Tags: nanotransistors

Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

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  1. ECE 606 Lecture 14: Bulk Recombination

    29 Mar 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    Outline: Derivation of SRH formula Application of SRH formula for special cases Direct and Auger recombination Conclusion R. F. Pierret, "Advanced Semiconductor Fundamentals", Modular...

    http://nanohub.org/resources/5808

  2. ECE 606 Lecture 15: Surface Recombination/Generation

    29 Mar 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    Outline: Nature of interface states SRH formula adapted to interface states Surface recombination in depletion region Conclusion R. F. Pierret, "Advanced Semiconductor Fundamentals",...

    http://nanohub.org/resources/5811

  3. ECE 606 Lecture 25: Modern MOSFETs

    03 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/16055

  4. ECE 606 Lecture 38: Modern MOSFET

    07 May 2009 | Online Presentations | Contributor(s): Muhammad A. Alam

    http://nanohub.org/resources/5906

  5. ECE 612 Introductory Lecture

    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/5340

  6. ECE 612 Introductory Lecture (Fall 06)

    08 Aug 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1693

  7. ECE 612 Lecture 10: The Ballistic MOSFET

    25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1794

  8. ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances

    25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom

    Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.

    http://nanohub.org/resources/5618

  9. ECE 612 Lecture 11: Effective Mobility

    20 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review of mobility, 2) “Effective”mobility, 3) Physics of the effective mobility, 4) Measuring effective mobility, 5) Discussion, 6) Summary.

    http://nanohub.org/resources/5619

  10. ECE 612 Lecture 11: The Quasi-ballistic MOSFET

    25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1797

  11. ECE 612 Lecture 12: 2D Electrostatics

    28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Consequences of 2D electrostatics, 2) 2D Poisson equation, 3) Charge sharing model, 4) Barrier lowering, 5) 2D capacitor model, 6) Geometric screening length, 7) Discussion, 8)...

    http://nanohub.org/resources/5624

  12. ECE 612 Lecture 12: Subthreshold Conduction

    25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1823

  13. ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances

    16 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1855

  14. ECE 612 Lecture 14: Effective Mobility

    02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1858

  15. ECE 612 Lecture 14: VT Engineering

    28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) VT Specification, 2) Uniform Doping, 3) Delta-function doping, xC = 0, 4) Delta-function doping, xC > 0, 5) Stepwise uniform, 6) Integral solution. The doping profiles in...

    http://nanohub.org/resources/5670

  16. ECE 612 Lecture 15: 2D Electrostatics, Part I

    02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1861

  17. ECE 612 Lecture 15: Series Resistance (and effective channel length)

    29 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Effect on I-V, 2) Series resistance components, 3) Metal-semiconductor resistance, 4) Other series resistance components, 5) Discussion, 6) Effective Channel Length, 7) Summary.

    http://nanohub.org/resources/5675

  18. ECE 612 Lecture 16: 2D Electrostatics, Part II

    02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1865

  19. ECE 612 Lecture 16: MOSFET Leakage

    31 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) MOSFET leakage components, 2) Band to band tunneling, 3) Gate-induced drain leakage, 4) Gate leakage, 5) Scaling and ITRS, 6) Summary.

    http://nanohub.org/resources/5688

  20. ECE 612 Lecture 17: Device Scaling

    17 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1888