
ECE 612 Lecture 17: Gate Resistance and Interconnects
03 Nov 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Gate Resistance,
2) Interconnects,
3) ITRS,
4) Summary.
http://nanohub.org/resources/5700

Percolation Theory
03 Nov 2008  Courses  Contributor(s): Muhammad A. Alam
The electronic devices these days have become so small that the number of dopant atoms in the channel of a MOFET transistor, the number of oxide atoms in its gate dielectric, the number silicon...
http://nanohub.org/resources/5660

ECE 612 Lecture 16: MOSFET Leakage
31 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) MOSFET leakage components,
2) Band to band tunneling,
3) Gateinduced drain leakage,
4) Gate leakage,
5) Scaling and ITRS,
6) Summary.
http://nanohub.org/resources/5688

ECE 612 Lecture 15: Series Resistance (and effective channel length)
29 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Effect on IV,
2) Series resistance components,
3) Metalsemiconductor resistance,
4) Other series resistance components,
5) Discussion,
6) Effective Channel Length,
7) Summary.
http://nanohub.org/resources/5675

ECE 612 Lecture 14: VT Engineering
28 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) VT Specification,
2) Uniform Doping,
3) Deltafunction doping, xC = 0,
4) Deltafunction doping, xC > 0,
5) Stepwise uniform,
6) Integral solution.
The doping profiles in...
http://nanohub.org/resources/5670

ECE 612 Lecture 12: 2D Electrostatics
28 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Consequences of 2D electrostatics,
2) 2D Poisson equation,
3) Charge sharing model,
4) Barrier lowering,
5) 2D capacitor model,
6) Geometric screening length,
7) Discussion,
8)...
http://nanohub.org/resources/5624

ECE 612 Lecture 11: Effective Mobility
20 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline:
1) Review of mobility,
2) “Effective”mobility,
3) Physics of the effective mobility,
4) Measuring effective mobility,
5) Discussion,
6) Summary.
http://nanohub.org/resources/5619

ECE 612 Lecture 6: MOSFET IV: Velocity saturation
07 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review,
2) Bulk charge theory (approximate),
3) Velocity saturation theory,
4) Summary.
http://nanohub.org/resources/5366

ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge
07 Oct 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Introduction,
2) Square law theory,
3) PN junction effects on MOSFETs,
4) Bulk charge theory (exact),
5) Summary.
http://nanohub.org/resources/5365

Introductory Comments
29 Sep 2008  Online Presentations  Contributor(s): Muhammad A. Alam
http://nanohub.org/resources/5502

Lecture 7: Connection to the Bottom Up Approach
23 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
While the previous lectures have been in the spirit of the bottom up approach, they did not follow the generic device model of Datta. In this lecture, the ballistic MOSFET theory will be formally...
http://nanohub.org/resources/5314

Lecture 6: Quantum Transport in Nanoscale FETs
12 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The previous lessons developed an analytical (or almost analytical) theory of the nanoscale FET, but to properly treat all the details, rigorous computer simulations are necessary. This lecture...
http://nanohub.org/resources/5313

ECE 612 Lecture 4: Polysilicon Gates/QM Effects
12 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review, 2) Workfunctionof poly gates,
3) CV with poly depletion,
4) Quantum mechanics and VT,
5) Quantum mechanics and C,
6) Summary.
http://nanohub.org/resources/5364

ECE 612 Introductory Lecture
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/5340

Lecture 3A: The Ballistic MOSFET
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new...
http://nanohub.org/resources/5309

Lecture 3B: The Ballistic MOSFET
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
http://nanohub.org/resources/5310

Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
10 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our...
http://nanohub.org/resources/5207

ECE 612 Lecture 3: MOS Capacitors
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Short review,
2) Gate voltage / surface potential relation,
3) The flatbandvoltage,
4) MOS capacitance vs. voltage,
5) Gate voltage and inversion layer charge.
http://nanohub.org/resources/5363

ECE 612 Lecture 2: 1D MOS Electrostatics II
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review,
2) ‘Exact’ solution (bulk),
3) Approximate solution (bulk),
4) Approximate solution (ultrathin body),
5) Summary.
http://nanohub.org/resources/5362

ECE 612 Lecture 1: 1D MOS Electrostatics I
09 Sep 2008  Online Presentations  Contributor(s): Mark Lundstrom
Outline: 1) Review of some fundamentals,
2) Identify next steps.
http://nanohub.org/resources/5341