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4.5 out of 5 stars
09 Feb 2006 | Tools | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng
SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.
Nano-Scale Device Simulations Using PROPHET-Lab Exercise 2
5.0 out of 5 stars
08 Feb 2006 | Teaching Materials | Contributor(s): Yang Liu
Companion exercises for "Nano-Scale Device Simulations Using PROPHET".
Nano-Scale Device Simulations Using PROPHET-Lab Exercise 1
A Primer on Semiconductor Device Simulation
23 Jan 2006 | Online Presentations | Contributor(s): Mark Lundstrom
Computer simulation is now an essential tool for the research and development of semiconductor processes and devices, but to use a simulation
tool intelligently, one must know what's "under the...
Nano-Scale Device Simulations Using PROPHET-Part II: PDE Systems
22 Jan 2006 | Online Presentations | Contributor(s): Yang Liu, Robert Dutton
Part II uses examples to
illustrate how to build user-defined PDE systems in PROPHET.
Nano-Scale Device Simulations Using PROPHET-Part I: Basics
Part I covers the basics of PROPHET,
including the set-up of simulation structures and parameters based on
pre-defined PDE systems.
Nano-Scale Device Simulations Using PROPHET
These two lectures are aimed to give a practical guide to the use of a
general device simulator
(PROPHET) available on nanoHUB. PROPHET
is a partial differential equation (PDE) solver that...
Optimization of Transistor Design for Carbon Nanotubes
21 Jan 2006 | Online Presentations | Contributor(s): Jing Guo
We have developed a self-consistent atomistic simulator for CNTFETs.
Using the simulator, we show that a recently reported high-performance
CNTFET delivers a near ballistic on-current. The...
0.0 out of 5 stars
12 Jan 2006 | Tools | Contributor(s): Mark R. Pinto, kent smith, Muhammad A. Alam, Steven Clark, Xufeng Wang, Gerhard Klimeck, Dragica Vasileska
2D/3D devices under steady state, transient conditions or AC small-signal analysis
Quantum Corrections for Monte Carlo Simulation
05 Jan 2006 | Online Presentations | Contributor(s): Umberto Ravaioli
Size quantization is an important effect in modern scaled devices. Due to the cost and limitations of available full quantum approaches, it is appealing to extend semi-classical simulators by...
Exercises for FETToy
4.0 out of 5 stars
07 Dec 2005 | Teaching Materials | Contributor(s): Mark Lundstrom
This series of exercises uses the FETToy program to illustrate some of the key physical concepts for nanotransistors.
Ballistic Nanotransistors - Learning Module
07 Dec 2005 | Series | Contributor(s): Mark Lundstrom
This resource is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new insights...
Notes on the Ballistic MOSFET
21 Nov 2005 | Papers | Contributor(s): Mark Lundstrom
When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter
frequently from ionized impurities, phonons, surface roughness, etc. so that the average...
How Semiconductors and Transistors Work
20 Nov 2005 | Animations | Contributor(s): John C. Bean
This animation shows how semiconductor crystals work and how they are used to make transistor switches.
Bandstructure in Nanoelectronics
01 Nov 2005 | Online Presentations | Contributor(s): Gerhard Klimeck
This presentation will highlight, for nanoelectronic device examples, how the effective mass approximation breaks down and why the quantum mechanical nature of the atomically resolved material...
FETToy 2.0 Source Code Download
3.5 out of 5 stars
27 Oct 2005 | Downloads
FETToy 2.0 is a set of Matlab scripts that calculate the ballistic I-V characteristics for a conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs. For conventional MOSFETs, FETToy...
An Electrical Engineering Perspective on Molecular Electronics
26 Oct 2005 | Online Presentations | Contributor(s): Mark Lundstrom
After forty years of advances in integrated circuit technology, microelectronics is undergoing a transformation to nanoelectronics. Modern day MOSFETs now have channel lengths that are less than...
Simple Theory of the Ballistic MOSFET
19 Oct 2005 | Online Presentations | Contributor(s): Mark Lundstrom
Silicon nanoelectronics has become silicon nanoelectronics, but we
still analyze, design, and think about MOSFETs in more or less in the
same way that we did 30 years ago. In this talk, I...
Semiconductor Interfaces at the Nanoscale
13 Oct 2005 | Online Presentations | Contributor(s): David Janes
The trend in downscaling of electronic devices and the need to add functionalities such as sensing and nonvolatile memory to existing circuitry dictate that new approaches be developed for device...
Plasmonic Nanophotonics: Coupling Light to Nanostructure via Plasmons
04 Oct 2005 | Online Presentations | Contributor(s): Vladimir M. Shalaev
The photon is the ultimate unit of information because it packages data in a signal of zero mass and has unmatched speed. The power of light is driving the photonicrevolution, and information...