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ECE 695A Lecture 13: Introductory Lecture on HCI Degradation
19 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Background and features of HCI DegradationPhenomenological observationsOrigin of Hot carriersTheory of Si-H Bond DissociationTheory of Si-O Bond DissociationConclusions
ECE 695A Lecture 13R: Review Questions
Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the...
ECE 695A Lecture 5R: Review Questions
12 Feb 2013 | | Contributor(s):: Muhammad Alam
Review Questions:What is the difference between coordination and composition?Is periodicity essential for a defect-free structure?Why can’t the amorphous material have arbitrary ring distribution?How does Temperature enter in Maxwell’s relationship?Do you expect more or less defect for...
ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation
08 Feb 2013 | | Contributor(s):: Muhammad Alam
ECE 695A Lecture 11R: Review Questions
Review Questions:Does Einstein relationship hold for activated diffusion?People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you support the argument?What assumption did I make regarding diffusion of H in SiO2 that makes the derivation...
ECE 695A Lecture 12: Field Dependence of NBTI
Outline:Background: Field dependent degradationComponents of field-dependent dissociation:Interpreting experimentsVoltage acceleration factorsConclusion
ECE 695A Lecture 12R: Review Questions
Review Questions:Explain the difference between local field and global field within an oxide. Explain physically why electric field decreases bond strength.How does the dissociation process becomes non-Arrhenius?Do you think the diffusion and repassivation will also become non-Arrhenius when...
ECE 695A Lecture 9R: Review Questions
Review Questions:Does NBTI power-exponent depend on voltage or temperature?Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?How does one know that the diffusing species is neutral?How would the time-exponent different for a surround gate MOSFET vs. planar...
ECE 695A Lecture 11: Temperature Dependence of NBTI
07 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Review: Temperature activation & NBTITemperature dependent forward/reverse ratesTemperature dependence of diffusion coefficientMaterial dependence of activation energyConclusion
ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies
06 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:NBTI stress and relaxation by R-D modelFrequency independence and lifetime projectionDuty cycle dependenceThe magic of measurementConclusions
ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase
Outline:Background: Time-dependent degradationThe Reaction-Diffusion modelApproximate solution to R-D model in stress phaseDegradation free transistorsConclusions
ECE 695A Lecture 6: Defects in the Bulk and at Interfaces
01 Feb 2013 | | Contributor(s):: Muhammad Alam
Outline:Strain in materials/origin of defectsExamples: bulk defectsExamples: interface defectsMeasurementsConclusions
ECE 695A Lecture 8: Phenomenological Observations for NBTI
Outline:Qualitative observationsTime, voltage, temperature dependenciesMaterial dependenceCircuit implications
ECE 695A Lecture 8R: Review Questions
What is the distinction between BTI and NBTI phenomena?What does it mean that a process is thermally activated?What is the difference between parametric failure and catastrophic failure? Give examples. What are the time-characteristics of trapping, BTI, and NBTI?Which device will have poorer...
ECE 695A Lecture 7: Trapping in Pre-existing Traps
29 Jan 2013 | | Contributor(s):: Muhammad Alam
Outline:Pre-existing vs. stress-induced trapsVoltage-shift in pre-existing bulk/interface trapsRandom Telegraph Noise, 1/f noiseConclusion
ECE 695A Lecture 7A: Appendix - Theory of Stochastic Distribution
Supplemental information for Lecture 7: Trapping in Pre-existing Traps
ECE 695A Lecture 7R: Review Questions
Review Questions:Why are there more types of defects in crystals than in amorphous material?From the perspective of Maxwell’s relation, how does H reduce defect density?Why is HfO2 so defective --- and why do you want to use it?Which type of traps involve faster trapping/detrapping, Pb center or...
ECE 695A Reliability Physics of Nanotransistors
17 Jan 2013 | | Contributor(s):: Muhammad Alam
This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a voltage is applied.
ECE 695A Lecture 1: Reliability of Nanoelectronic Devices
11 Jan 2013 | | Contributor(s):: Muhammad Alam
Outline:Evolving Landscape of ElectronicsPerformance, Variability, and ReliabilityClassification of ReliabilityCourse InformationConclusions
ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012 | | Contributor(s):: Gerhard Klimeck