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ECE 612 Lecture 10: The Ballistic MOSFET
18 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1794
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ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances
25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom
Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006...
http://nanohub.org/resources/5618
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ECE 612 Lecture 11: Effective Mobility
20 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:1) Review of mobility,2) “Effective”mobility,3) Physics of the effective mobility,4) Measuring effective mobility,5) Discussion,6) Summary.
http://nanohub.org/resources/5619
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ECE 612 Lecture 11: The Quasi-ballistic MOSFET
18 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1797
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ECE 612 Lecture 12: 2D Electrostatics
28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:1) Consequences of 2D electrostatics,2) 2D Poisson equation,3) Charge sharing model,4) Barrier lowering,5) 2D capacitor model,6) Geometric screening length,7) Discussion,8) Summary.
http://nanohub.org/resources/5624
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ECE 612 Lecture 12: Subthreshold Conduction
25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1823
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ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances
02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1855
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ECE 612 Lecture 14: Effective Mobility
02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1858
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ECE 612 Lecture 14: VT Engineering
28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) VT Specification,2) Uniform Doping,3) Delta-function doping, xC = 0,4) Delta-function doping, xC > 0,5) Stepwise uniform,6) Integral solution.
http://nanohub.org/resources/5670
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ECE 612 Lecture 15: 2D Electrostatics, Part I
02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1861
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ECE 612 Lecture 15: Series Resistance (and effective channel length)
29 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:1) Effect on I-V,2) Series resistance components,3) Metal-semiconductor resistance,4) Other series resistance components,5) Discussion,6) Effective Channel Length,7) Summary.
http://nanohub.org/resources/5675
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ECE 612 Lecture 16: 2D Electrostatics, Part II
02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1865
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ECE 612 Lecture 16: MOSFET Leakage
31 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:1) MOSFET leakage components,2) Band to band tunneling,3) Gate-induced drain leakage,4) Gate leakage,5) Scaling and ITRS,6) Summary.
http://nanohub.org/resources/5688
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ECE 612 Lecture 17: Device Scaling
17 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1888
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ECE 612 Lecture 17: Gate Resistance and Interconnects
03 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:1) Gate Resistance,2) Interconnects,3) ITRS,4) Summary.
http://nanohub.org/resources/5700
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ECE 612 Lecture 18: VT Engineering
17 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1891
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ECE 612 Lecture 19: Device Variability
14 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline:1) Sources of variability,2) Random dopantfluctuations (RDF),3) Line edge roughness (LER),4) Impact on design.
http://nanohub.org/resources/5856
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ECE 612 Lecture 19: Series Resistance
17 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1894
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ECE 612 Lecture 1: 1D MOS Electrostatics I
09 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Review of some fundamentals,2) Identify next steps.
http://nanohub.org/resources/5341
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ECE 612 Lecture 1: MOSFET Review
08 Aug 2006 | Online Presentations | Contributor(s): Mark Lundstrom
http://nanohub.org/resources/1696