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ECE 612 Lecture 14: VT Engineering
0.0 out of 5 stars
28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) VT Specification,
2) Uniform Doping,
3) Delta-function doping, xC = 0,
4) Delta-function doping, xC > 0,
5) Stepwise uniform,
6) Integral solution.
The doping profiles in...
ECE 612 Lecture 12: 2D Electrostatics
1) Consequences of 2D electrostatics,
2) 2D Poisson equation,
3) Charge sharing model,
4) Barrier lowering,
5) 2D capacitor model,
6) Geometric screening length,
ECE 612 Lecture 11: Effective Mobility
5.0 out of 5 stars
20 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
1) Review of mobility,
3) Physics of the effective mobility,
4) Measuring effective mobility,
ECE 612 Lecture 6: MOSFET IV: Velocity saturation
07 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Review,
2) Bulk charge theory (approximate),
3) Velocity saturation theory,
ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge
Outline: 1) Introduction,
2) Square law theory,
3) PN junction effects on MOSFETs,
4) Bulk charge theory (exact),
29 Sep 2008 | Online Presentations | Contributor(s): Muhammad A. Alam
Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally...
Lecture 6: Quantum Transport in Nanoscale FETs
12 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture...
ECE 612 Lecture 4: Polysilicon Gates/QM Effects
Outline: 1) Review, 2) Workfunctionof poly gates,
3) CV with poly depletion,
4) Quantum mechanics and VT,
5) Quantum mechanics and C,
ECE 612 Introductory Lecture
10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Lecture 3A: The Ballistic MOSFET
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new...
Lecture 3B: The Ballistic MOSFET
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our...
ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Short review,
2) Gate voltage / surface potential relation,
3) The flatbandvoltage,
4) MOS capacitance vs. voltage,
5) Gate voltage and inversion layer charge.
ECE 612 Lecture 2: 1D MOS Electrostatics II
Outline: 1) Review,
2) ‘Exact’ solution (bulk),
3) Approximate solution (bulk),
4) Approximate solution (ultra-thin body),
ECE 612 Lecture 1: 1D MOS Electrostatics I
Outline: 1) Review of some fundamentals,
2) Identify next steps.
Lecture 2: Elementary Theory of the Nanoscale MOSFET
08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent...
Lecture 4: Scattering in Nanoscale MOSFETs
No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective...
Lecture 5: Application to State-of-the-Art FETs
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the...
ECE 612: Nanoscale Transistors (Fall 2008)
27 Aug 2008 | Courses | Contributor(s): Mark Lundstrom
Additional material related to the topics discussed in this course course is available at https://nanohub.org/courses/NT