Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
BNC Annual Research Symposium: Nanoelectronics and Semiconductor Devices
0.0 out of 5 stars
23 Apr 2007 | Online Presentations | Contributor(s): David Janes
This presentation is part of a collection of presentations describing the projects, people, and capabilities enhanced by research performed in the Birck Center, and a look at plans for the...
Can numerical “experiments” INSPIRE physical experiments?
5.0 out of 5 stars
20 Dec 2007 | Online Presentations | Contributor(s): Supriyo Datta
This presentation was one of 13 presentations in the one-day forum,
"Excellence in Computer Simulation," which brought together a broad
set of experts to reflect on the future of...
Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006 | Papers | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube
electronic devices and in identifying potential applications has occurred. In a nanotube,
Carrier Transport at the Nanoscale
27 Nov 2007 | Courses | Contributor(s): Mark Lundstrom
Note: A more current teaching of this course with online lectures is available as ECE 656: Electronic Transport in Semiconductors (Fall 2011).
This is a course about how...
Chemically Enhanced Carbon-Based Nanomaterials and Devices
09 Nov 2010 | Online Presentations | Contributor(s): Mark Hersam
Carbon-based nanomaterials have attracted significant attention due to their potential to enable and/or improve applications such as transistors, transparent conductors, solar cells, batteries,...
4.5 out of 5 stars
25 May 2005 | Online Presentations | Contributor(s): Mark Lundstrom
In non-specialist language, this talk introduces CMOS technology used for modern electronics. Beginning with an explanation of "CMOS," the speaker relates basic system considerations of transistor...
Computational and Experimental Study of Transport in Advanced Silicon Devices
28 Jun 2013 | Papers | Contributor(s): Farzin Assad
In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...
Computational Modeling: Experience from my Bell Lab Days
19 Dec 2007 | Online Presentations | Contributor(s): Muhammad A. Alam
Control of Spin Precession in a Datta-Das Transistor Structure
11 Apr 2011 | Online Presentations | Contributor(s): Hyun Cheol Koo
Transistors Switch onto Spin
Using the spin of an electron in addition to, or instead of, the charge properties is believed to have many benefits in terms of speed, power-cost, and integration...
Curriculum on Nanotechnology
27 Jan 2005 | Courses
To exploit the opportunities that nanoscience is giving us, engineers will need to learn how to think about materials, devices, circuits, and systems in new ways. The NCN seeks to bring the new...
Design in the Nanometer Regime: Process Variation
29 Nov 2006 | Online Presentations | Contributor(s): Kaushik Roy
Scaling of technology over the last few decades has produced an exponential growth in computing power of integrated circuits and an unprecedented number of transistors integrated into a single....
Design of CMOS Circuits in the Nanometer Regime: Leakage Tolerance
28 Nov 2006 | Online Presentations | Contributor(s): Kaushik Roy
The scaling of technology has produced exponential growth in transistor development and computing power in the last few decades, but scaling still presents several challenges. These two lectures...
Device Physics and Simulation of Silicon Nanowire Transistors
20 May 2006 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the...
28 Sep 2006 | Papers | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor
(MOSFET) approaches its scaling limits, many novel device structures are being
extensively explored. Among them,...
Digital Electronics: Fundamental Limits and Future Prospects
13 Apr 2004 | Online Presentations | Contributor(s): Konstantin K. Likharev
I will review some old and some recent work on the fundamental (and not so fundamental) limits imposed by physics of electron devices on their density and power consumption.
Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices
28 Jun 2013 | Papers | Contributor(s): Kausar Banoo
Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators...
Discussion Session 2 (Lectures 3 and 4)
08 Sep 2010 | Online Presentations | Contributor(s): Supriyo Datta
“Electronics from the Bottom Up” is an educational initiative designed to bring a new perspective to the field of nano device engineering. It is co-sponsored by the Intel Foundation and the...
Discussion Session 3 (Lectures 5 and 6)
09 Sep 2010 | Online Presentations | Contributor(s): Supriyo Datta
14 Aug 2006 | Online Presentations | Contributor(s): Margarita Shalaev
DNA is a relatively inexpensive and ubiquitous material that can be used as a scaffold for constructing nanowires. Our research focuses on the manufacturing of DNA-templated, magnetic nanowires....