
ECE 612 Lecture 28: Overview of SOI Technology
30 Nov 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/2036

Design in the Nanometer Regime: Process Variation
29 Nov 2006  Online Presentations  Contributor(s): Kaushik Roy
Scaling of technology over the last few decades has produced an exponential growth in computing power of integrated circuits and an unprecedented number of transistors integrated into a single....
http://nanohub.org/resources/2018

Design of CMOS Circuits in the Nanometer Regime: Leakage Tolerance
28 Nov 2006  Online Presentations  Contributor(s): Kaushik Roy
The scaling of technology has produced exponential growth in transistor development and computing power in the last few decades, but scaling still presents several challenges. These two lectures...
http://nanohub.org/resources/2023

MOSCNT: code for carbon nanotube transistor simulation
15 Nov 2006  Downloads  Contributor(s): Siyu Koswatta, Jing Guo, Dmitri Nikonov
Ballistic transport in carbon nanotube metaloxidesemiconductor fieldeffect transistors (CNTMOSFETs) is simulated using the Nonequilibrium Green’s function formalism. A cylindrical...
http://nanohub.org/resources/1989

recursive algorithm for NEGF in Matlab
13 Nov 2006  Downloads  Contributor(s): Dmitri Nikonov, Siyu Koswatta
This ziparchive contains two Matlab functions for the recursive solution of the partial matrix inversion and partial 3matrix multiplication used in the nonequilibrium Green’s function (NEGF)...
http://nanohub.org/resources/1983

ECE 612 Lecture 25: CMOS Circuits, Part I I
06 Nov 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1969

ECE 612 Lecture 23: CMOS Process Flow
06 Nov 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1966

ECE 612 Lecture 24: CMOS Circuits, Part I
05 Nov 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1962

ECE 612 Lecture 21: Gate resistance and Interconnects
02 Nov 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1956

Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006  Papers  Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan
tum mechanical effects begin to manifest themselves and affect important device
performance metrics....
http://nanohub.org/resources/1930

Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006  Papers  Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube
electronic devices and in identifying potential applications has occurred. In a nanotube,
low bias...
http://nanohub.org/resources/1928

ECE 612 Lecture 20: MOSFET Leakage
30 Oct 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1899

Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006  Papers  Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale
transistors at the quantum level. The principle topics addressed in this report are 1) an
implementation of...
http://nanohub.org/resources/1917

Nanoelectronics 101
19 Oct 2006  Online Presentations  Contributor(s): Mark Lundstrom
Semiconductor device technology has transformed our world with supercomputers, personal computers, cell phones, ipods, and
much more that we now take for granted. Moore's Law, posited by...
http://nanohub.org/resources/1737

Modeling of Nanoscale Devices
19 Oct 2006  Papers  Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introduction
to the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale...
http://nanohub.org/resources/1902

A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006  Papers  Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a twodimensional quantum mechanical simulation scheme to study
the effect of channel access geometries on device performance. This simulation scheme solves the...
http://nanohub.org/resources/1900

ECE 612 Lecture 19: Series Resistance
17 Oct 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1894

ECE 612 Lecture 18: VT Engineering
17 Oct 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1891

ECE 612 Lecture 17: Device Scaling
17 Oct 2006  Online Presentations  Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1888

The Limits of CMOS Scaling from a PowerConstrained Technology Optimization Perspective
17 Oct 2006  Online Presentations  Contributor(s): David J. Frank
As CMOS scaling progresses, it is becoming very clear that power dissipation plays a dominant role in limiting how far scaling can go. This talk will briefly describe the various physical effects...
http://nanohub.org/resources/1883