Tags: nanotransistors

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Description

A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

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  1. ECE 612 Introductory Lecture

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    10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/5340

  2. ECE 612 Introductory Lecture (Fall 06)

    4.0 out of 5 stars 

    08 Aug 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1693

  3. ECE 612 Lecture 10: The Ballistic MOSFET

    5.0 out of 5 stars 

    25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1794

  4. ECE 612 Lecture 10: Threshold Voltage and MOSFET Capacitances

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    25 Jan 2014 | Online Presentations | Contributor(s): Mark Lundstrom

    Please view ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances from the 2006 teaching.

    http://nanohub.org/resources/5618

  5. ECE 612 Lecture 11: Effective Mobility

    5.0 out of 5 stars 

    20 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Review of mobility, 2) “Effective”mobility, 3) Physics of the effective mobility, 4) Measuring effective mobility, 5) Discussion, 6) Summary.

    http://nanohub.org/resources/5619

  6. ECE 612 Lecture 11: The Quasi-ballistic MOSFET

    0.0 out of 5 stars 

    25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1797

  7. ECE 612 Lecture 12: 2D Electrostatics

    0.0 out of 5 stars 

    28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Consequences of 2D electrostatics, 2) 2D Poisson equation, 3) Charge sharing model, 4) Barrier lowering, 5) 2D capacitor model, 6) Geometric screening length, 7) Discussion, 8)...

    http://nanohub.org/resources/5624

  8. ECE 612 Lecture 12: Subthreshold Conduction

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    25 Sep 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1823

  9. ECE 612 Lecture 13: Threshold Voltage and MOSFET Capacitances

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    16 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1855

  10. ECE 612 Lecture 14: Effective Mobility

    0.0 out of 5 stars 

    02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1858

  11. ECE 612 Lecture 14: VT Engineering

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    28 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) VT Specification, 2) Uniform Doping, 3) Delta-function doping, xC = 0, 4) Delta-function doping, xC > 0, 5) Stepwise uniform, 6) Integral solution. The doping profiles in...

    http://nanohub.org/resources/5670

  12. ECE 612 Lecture 15: 2D Electrostatics, Part I

    0.0 out of 5 stars 

    02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1861

  13. ECE 612 Lecture 15: Series Resistance (and effective channel length)

    5.0 out of 5 stars 

    29 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Effect on I-V, 2) Series resistance components, 3) Metal-semiconductor resistance, 4) Other series resistance components, 5) Discussion, 6) Effective Channel Length, 7) Summary.

    http://nanohub.org/resources/5675

  14. ECE 612 Lecture 16: 2D Electrostatics, Part II

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    02 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1865

  15. ECE 612 Lecture 16: MOSFET Leakage

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    31 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) MOSFET leakage components, 2) Band to band tunneling, 3) Gate-induced drain leakage, 4) Gate leakage, 5) Scaling and ITRS, 6) Summary.

    http://nanohub.org/resources/5688

  16. ECE 612 Lecture 17: Device Scaling

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    17 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1888

  17. ECE 612 Lecture 17: Gate Resistance and Interconnects

    0.0 out of 5 stars 

    03 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Gate Resistance, 2) Interconnects, 3) ITRS, 4) Summary.

    http://nanohub.org/resources/5700

  18. ECE 612 Lecture 18: VT Engineering

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    17 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1891

  19. ECE 612 Lecture 19: Device Variability

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    14 Nov 2008 | Online Presentations | Contributor(s): Mark Lundstrom

    Outline: 1) Sources of variability, 2) Random dopantfluctuations (RDF), 3) Line edge roughness (LER), 4) Impact on design.

    http://nanohub.org/resources/5856

  20. ECE 612 Lecture 19: Series Resistance

    0.0 out of 5 stars 

    17 Oct 2006 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/1894