Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

All Categories (321-340 of 423)

  1. Design of CMOS Circuits in the Nanometer Regime: Leakage Tolerance

    28 Nov 2006 | Online Presentations | Contributor(s): Kaushik Roy

    The scaling of technology has produced exponential growth in transistor development and computing power in the last few decades, but scaling still presents several challenges. These two lectures...

    http://nanohub.org/resources/2023

  2. MOSCNT: code for carbon nanotube transistor simulation

    15 Nov 2006 | Downloads | Contributor(s): Siyu Koswatta, Jing Guo, Dmitri Nikonov

    Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical...

    http://nanohub.org/resources/1989

  3. recursive algorithm for NEGF in Matlab

    13 Nov 2006 | Downloads | Contributor(s): Dmitri Nikonov, Siyu Koswatta

    This zip-archive contains two Matlab functions for the recursive solution of the partial matrix inversion and partial 3-matrix multiplication used in the non-equilibrium Green’s function (NEGF)...

    http://nanohub.org/resources/1983

  4. ECE 612 Lecture 25: CMOS Circuits, Part I I

    06 Nov 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1969

  5. ECE 612 Lecture 23: CMOS Process Flow

    06 Nov 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1966

  6. ECE 612 Lecture 24: CMOS Circuits, Part I

    05 Nov 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1962

  7. ECE 612 Lecture 21: Gate resistance and Interconnects

    02 Nov 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1956

  8. Modeling Quantum Transport in Nanoscale Transistors

    30 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics....

    http://nanohub.org/resources/1930

  9. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    30 Oct 2006 | Papers | Contributor(s): Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias...

    http://nanohub.org/resources/1928

  10. ECE 612 Lecture 20: MOSFET Leakage

    30 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1899

  11. Nanoscale MOSFETs: Physics, Simulation and Design

    26 Oct 2006 | Papers | Contributor(s): Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...

    http://nanohub.org/resources/1917

  12. Nanoelectronics 101

    19 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    Semiconductor device technology has transformed our world with supercomputers, personal computers, cell phones, ipods, and much more that we now take for granted. Moore's Law, posited by...

    http://nanohub.org/resources/1737

  13. Modeling of Nanoscale Devices

    19 Oct 2006 | Papers | Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov

    We aim to provide engineers with an introduction to the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale...

    http://nanohub.org/resources/1902

  14. A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors

    19 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

    In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the...

    http://nanohub.org/resources/1900

  15. ECE 612 Lecture 19: Series Resistance

    17 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1894

  16. ECE 612 Lecture 18: VT Engineering

    17 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1891

  17. ECE 612 Lecture 17: Device Scaling

    17 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1888

  18. The Limits of CMOS Scaling from a Power-Constrained Technology Optimization Perspective

    17 Oct 2006 | Online Presentations | Contributor(s): David J. Frank

    As CMOS scaling progresses, it is becoming very clear that power dissipation plays a dominant role in limiting how far scaling can go. This talk will briefly describe the various physical effects...

    http://nanohub.org/resources/1883

  19. ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances

    16 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1855

  20. ECE 612 Lecture 16: 2D Electrostatics, Part II

    02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1865