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ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances
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16 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 16: 2D Electrostatics, Part II
02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 15: 2D Electrostatics, Part I
ECE 612 Lecture 14: Effective Mobility
Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
28 Sep 2006 | Papers | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim-
ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon-...
Device Physics and Simulation of Silicon Nanowire Transistors
28 Sep 2006 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor
(MOSFET) approaches its scaling limits, many novel device structures are being
extensively explored. Among them,...
ECE 612 Lecture 12: Subthreshold Conduction
25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 10: The Ballistic MOSFET
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ECE 612 Lecture 11: The Quasi-ballistic MOSFET
ECE 612 Lecture 8: MOSFET IV, Part II
ECE 612 Lecture 7: MOSFET IV, Part I
12 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 6: Quantum Mechanical Effects
ECE 612 Lecture 9: MOSFET IV, Part III
ECE 612 Lecture 5: Poly Si Gate MOS Capacitors
08 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
ECE 612 Lecture 4: MOS Capacitors
05 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
28 Aug 2006 | Online Presentations | Contributor(s): Greg Snider
Nanoelectronic architectures at this point are necessarily speculative: We are still evaluating many different approaches to fabrication and are exploring unconventional devices made possible at...
Investigation of the Electrical Characteristics of Triple-Gate FinFETs and Silicon-Nanowire FETs
16 Aug 2006 | Online Presentations | Contributor(s): Monica Taba, Gerhard Klimeck
Electrical characteristics of various Fin field-effect transistors (FinFETs) and silicon-nanowires were analyzed and compared using a modified three-dimensional self-consistent quantum-mechanical...
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14 Aug 2006 | Online Presentations | Contributor(s): Margarita Shalaev
DNA is a relatively inexpensive and ubiquitous material that can be used as a scaffold for constructing nanowires. Our research focuses on the manufacturing of DNA-templated, magnetic nanowires....
Surface Analysis of Organic Monlayers Using FTIR and XPS
14 Aug 2006 | Online Presentations | Contributor(s): Jamie Nipple, Michael Toole, David Janes
Current research concerning self-assembled monolayers (SAM) focuses on the fabrication of microelectronics utilizing a semiconductor/molecule/metal junction. This study seeks to investigate...
A MATLAB code for Hartree Fock calculation of H-H ground state bondlength and energy using STO-4G
08 Aug 2006 | Downloads | Contributor(s): Amritanshu Palaria
Hartree Fock (HF) theory is one of the basic theories underlying the current understanding of the electronic structure of materials. It is a simple non-relativistic treatment of many electron...