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Introduction: Physics of Nanoscale MOSFETs
0.0 out of 5 stars
26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom
NCN@Purdue Summer School 2008
National Science Fondation
NCN@Purdue Summer School 2008
National Science Fondation
2008 NCN@Purdue Summer School: Electronics from the Bottom Up
26 Aug 2008 | Workshops | Contributor(s): Muhammad A. Alam, Supriyo Datta, Mark Lundstrom
Electronics from the Bottom Up is designed to promote the bottom-up perspective by beginning at the nanoscale, and working up to the micro and macroscale of devices and systems. For electronic...
Physics of Nanoscale MOSFETs
3.5 out of 5 stars
26 Aug 2008 | Courses | Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of...
Lecture 1: Review of MOSFET Fundamentals
4.0 out of 5 stars
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and...
Lecture 1A: What and where is the resistance?
20 Aug 2008 | Online Presentations | Contributor(s): Supriyo Datta
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at...
Lecture 1B: What and where is the resistance?
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
5.0 out of 5 stars
08 Aug 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
Nano Carbon: From ballistic transistors to atomic drumheads
14 May 2008 | Online Presentations | Contributor(s): Paul L. McEuen
Carbon takes many forms, from precious diamonds to lowly graphite. Surprisingly, it is the latter that is the most prized by nano physicists. Graphene, a single layer of graphite, can serve as an...
Examples for QuaMC 2D particle-based device Simulator Tool
12 May 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
We provide three examples that demonstrate the full capabilities of QuaMC 2D for alternative device technologies.
How do I derive the 2D electron density used in nano MOSFET calculations?
Open | Responses: 1
In nanomos-2.5, the density of charge is obtained by multiplying the square of the wavefunction by a prefactor: with semiclassical method, that prefactor is given by
What Promises do Nanotubes and Nanowires Hold for Future Nanoelectronics Applications?
18 Feb 2008 | Online Presentations | Contributor(s): Joerg Appenzeller
Various low-dimensional materials are currently explored for future electronics applications. The common ground
for all these structures is that the surface related impact can no longer be...
Semiconductor Device Education Material
28 Jan 2008 | Teaching Materials | Contributor(s): Gerhard Klimeck
This page has moved to "a Wiki page format"
When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic...
Can numerical “experiments” INSPIRE physical experiments?
20 Dec 2007 | Online Presentations | Contributor(s): Supriyo Datta
This presentation was one of 13 presentations in the one-day forum,
"Excellence in Computer Simulation," which brought together a broad
set of experts to reflect on the future of...
Computational Modeling: Experience from my Bell Lab Days
19 Dec 2007 | Online Presentations | Contributor(s): Muhammad A. Alam
Carrier Transport at the Nanoscale
27 Nov 2007 | Courses | Contributor(s): Mark Lundstrom
Note: A more current teaching of this course with online lectures is available as ECE 656: Electronic Transport in Semiconductors (Fall 2011).
This is a course about how...
Reliability Physics of Nanoscale Transistors
27 Nov 2007 | Courses | Contributor(s): Muhammad A. Alam
This course is now offered on nanoHUB as ECE 695A Reliability Physics of Nanotransistors.
MCW07 Modeling Molecule-Assisted Transport in Nanotransistors
06 Nov 2007 | Online Presentations | Contributor(s): Kamil Walczak
Molecular electronics faces many problems in practical device implementation, due to difficulties with fabrication and gate-ability. In these devices, molecules act as the main conducting channel....
Electronics from the Bottom Up: an educational initiative on 21st century electronics
17 Aug 2007 | Online Presentations | Contributor(s): Mark Lundstrom, Supriyo Datta, Muhammad A. Alam
In the 1960’s, a group of leaders from industry and academia,
recognized that the age of vacuum tubes was ending and that engineers
would have to be educated differently if they were to...
The Nano-MOSFET: A brief introduction
17 Aug 2007 | Online Presentations | Contributor(s): Mark Lundstrom
MOSFET channel lengths are now well below 100nm, and getting smaller,
but MOSFETs are still modeled and understood much as they were 30
years ago. Seminal work in the 1960’s laid the...
A Tutorial for Nanoelectronics Simulation Tools
03 Jul 2007 | Online Presentations | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to some of the available simulators. The simulators discussed are FETToy, nanoMOS, Schred, CNTbands, and QDot Lab. For each simulator, a brief...