
NanoScale Device Simulations Using PROPHETPart II: PDE Systems
20 Jan 2006  Online Presentations  Contributor(s): Yang Liu, Robert Dutton
Part II uses examples to
illustrate how to build userdefined PDE systems in PROPHET.
http://nanohub.org/resources/975

NanoScale Device Simulations Using PROPHETPart I: Basics
20 Jan 2006  Online Presentations  Contributor(s): Yang Liu, Robert Dutton
Part I covers the basics of PROPHET,
including the setup of simulation structures and parameters based on
predefined PDE systems.
http://nanohub.org/resources/974

NanoScale Device Simulations Using PROPHET
20 Jan 2006  Online Presentations  Contributor(s): Yang Liu, Robert Dutton
These two lectures are aimed to give a practical guide to the use of a
general device simulator
(PROPHET) available on nanoHUB. PROPHET
is a partial differential equation (PDE) solver that...
http://nanohub.org/resources/973

Optimization of Transistor Design for Carbon Nanotubes
20 Jan 2006  Online Presentations  Contributor(s): Jing Guo
We have developed a selfconsistent atomistic simulator for CNTFETs.
Using the simulator, we show that a recently reported highperformance
CNTFET delivers a near ballistic oncurrent. The...
http://nanohub.org/resources/970

Padre
12 Jan 2006  Tools  Contributor(s): Mark R. Pinto, kent smith, Muhammad A. Alam, Steven Clark, Xufeng Wang, Gerhard Klimeck, Dragica Vasileska
2D/3D devices under steady state, transient conditions or AC smallsignal analysis
http://nanohub.org/resources/padre

Quantum Corrections for Monte Carlo Simulation
05 Jan 2006  Online Presentations  Contributor(s): Umberto Ravaioli
Size quantization is an important effect in modern scaled devices. Due to the cost and limitations of available full quantum approaches, it is appealing to extend semiclassical simulators by...
http://nanohub.org/resources/847

Exercises for FETToy
11 Oct 2005  Teaching Materials  Contributor(s): Mark Lundstrom
This series of exercises uses the FETToy program to illustrate some of the key physical concepts for nanotransistors.
http://nanohub.org/resources/622

Ballistic Nanotransistors  Learning Module
07 Dec 2005  Learning Modules  Contributor(s): Mark Lundstrom
This resource is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights...
http://nanohub.org/resources/612

Notes on the Ballistic MOSFET
08 Oct 2005  Papers  Contributor(s): Mark Lundstrom
When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter
frequently from ionized impurities, phonons, surface roughness, etc. so that the average...
http://nanohub.org/resources/489

How Semiconductors and Transistors Work
20 Nov 2005  Animations  Contributor(s): John C. Bean
This animation shows how semiconductor crystals work and how they are used to make transistor switches.
http://nanohub.org/resources/486

Bandstructure in Nanoelectronics
01 Nov 2005  Online Presentations  Contributor(s): Gerhard Klimeck
This presentation will highlight, for nanoelectronic device examples, how the effective mass approximation breaks down and why the quantum mechanical nature of the atomically resolved material...
http://nanohub.org/resources/381

FETToy 2.0 Source Code Download
09 Mar 2005  Downloads
FETToy 2.0 is a set of Matlab scripts that calculate the ballistic IV characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs, FETToy...
http://nanohub.org/resources/107

An Electrical Engineering Perspective on Molecular Electronics
26 Oct 2005  Online Presentations  Contributor(s): Mark Lundstrom
After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths that are less than...
http://nanohub.org/resources/513

Simple Theory of the Ballistic MOSFET
11 Oct 2005  Online Presentations  Contributor(s): Mark Lundstrom
Silicon nanoelectronics has become silicon nanoelectronics, but we
still analyze, design, and think about MOSFETs in more or less in the
same way that we did 30 years ago. In this talk, I...
http://nanohub.org/resources/491

Semiconductor Interfaces at the Nanoscale
17 Oct 2005  Online Presentations  Contributor(s): David Janes
The trend in downscaling of electronic devices and the need to add functionalities such as sensing and nonvolatile memory to existing circuitry dictate that new approaches be developed for device...
http://nanohub.org/resources/196

Plasmonic Nanophotonics: Coupling Light to Nanostructure via Plasmons
03 Oct 2005  Online Presentations  Contributor(s): Vladimir M. Shalaev
The photon is the ultimate unit of information because it packages data in a signal of zero mass and has unmatched speed. The power of light is driving the photonicrevolution, and information...
http://nanohub.org/resources/194

On the Reliability of MicroElectronic Devices: An Introductory Lecture on Negative Bias Temperature Instability
28 Sep 2005  Online Presentations  Contributor(s): Muhammad A. Alam
In 1930s Bell Labs scientists chose to focus on Siand Ge, rather than better known semiconductors like Ag2S and Cu2S, mostly because of their reliable performance. Their choice was rewarded with...
http://nanohub.org/resources/193

Modeling and Simulation of SubMicron Thermal Transport
26 Sep 2005  Online Presentations  Contributor(s): Jayathi Murthy
In recent years, there has been increasing interest in understanding thermal phenomena at the submicron scale. Applications include the thermal performance of microelectronic devices,...
http://nanohub.org/resources/192

Moore's Law Forever?
13 Jul 2005  Online Presentations  Contributor(s): Mark Lundstrom
This talk covers the big technological changes in the 20th and 21st century that were correctly predicted by Gordon Moore in 1965. Moore's Law states that the number of transistors on a silicon...
http://nanohub.org/resources/188

Nanoelectronics: The New Frontier?
18 Apr 2005  Online Presentations  Contributor(s): Mark Lundstrom
After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths of only 50 nm, and...
http://nanohub.org/resources/185