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ECE 659 Lecture 3: Mobility
out of 5 stars
21 Jan 2009 | | Contributor(s):: Supriyo Datta
ECE 612 Lecture 27: Heterojunction Bipolar Transistors
15 Dec 2008 | | Contributor(s):: Mark Lundstrom
ECE 612 Lecture 25: SOI Electrostatics
08 Dec 2008 | | Contributor(s):: Mark Lundstrom
Outline:1. Introduction,2. General solution, 3. VTF vs. VGB,4. Subthreshold slope,5. Double gate (DG) SOI,6. Recap,7. Discussion,8. Summary.
ECE 612 Lecture 22: CMOS Circuit Essentials
24 Nov 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) The CMOS inverter,2) Speed,3) Power,4) Circuit performance,5) Metrics,6) Limits.This lecture is an overview of CMOS circuits. For a more detailed presentation, the following lectures from the Fall 2006 teaching of this course should be viewed:Lecture 24: CMOS Circuits, Part I (Fall...
ECE 612 Lecture 20: Broad Overview of Reliability of Semiconductor MOSFET
14 Nov 2008 | | Contributor(s):: Muhammad A. Alam
Guest lecturer: Muhammad A. Alam.
ECE 612 Lecture 19: Device Variability
14 Nov 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Sources of variability,2) Random dopantfluctuations (RDF),3) Line edge roughness (LER),4) Impact on design.
Lecture 2: Thresholds, Islands, and Fractals
04 Nov 2008 | | Contributor(s):: Muhammad A. Alam
Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via elementary examples. These three concepts will form the theoretical foundation for discussion in...
Lecture 1: Percolation in Electronic Devices
Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity of these phenomena however, the concepts percolation theory provides a broad theoretical framework...
ECE 612 Lecture 17: Gate Resistance and Interconnects
03 Nov 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Gate Resistance,2) Interconnects,3) ITRS,4) Summary.
03 Nov 2008 | | Contributor(s):: Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon- or metal crystals in nanocrystal Flash memory, the number of Nanowires in a flexible nanoNET...
ECE 612 Lecture 16: MOSFET Leakage
31 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) MOSFET leakage components,2) Band to band tunneling,3) Gate-induced drain leakage,4) Gate leakage,5) Scaling and ITRS,6) Summary.
ECE 612 Lecture 15: Series Resistance (and effective channel length)
29 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Effect on I-V,2) Series resistance components,3) Metal-semiconductor resistance,4) Other series resistance components,5) Discussion,6) Effective Channel Length,7) Summary.
ECE 612 Lecture 14: VT Engineering
28 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) VT Specification,2) Uniform Doping,3) Delta-function doping, xC = 0,4) Delta-function doping, xC > 0,5) Stepwise uniform,6) Integral solution.The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of how non-uniform doping profiles affect...
ECE 612 Lecture 12: 2D Electrostatics
Outline:1) Consequences of 2D electrostatics,2) 2D Poisson equation,3) Charge sharing model,4) Barrier lowering,5) 2D capacitor model,6) Geometric screening length,7) Discussion,8) Summary.
ECE 612 Lecture 11: Effective Mobility
20 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Review of mobility,2) “Effective”mobility,3) Physics of the effective mobility,4) Measuring effective mobility,5) Discussion,6) Summary.
ECE 612 Lecture 6: MOSFET IV: Velocity saturation
07 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) Review,2) Bulk charge theory (approximate),3) Velocity saturation theory,4) Summary.
ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge
Outline: 1) Introduction,2) Square law theory,3) PN junction effects on MOSFETs,4) Bulk charge theory (exact),5) Summary.
29 Sep 2008 | | Contributor(s):: Muhammad A. Alam
Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008 | | Contributor(s):: Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally derived from the generic model for a nano-device to show the connection explicitly.
Lecture 6: Quantum Transport in Nanoscale FETs
12 Sep 2008 | | Contributor(s):: Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture presents quantum transport simulations that display the internal physics of nanoscale MOSFETs. We use...