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ECE 495N F08 Homework 9 (Lectures 36-41)
08 Jul 2009 | | Contributor(s):: Supriyo Datta
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ECE 495N Teaching Materials: Homeworks and Exams (Fall 2008)
07 Jul 2009 | | Contributor(s):: Supriyo Datta
Teaching materials for ECE 495N "Fundamentals of Nanoelectronics".
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ECE 606 Lecture 14: Bulk Recombination
29 Mar 2009 | | Contributor(s):: Muhammad A. Alam
Outline:Derivation of SRH formulaApplication of SRH formula for special casesDirect and Auger recombinationConclusion
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ECE 606 Lecture 15: Surface Recombination/Generation
29 Mar 2009 | | Contributor(s):: Muhammad A. Alam
Outline:Nature of interface statesSRH formula adapted to interface statesSurface recombination in depletion regionConclusion
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ECE 606 Lecture 25: Modern MOSFETs
03 Dec 2012 | | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 38: Modern MOSFET
07 May 2009 | | Contributor(s):: Muhammad A. Alam
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ECE 612 Introductory Lecture
10 Sep 2008 | | Contributor(s):: Mark Lundstrom
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ECE 612 Introductory Lecture (Fall 06)
08 Aug 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 10: The Ballistic MOSFET
18 Sep 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances
25 Jan 2014 | | Contributor(s):: Mark Lundstrom
Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.
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ECE 612 Lecture 11: Effective Mobility
20 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Review of mobility,2) “Effective”mobility,3) Physics of the effective mobility,4) Measuring effective mobility,5) Discussion,6) Summary.
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ECE 612 Lecture 11: The Quasi-ballistic MOSFET
18 Sep 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 12: 2D Electrostatics
28 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Consequences of 2D electrostatics,2) 2D Poisson equation,3) Charge sharing model,4) Barrier lowering,5) 2D capacitor model,6) Geometric screening length,7) Discussion,8) Summary.
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ECE 612 Lecture 12: Subthreshold Conduction
25 Sep 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances
02 Oct 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 14: Effective Mobility
02 Oct 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 14: VT Engineering
28 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline: 1) VT Specification,2) Uniform Doping,3) Delta-function doping, xC = 0,4) Delta-function doping, xC > 0,5) Stepwise uniform,6) Integral solution.The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of how non-uniform doping profiles affect...
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ECE 612 Lecture 15: 2D Electrostatics, Part I
02 Oct 2006 | | Contributor(s):: Mark Lundstrom
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ECE 612 Lecture 15: Series Resistance (and effective channel length)
29 Oct 2008 | | Contributor(s):: Mark Lundstrom
Outline:1) Effect on I-V,2) Series resistance components,3) Metal-semiconductor resistance,4) Other series resistance components,5) Discussion,6) Effective Channel Length,7) Summary.
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ECE 612 Lecture 16: 2D Electrostatics, Part II
02 Oct 2006 | | Contributor(s):: Mark Lundstrom