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Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | Papers | Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...
Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013 | Papers | Contributor(s): Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators...
Modeling Quantum Transport in Nanoscale Transistors
28 Jun 2013 | Papers | Contributor(s): Ramesh Venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore,...
Nanoscale MOSFETS: Physics, Simulation and Design
28 Jun 2013 | Papers | Contributor(s): Zhibin Ren
This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...
Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors
28 Jun 2013 | Papers | Contributor(s): Jung-Hoon Rhew
The formidable progress in microelectronics in the last decade has pushed the
channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...
Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S
28 Jun 2013 | Papers | Contributor(s): Carl R. Huster
For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive...
ECE 695A Lecture 18: DC-IV and Charge Pumping Methods
25 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Recall: Properties of Interface Defects
Flux-based method 1: Direct Current-Voltage method
Flux-based method 2: Charge pumping method
ECE 695A Lecture 16: Review Questions
22 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
What is the difference between hot atom dissociation vs. cold atom dissociation?.
Many experiments are reported at 77K and 295K. Why these temperatures?.
Why is there such...
ECE 695A Lecture 17: Subthreshold and Idlin Methods
21 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
ECE 695A Lecture 15R: Review Questions
20 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Why is BTBT tunneling important for OFF-state HCI, but nor for ON-state HCI?
What type of bond dissociation dominated DeMOS degradation? Provide two supporting arguments....
ECE 695A Lecture 14a: Voltage Dependent HCI I
19 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
Background and Empirical Observations
Theory of Hot Carriers: Hydrodynamic Model
Theory of Hot Carriers: Monte Carlo Model
Theory of Hot Carriers: Universal...
ECE 695A Lecture 14b: Voltage Dependent HCI II
ECE 695A Lecture 14R: Review Questions
Why is Isub called a thermometer of hot electron distribution? Why can you not simply measure hot electrons by looking at the drain current?
What are the three methods of...
ECE 695A Lecture 15: Off-state HCI Degradation
ON vs. OFF State HCI Degradation
Origin of hot carriers at off-state
SiH vs. SiO – who is getting broken? Voltage acceleration factors by scaling
ECE 695A Lecture 16: Temperature Dependence of HCI
Empirical observations regarding HCI
Theory of bond dissociation: MVE vs. RRK
Hot carrier dissociation of SiH bonds
Hot carrier dissociation of SiO bonds
ECE 695A Lecture 13: Introductory Lecture on HCI Degradation
Background and features of HCI Degradation
Origin of Hot carriers
Theory of Si-H Bond Dissociation
Theory of Si-O Bond...
ECE 695A Lecture 13R: Review Questions
Both SiH and SiO are involved in HCI degradation. Give two evidences.
Why doesn’t HCI occur during NBTI stress condition?
I suggested that HCI curve can shifted...
ECE 695A Lecture 5R: Review Questions
12 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
What is the difference between coordination and composition?
Is periodicity essential for a defect-free structure?
Why can’t the amorphous material have arbitrary ring...
ECE 695A Lecture 10A: Appendix - Reflection on R-D Equation
08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam
ECE 695A Lecture 11R: Review Questions
Does Einstein relationship hold for activated diffusion?
People argue that the forward dissociation and reverse passivation have similar activation barriers. Would you...