Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

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  1. ECE 612 Lecture 30: UTB SOI Electrostatics

    08 Jan 2007 | | Contributor(s):: Mark Lundstrom

  2. ECE 612 Lecture 26: CMOS Limits

    08 Jan 2007 | | Contributor(s):: Mark Lundstrom

  3. ECE 612 Lecture 22: CMOS Process Steps

    04 Jan 2007 | | Contributor(s):: Mark Lundstrom

  4. ECE 612 Lecture 34: Heterostructure FETs

    04 Jan 2007 | | Contributor(s):: Mark Lundstrom

  5. ECE 612 Lecture 33: Heterojunction Bipolar Transistors

    11 Dec 2006 | | Contributor(s):: Mark Lundstrom

  6. ECE 612 Lecture 32: Heterojunction Diodes

    08 Dec 2006 | | Contributor(s):: Mark Lundstrom

  7. ECE 612 Lecture 31: Heterostructure Fundamentals

    08 Dec 2006 | | Contributor(s):: Mark Lundstrom

  8. ECE 612 Lecture 29: SOI Electrostatics

    04 Dec 2006 | | Contributor(s):: Mark Lundstrom

  9. ECE 612 Lecture 28: Overview of SOI Technology

    30 Nov 2006 | | Contributor(s):: Mark Lundstrom

  10. Design in the Nanometer Regime: Process Variation

    28 Nov 2006 | | Contributor(s):: Kaushik Roy

    Scaling of technology over the last few decades has produced an exponential growth in computing power of integrated circuits and an unprecedented number of transistors integrated into a single. However, scaling is facing several problems — severe short channel effects, exponential increase in...

  11. Design of CMOS Circuits in the Nanometer Regime: Leakage Tolerance

    28 Nov 2006 | | Contributor(s):: Kaushik Roy

    The scaling of technology has produced exponential growth in transistor development and computing power in the last few decades, but scaling still presents several challenges. These two lectures will cover device aware CMOS design to address power, reliability, and process variations in scaled...

  12. MOSCNT: code for carbon nanotube transistor simulation

    14 Nov 2006 | | Contributor(s):: Siyu Koswatta, Jing Guo, Dmitri Nikonov

    Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted...

  13. recursive algorithm for NEGF in Matlab

    13 Nov 2006 | | Contributor(s):: Dmitri Nikonov, Siyu Koswatta

    This zip-archive contains two Matlab functions for the recursive solution of the partial matrix inversion and partial 3-matrix multiplication used in the non-equilibrium Green’s function (NEGF) method.recuresealg3d.m- works for 3-diagonal matricesrecuresealgblock3d.m- works for 3-block-diagonal...

  14. ECE 612 Lecture 25: CMOS Circuits, Part I I

    06 Nov 2006 | | Contributor(s):: Mark Lundstrom

  15. ECE 612 Lecture 23: CMOS Process Flow

    06 Nov 2006 | | Contributor(s):: Mark Lundstrom

  16. ECE 612 Lecture 24: CMOS Circuits, Part I

    05 Nov 2006 | | Contributor(s):: Mark Lundstrom

  17. ECE 612 Lecture 21: Gate resistance and Interconnects

    02 Nov 2006 | | Contributor(s):: Mark Lundstrom

  18. Modeling Quantum Transport in Nanoscale Transistors

    30 Oct 2006 | | Contributor(s):: ramesh venugopal

    As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan- tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new...

  19. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    30 Oct 2006 | | Contributor(s):: Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ gate...

  20. ECE 612 Lecture 20: MOSFET Leakage

    18 Oct 2006 | | Contributor(s):: Mark Lundstrom