
Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006   Contributor(s):: ramesh venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan tum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new...

Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006   Contributor(s):: Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of highκ gate...

ECE 612 Lecture 20: MOSFET Leakage
18 Oct 2006   Contributor(s):: Mark Lundstrom

Nanoscale MOSFETs: Physics, Simulation and Design
26 Oct 2006 
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2) development of a new TCAD (technology computer...

Nanoelectronics 101
28 Aug 2006   Contributor(s):: Mark Lundstrom
Semiconductor device technology has transformed our world with supercomputers, personal computers, cell phones, ipods, and much more that we now take for granted. Moore's Law, posited by Intel cofounder Gordon Moore in 1965, states that the number of transistors (the basic building blocks of...

Modeling of Nanoscale Devices
19 Oct 2006   Contributor(s):: M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introductionto the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale electronic devices with quantum mechanicaland atomistic effects. We first review the basis for the...

A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006   Contributor(s):: Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a twodimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the nonequilibrium Green’s function equations selfconsistently with Poisson’s equation and treats the effect of...

ECE 612 Lecture 19: Series Resistance
17 Oct 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 18: VT Engineering
17 Oct 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 17: Device Scaling
17 Oct 2006   Contributor(s):: Mark Lundstrom

The Limits of CMOS Scaling from a PowerConstrained Technology Optimization Perspective
17 Oct 2006 
As CMOS scaling progresses, it is becoming very clear that power dissipation plays a dominant role in limiting how far scaling can go. This talk will briefly describe the various physical effects that arise at the limits of scaling, and will then turn to an analysis of scaling in the presence of...

ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances
02 Oct 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 16: 2D Electrostatics, Part II
02 Oct 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 15: 2D Electrostatics, Part I
02 Oct 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 14: Effective Mobility
02 Oct 2006   Contributor(s):: Mark Lundstrom

Simulating Quantum Transport in Nanoscale Transistors: Real versus ModeSpace Approaches
28 Sep 2006   Contributor(s):: Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, twodimensional quantum mechanical sim ulation scheme for modeling electron transport in thin body, fully depleted, nchannel, silicon oninsulator transistors in the ballistic limit. The proposed simulation scheme, which solves the...

Device Physics and Simulation of Silicon Nanowire Transistors
28 Sep 2006 
As the conventional silicon metaloxidesemiconductor fieldeffect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

ECE 612 Lecture 12: Subthreshold Conduction
25 Sep 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 10: The Ballistic MOSFET
18 Sep 2006   Contributor(s):: Mark Lundstrom

ECE 612 Lecture 11: The Quasiballistic MOSFET
18 Sep 2006   Contributor(s):: Mark Lundstrom