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ECE 695A Lecture 12R: Review Questions
08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Explain the difference between local field and global field within an oxide.
Explain physically why electric field decreases bond strength.
How does the dissociation...
ECE 695A Lecture 9R: Review Questions
Does NBTI power-exponent depend on voltage or temperature?
Do you expect the NBTI power-exponent to be larger or smaller if trapping is important?
How does one know that...
ECE 695A Lecture 11: Temperature Dependence of NBTI
07 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Review: Temperature activation & NBTI
Temperature dependent forward/reverse rates
Temperature dependence of diffusion coefficient
Material dependence of activation...
ECE 695A Lecture 10: NBTI Time Dependence -- Frequency and Duty Cycle Dependencies
06 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
NBTI stress and relaxation by R-D model
Frequency independence and lifetime projection
Duty cycle dependence
The magic of measurement
ECE 695A Lecture 9: NBTI Time Dependence -- Stress Phase
Background: Time-dependent degradation
The Reaction-Diffusion model
Approximate solution to R-D model in stress phase
Degradation free transistors
ECE 695A Lecture 6: Defects in the Bulk and at Interfaces
01 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Strain in materials/origin of defects
Examples: bulk defects
Examples: interface defects
ECE 695A Lecture 8: Phenomenological Observations for NBTI
Time, voltage, temperature dependencies
ECE 695A Lecture 8R: Review Questions
What is the distinction between BTI and NBTI phenomena?
What does it mean that a process is thermally activated?
What is the difference between parametric failure and catastrophic failure?...
ECE 695A Lecture 7: Trapping in Pre-existing Traps
29 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Pre-existing vs. stress-induced traps
Voltage-shift in pre-existing bulk/interface traps
Random Telegraph Noise, 1/f noise
ECE 695A Lecture 7A: Appendix - Theory of Stochastic Distribution
Supplemental information for Lecture 7: Trapping in Pre-existing Traps
ECE 695A Lecture 7R: Review Questions
Why are there more types of defects in crystals than in amorphous material?
From the perspective of Maxwell’s relation, how does H reduce defect density?
Why is HfO2 so...
ECE 695A Reliability Physics of Nanotransistors
17 Jan 2013 | Courses | Contributor(s): Muhammad Alam
This course will focus on the physics of reliability of small semiconductor devices. In traditional courses on device physics, the students learn how to compute current through a device when a...
ECE 695A Lecture 1: Reliability of Nanoelectronic Devices
11 Jan 2013 | Online Presentations | Contributor(s): Muhammad Alam
Evolving Landscape of Electronics
Performance, Variability, and Reliability
Classification of Reliability
ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck
ABACUS—Introduction to Semiconductor Devices
When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...
Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
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24 Oct 2012 | Teaching Materials | Contributor(s): Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals
of Modern VLSI Devices by Yuan Taur and Tak H. Ning . (Another good reference is
nanoHUB-U NT Nanoscale Transistors: Scientific Overview
03 Aug 2012 | Online Presentations | Contributor(s): Mark Lundstrom
For details see http://nanohub.org/u
Nanoscale Transistors has been refined and condensed into a five-week online course that develops a unified framework for understanding essentials of...
19 Jul 2012 | Courses | Contributor(s): Mark Lundstrom
These lectures discuss the physics of nanoscale transistors. The focus is on developing a sound, physical understanding of the...
Nanoscale Transistors Lecture 10: Scattering Model
19 Jul 2012 | Online Presentations | Contributor(s): Mark Lundstrom