Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

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  1. ECE 495N Teaching Materials: Homeworks and Exams (Fall 2008)

    07 Jul 2009 | | Contributor(s):: Supriyo Datta

    Teaching materials for ECE 495N "Fundamentals of Nanoelectronics".

  2. ECE 606 Lecture 14: Bulk Recombination

    29 Mar 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Derivation of SRH formulaApplication of SRH formula for special casesDirect and Auger recombinationConclusion

  3. ECE 606 Lecture 15: Surface Recombination/Generation

    29 Mar 2009 | | Contributor(s):: Muhammad A. Alam

    Outline:Nature of interface statesSRH formula adapted to interface statesSurface recombination in depletion regionConclusion

  4. ECE 606 Lecture 25: Modern MOSFETs

    03 Dec 2012 | | Contributor(s):: Gerhard Klimeck

  5. ECE 606 Lecture 38: Modern MOSFET

    07 May 2009 | | Contributor(s):: Muhammad A. Alam

  6. ECE 612 Introductory Lecture

    10 Sep 2008 | | Contributor(s):: Mark Lundstrom

  7. ECE 612 Introductory Lecture (Fall 06)

    08 Aug 2006 | | Contributor(s):: Mark Lundstrom

  8. ECE 612 Lecture 10: The Ballistic MOSFET

    18 Sep 2006 | | Contributor(s):: Mark Lundstrom

  9. ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances

    25 Jan 2014 | | Contributor(s):: Mark Lundstrom

    Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.

  10. ECE 612 Lecture 11: Effective Mobility

    20 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Review of mobility,2) “Effective”mobility,3) Physics of the effective mobility,4) Measuring effective mobility,5) Discussion,6) Summary.

  11. ECE 612 Lecture 11: The Quasi-ballistic MOSFET

    18 Sep 2006 | | Contributor(s):: Mark Lundstrom

  12. ECE 612 Lecture 12: 2D Electrostatics

    28 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Consequences of 2D electrostatics,2) 2D Poisson equation,3) Charge sharing model,4) Barrier lowering,5) 2D capacitor model,6) Geometric screening length,7) Discussion,8) Summary.

  13. ECE 612 Lecture 12: Subthreshold Conduction

    25 Sep 2006 | | Contributor(s):: Mark Lundstrom

  14. ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances

    02 Oct 2006 | | Contributor(s):: Mark Lundstrom

  15. ECE 612 Lecture 14: Effective Mobility

    02 Oct 2006 | | Contributor(s):: Mark Lundstrom

  16. ECE 612 Lecture 14: VT Engineering

    28 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline: 1) VT Specification,2) Uniform Doping,3) Delta-function doping, xC = 0,4) Delta-function doping, xC > 0,5) Stepwise uniform,6) Integral solution.The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of how non-uniform doping profiles affect...

  17. ECE 612 Lecture 15: 2D Electrostatics, Part I

    02 Oct 2006 | | Contributor(s):: Mark Lundstrom

  18. ECE 612 Lecture 15: Series Resistance (and effective channel length)

    29 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) Effect on I-V,2) Series resistance components,3) Metal-semiconductor resistance,4) Other series resistance components,5) Discussion,6) Effective Channel Length,7) Summary.

  19. ECE 612 Lecture 16: 2D Electrostatics, Part II

    02 Oct 2006 | | Contributor(s):: Mark Lundstrom

  20. ECE 612 Lecture 16: MOSFET Leakage

    31 Oct 2008 | | Contributor(s):: Mark Lundstrom

    Outline:1) MOSFET leakage components,2) Band to band tunneling,3) Gate-induced drain leakage,4) Gate leakage,5) Scaling and ITRS,6) Summary.