Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

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  1. ECE 612 Lecture 28: Overview of SOI Technology

    30 Nov 2006 | | Contributor(s):: Mark Lundstrom

  2. ECE 612 Lecture 29: SOI Electrostatics

    04 Dec 2006 | | Contributor(s):: Mark Lundstrom

  3. ECE 612 Lecture 2: 1D MOS Electrostatics II

    09 Sep 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Review,2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.

  4. ECE 612 Lecture 2: Introduction to Device Simulation

    08 Aug 2006 | | Contributor(s):: Mark Lundstrom

  5. ECE 612 Lecture 30: UTB SOI Electrostatics

    08 Jan 2007 | | Contributor(s):: Mark Lundstrom

  6. ECE 612 Lecture 31: Heterostructure Fundamentals

    08 Dec 2006 | | Contributor(s):: Mark Lundstrom

  7. ECE 612 Lecture 32: Heterojunction Diodes

    08 Dec 2006 | | Contributor(s):: Mark Lundstrom

  8. ECE 612 Lecture 33: Heterojunction Bipolar Transistors

    11 Dec 2006 | | Contributor(s):: Mark Lundstrom

  9. ECE 612 Lecture 34: Heterostructure FETs

    04 Jan 2007 | | Contributor(s):: Mark Lundstrom

  10. ECE 612 Lecture 3: 1D MOS Electrostatics

    08 Aug 2006 | | Contributor(s):: Mark Lundstrom

  11. ECE 612 Lecture 3: MOS Capacitors

    09 Sep 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

  12. ECE 612 Lecture 4: MOS Capacitors

    05 Sep 2006 | | Contributor(s):: Mark Lundstrom

  13. ECE 612 Lecture 4: Polysilicon Gates/QM Effects

    12 Sep 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Review, 2) Workfunctionof poly gates,3) CV with poly depletion,4) Quantum mechanics and VT,5) Quantum mechanics and C,6) Summary.

  14. ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge

    07 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Introduction,2) Square law theory,3) PN junction effects on MOSFETs,4) Bulk charge theory (exact),5) Summary.

  15. ECE 612 Lecture 5: Poly Si Gate MOS Capacitors

    05 Sep 2006 | | Contributor(s):: Mark Lundstrom

  16. ECE 612 Lecture 6: MOSFET IV: Velocity saturation

    07 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) Review,2) Bulk charge theory (approximate),3) Velocity saturation theory,4) Summary.

  17. ECE 612 Lecture 6: Quantum Mechanical Effects

    05 Sep 2006 | | Contributor(s):: Mark Lundstrom

  18. ECE 612 Lecture 7: MOSFET IV, Part I

    11 Sep 2006 | | Contributor(s):: Mark Lundstrom

  19. ECE 612 Lecture 8: MOSFET IV, Part II

    11 Sep 2006 | | Contributor(s):: Mark Lundstrom

  20. ECE 612 Lecture 9: MOSFET IV, Part III

    12 Sep 2006 | | Contributor(s):: Mark Lundstrom