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ECE 612 Lecture 30: UTB SOI Electrostatics
out of 5 stars
08 Jan 2007 | | Contributor(s):: Mark Lundstrom
ECE 612 Lecture 26: CMOS Limits
ECE 612 Lecture 22: CMOS Process Steps
04 Jan 2007 | | Contributor(s):: Mark Lundstrom
ECE 612 Lecture 34: Heterostructure FETs
ECE 612 Lecture 33: Heterojunction Bipolar Transistors
11 Dec 2006 | | Contributor(s):: Mark Lundstrom
ECE 612 Lecture 32: Heterojunction Diodes
08 Dec 2006 | | Contributor(s):: Mark Lundstrom
ECE 612 Lecture 31: Heterostructure Fundamentals
ECE 612 Lecture 29: SOI Electrostatics
04 Dec 2006 | | Contributor(s):: Mark Lundstrom
ECE 612 Lecture 28: Overview of SOI Technology
30 Nov 2006 | | Contributor(s):: Mark Lundstrom
Design in the Nanometer Regime: Process Variation
28 Nov 2006 | | Contributor(s):: Kaushik Roy
Scaling of technology over the last few decades has produced an exponential growth in computing power of integrated circuits and an unprecedented number of transistors integrated into a single. However, scaling is facing several problems — severe short channel effects, exponential increase in...
Design of CMOS Circuits in the Nanometer Regime: Leakage Tolerance
The scaling of technology has produced exponential growth in transistor development and computing power in the last few decades, but scaling still presents several challenges. These two lectures will cover device aware CMOS design to address power, reliability, and process variations in scaled...
MOSCNT: code for carbon nanotube transistor simulation
14 Nov 2006 | | Contributor(s):: Siyu Koswatta, Jing Guo, Dmitri Nikonov
Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted...
recursive algorithm for NEGF in Matlab
13 Nov 2006 | | Contributor(s):: Dmitri Nikonov, Siyu Koswatta
This zip-archive contains two Matlab functions for the recursive solution of the partial matrix inversion and partial 3-matrix multiplication used in the non-equilibrium Green’s function (NEGF) method.recuresealg3d.m- works for 3-diagonal matricesrecuresealgblock3d.m- works for 3-block-diagonal...
ECE 612 Lecture 25: CMOS Circuits, Part I I
06 Nov 2006 | | Contributor(s):: Mark Lundstrom
ECE 612 Lecture 23: CMOS Process Flow
ECE 612 Lecture 24: CMOS Circuits, Part I
05 Nov 2006 | | Contributor(s):: Mark Lundstrom
ECE 612 Lecture 21: Gate resistance and Interconnects
02 Nov 2006 | | Contributor(s):: Mark Lundstrom
Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006 | | Contributor(s):: ramesh venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new...
Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006 | | Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ gate...
ECE 612 Lecture 20: MOSFET Leakage
18 Oct 2006 | | Contributor(s):: Mark Lundstrom