture 5: Where is the Resistance?
27 Jan 2009  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/6169

ECE 659 Lecture 4: Landauer Model
27 Jan 2009  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/6166

ECE 659 Lecture 1: Introduction
21 Jan 2009  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/6145

ECE 659 Lecture 2: Molecular, Ballistic and Diffusive Transport
21 Jan 2009  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/6148

ECE 659 Lecture 3: Mobility
21 Jan 2009  Online Presentations  Contributor(s): Supriyo Datta
http://nanohub.org/resources/6151

ECE 612 Lecture 27: Heterojunction Bipolar Transistors
15 Dec 2008  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/6047

ECE 612 Lecture 25: SOI Electrostatics
08 Dec 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1. Introduction,
2. General solution,
3. VTF vs. VGB,
4. Subthreshold slope,
5. Double gate (DG) SOI,
6. Recap,
7. Discussion,
8. Summary.
http://nanohub.org/resources/6014

ECE 612 Lecture 22: CMOS Circuit Essentials
24 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) The CMOS inverter,
2) Speed,
3) Power,
4) Circuit performance,
5) Metrics,
6) Limits.
This lecture is an overview of CMOS circuits. For a more detailed presentation, the...
http://nanohub.org/resources/5927

ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
14 Nov 2008  Online Presentations  Contributor(s): Muhammad A. Alam
Guest lecturer: Muhammad A. Alam.
http://nanohub.org/resources/5861

ECE 612 Lecture 19: Device Variability
14 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Sources of variability,
2) Random dopantfluctuations (RDF),
3) Line edge roughness (LER),
4) Impact on design.
http://nanohub.org/resources/5856

Lecture 2: Thresholds, Islands, and Fractals
04 Nov 2008  Online Presentations  Contributor(s): Muhammad A. Alam
Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via...
http://nanohub.org/resources/5698

Lecture 1: Percolation in Electronic Devices
04 Nov 2008  Online Presentations  Contributor(s): Muhammad A. Alam
Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the...
http://nanohub.org/resources/5697

ECE 612 Lecture 17: Gate Resistance and Interconnects
03 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Gate Resistance,
2) Interconnects,
3) ITRS,
4) Summary.
http://nanohub.org/resources/5700

Percolation Theory
03 Nov 2008  Courses  Contributor(s): Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon...
http://nanohub.org/resources/5660

ECE 612 Lecture 16: MOSFET Leakage
31 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) MOSFET leakage components,
2) Band to band tunneling,
3) Gateinduced drain leakage,
4) Gate leakage,
5) Scaling and ITRS,
6) Summary.
http://nanohub.org/resources/5688

ECE 612 Lecture 15: Series Resistance (and effective channel length)
29 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Effect on IV,
2) Series resistance components,
3) Metalsemiconductor resistance,
4) Other series resistance components,
5) Discussion,
6) Effective Channel Length,
7) Summary.
http://nanohub.org/resources/5675

ECE 612 Lecture 14: VT Engineering
28 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) VT Specification,
2) Uniform Doping,
3) Deltafunction doping, xC = 0,
4) Deltafunction doping, xC > 0,
5) Stepwise uniform,
6) Integral solution.
The doping profiles in...
http://nanohub.org/resources/5670

ECE 612 Lecture 12: 2D Electrostatics
28 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Consequences of 2D electrostatics,
2) 2D Poisson equation,
3) Charge sharing model,
4) Barrier lowering,
5) 2D capacitor model,
6) Geometric screening length,
7) Discussion,
8)...
http://nanohub.org/resources/5624