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ECE 612 Lecture 25: CMOS Circuits, Part I I
0.0 out of 5 stars
06 Nov 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 23: CMOS Process Flow
ECE 612 Lecture 24: CMOS Circuits, Part I
05 Nov 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 21: Gate resistance and Interconnects
02 Nov 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan-
tum mechanical effects begin to manifest themselves and affect important device
Carbon Nanotube Electronics: Modeling, Physics, and Applications
5.0 out of 5 stars
30 Oct 2006 | Papers | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube
electronic devices and in identifying potential applications has occurred. In a nanotube,
ECE 612 Lecture 20: MOSFET Leakage
18 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006 | Papers | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale
transistors at the quantum level. The principle topics addressed in this report are 1) an
4.5 out of 5 stars
28 Aug 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Semiconductor device technology has transformed our world with supercomputers, personal computers, cell phones, ipods, and
much more that we now take for granted. Moore's Law, posited by...
Modeling of Nanoscale Devices
19 Oct 2006 | Papers | Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introduction
to the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale...
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study
the effect of channel access geometries on device performance. This simulation scheme solves the...
ECE 612 Lecture 19: Series Resistance
17 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 18: VT Engineering
ECE 612 Lecture 17: Device Scaling
The Limits of CMOS Scaling from a Power-Constrained Technology Optimization Perspective
17 Oct 2006 | Online Presentations | Contributor(s): David J. Frank
As CMOS scaling progresses, it is becoming very clear that power dissipation plays a dominant role in limiting how far scaling can go. This talk will briefly describe the various physical effects...
ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances
02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 16: 2D Electrostatics, Part II
ECE 612 Lecture 15: 2D Electrostatics, Part I
ECE 612 Lecture 14: Effective Mobility
Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
28 Sep 2006 | Papers | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim-
ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon-...