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4.5 out of 5 stars
19 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Semiconductor device technology has transformed our world with supercomputers, personal computers, cell phones, ipods, and
much more that we now take for granted. Moore's Law, posited by...
Modeling of Nanoscale Devices
0.0 out of 5 stars
19 Oct 2006 | Papers | Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introduction
to the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale...
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006 | Papers | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study
the effect of channel access geometries on device performance. This simulation scheme solves the...
ECE 612 Lecture 19: Series Resistance
17 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 18: VT Engineering
ECE 612 Lecture 17: Device Scaling
The Limits of CMOS Scaling from a Power-Constrained Technology Optimization Perspective
5.0 out of 5 stars
17 Oct 2006 | Online Presentations | Contributor(s): David J. Frank
As CMOS scaling progresses, it is becoming very clear that power dissipation plays a dominant role in limiting how far scaling can go. This talk will briefly describe the various physical effects...
ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances
16 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 16: 2D Electrostatics, Part II
02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 15: 2D Electrostatics, Part I
ECE 612 Lecture 14: Effective Mobility
Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
28 Sep 2006 | Papers | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim-
ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon-...
Device Physics and Simulation of Silicon Nanowire Transistors
28 Sep 2006 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor
(MOSFET) approaches its scaling limits, many novel device structures are being
extensively explored. Among them,...
ECE 612 Lecture 12: Subthreshold Conduction
25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 10: The Ballistic MOSFET
ECE 612 Lecture 11: The Quasi-ballistic MOSFET
ECE 612 Lecture 8: MOSFET IV, Part II
ECE 612 Lecture 7: MOSFET IV, Part I
12 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 6: Quantum Mechanical Effects
ECE 612 Lecture 9: MOSFET IV, Part III