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Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

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  1. ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge

    07 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Introduction, 2) Square law theory, 3) PN junction effects on MOSFETs, 4) Bulk charge theory (exact), 5) Summary.

    http://nanohub.org/resources/5365

  2. Introductory Comments

    29 Sep 2008 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5502

  3. Lecture 7: Connection to the Bottom Up Approach

    23 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally...

    http://nanohub.org/resources/5314

  4. Lecture 6: Quantum Transport in Nanoscale FETs

    12 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture...

    http://nanohub.org/resources/5313

  5. ECE 612 Lecture 4: Polysilicon Gates/QM Effects

    12 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review, 2) Workfunctionof poly gates, 3) CV with poly depletion, 4) Quantum mechanics and VT, 5) Quantum mechanics and C, 6) Summary.

    http://nanohub.org/resources/5364

  6. ECE 612 Introductory Lecture

    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/5340

  7. Lecture 3A: The Ballistic MOSFET

    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new...

    http://nanohub.org/resources/5309

  8. Lecture 3B: The Ballistic MOSFET

    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.

    http://nanohub.org/resources/5310

  9. Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up

    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our...

    http://nanohub.org/resources/5207

  10. ECE 612 Lecture 3: MOS Capacitors

    09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Short review, 2) Gate voltage / surface potential relation, 3) The flatbandvoltage, 4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

    http://nanohub.org/resources/5363

  11. ECE 612 Lecture 2: 1D MOS Electrostatics II

    09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review, 2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.

    http://nanohub.org/resources/5362

  12. ECE 612 Lecture 1: 1D MOS Electrostatics I

    09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review of some fundamentals, 2) Identify next steps.

    http://nanohub.org/resources/5341

  13. Lecture 2: Elementary Theory of the Nanoscale MOSFET

    08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    A very simple (actually overly simple) treatment of the nanoscale MOSFET. This lecture conveys the essence of the approach using only simple mathematics. It sets the stage for the subsequent...

    http://nanohub.org/resources/5308

  14. Lecture 4: Scattering in Nanoscale MOSFETs

    08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective...

    http://nanohub.org/resources/5311

  15. Lecture 5: Application to State-of-the-Art FETs

    08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the...

    http://nanohub.org/resources/5312

  16. ECE 612: Nanoscale Transistors (Fall 2008)

    27 Aug 2008 | Courses | Contributor(s): Mark Lundstrom

            Fall 2008 This course examines the device physics of advanced transistors and the process, device, circuit, and systems...

    http://nanohub.org/resources/5328

  17. Introduction: Physics of Nanoscale MOSFETs

    26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    NCN@Purdue Summer School 2008 National Science Fondation Intel Corporation NCN@Purdue Summer School 2008 National Science Fondation Intel Corporation

    http://nanohub.org/resources/5317

  18. 2008 NCN@Purdue Summer School: Electronics from the Bottom Up

    26 Aug 2008 | Workshops | Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom

    Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic...

    http://nanohub.org/resources/5305

  19. Physics of Nanoscale MOSFETs

    26 Aug 2008 | Courses | Contributor(s): Mark Lundstrom

    Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of...

    http://nanohub.org/resources/5306

  20. Lecture 1: Review of MOSFET Fundamentals

    26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and...

    http://nanohub.org/resources/5307

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